Abstract: An acoustic wave device is disclosed. The acoustic waved device can be a shear horizontal mode surface acoustic wave device. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The piezoelectric layer can be a lithium niobate layer with a cut angle in a range of ?20° YX to 25° YX. The interdigital transducer electrode includes a first layer having a first thickness and a second layer having a second thickness. The first layer affects acoustic properties of the acoustic wave device and the second layer affects electrical properties of the acoustic wave device. The first layer is positioned between the piezoelectric layer and the second layer. The first thickness is configured such that a frequency response of the acoustic wave device includes a Rayleigh mode response at a frequency higher than a shear horizontal mode response resonance.

Abstract: An acoustic wave device is disclosed. The acoustic waved device can be a shear horizontal mode surface acoustic wave device. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The piezoelectric layer can be a lithium niobate layer with a cut angle in a range of ?20° YX to 25° YX. The interdigital transducer electrode including a first layer and a second layer. The first layer affects acoustic properties of the acoustic wave device and the second layer affects electrical properties of the acoustic wave device. The second layer is positioned between the piezoelectric layer and the first layer such that a frequency response of the acoustic wave device includes a Rayleigh mode response at a frequency higher than a shear horizontal mode response.

Abstract: A low velocity surface acoustic wave device, and a method of reducing the velocity of a surface acoustic wave generated by a surface acoustic wave device are described, the device including a piezoelectric layer, an interdigital transducer disposed on the piezoelectric substrate and configured to generate a surface acoustic wave in response to an electrical, and a temperature coefficient of frequency compensation layer disposed partially on the interdigital transducer and partially on the piezoelectric substrate, the temperature coefficient of frequency compensation layer having a low velocity layer disposed within it configured to reduce the velocity of a surface acoustic wave generated by the interdigital transducer, the method including disposing a wave velocity adjustment layer, the wave velocity adjustment layer being a low velocity layer, within a temperature compensation layer of the surface acoustic wave device.

Abstract: A conveyance system 50A of a film-forming apparatus 20A includes a blowing roller 6 having a function of supplying a cooling gas toward a substrate 21. The blowing roller has the first shell 11 and the internal block 12. The first shell 11 has a plurality of first through holes 13 as a gas supply channel, and is rotatable in synchronization with the substrate 21. The internal block 12 is disposed inside the first shell 11. A manifold 14 is defined by the internal block 12 inside the first shell 11. The manifold 14 is formed so as to introduce the gas toward the plurality of first through holes 13 within the range of a holding angle. A clearance 15 facing the plurality of first through holes 13 outside the range of the holding angle is further formed inside the first shell 11. In the radial direction, the manifold 14 has a relatively large dimension, and the clearance 15 has a relatively small dimension.

Abstract: A substrate-conveying roller 6A is configured to convey a substrate under vacuum, and includes a first shell 11, an internal block 12, and a shaft 10. The first shell 11 has a cylindrical outer circumferential surface for supporting the substrate, and can rotate in synchronization with the substrate. The internal block 12 is disposed inside the first shell 11, and is blocked from rotating in synchronization with the substrate. The shaft 10 extends through, and supports the internal block 12. A clearance 15 is formed between the inner circumferential surface of the first shell 11 and the internal block 12. A gas is introduced into the clearance 15 from the internal block 12 toward the inner circumferential surface of the first shell 11.

Abstract: A conveyance system 50A of a film-forming apparatus 20A includes a blowing roller 6 having a function of supplying a cooling gas toward a substrate 21. The blowing roller has the first shell 11 and the internal block 12. The first shell 11 has a plurality of first through holes 13 as a gas supply channel, and is rotatable in synchronization with the substrate 21. The internal block 12 is disposed inside the first shell 11. A manifold 14 is defined by the internal block 12 inside the first shell 11. The manifold 14 is formed so as to introduce the gas toward the plurality of first through holes 13 within the range of a holding angle. A clearance 15 facing the plurality of first through holes 13 outside the range of the holding angle is further formed inside the first shell 11. In the radial direction, the manifold 14 has a relatively large dimension, and the clearance 15 has a relatively small dimension.

Abstract: A lithium ion secondary having a high capacity in which decrease in the cycle characteristics is suppressed is provided by reducing cracks formed by repetition of charge and discharge.

Abstract: A semiconductor device according to the present invention is a semiconductor device having a first wiring formed in a first insulating layer and a second wiring formed in a second insulating layer formed on the first insulating layer and the first wiring. Here, at least one of the first wiring and the second wiring is a CuAl wiring. The second wiring is electrically connected to the first wiring at its via-plug portion, with a plurality of barrier layers interposed between the second wiring and the first wiring. In the barrier layers, a CuAl-contact barrier layer which is in contact with the CuAl wiring has a nitrogen atom content of less than 10 atomic %. Therefore, the present semiconductor device has high reliability and small variations in initial via resistance value.