Patents by Inventor Noriaki Fujitani
Noriaki Fujitani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230317527Abstract: A method for detecting impurities on a surface of a silicon wafer for manufacturing semiconductors, the impurities not being able to be detected by a conventional inspection method, a method for manufacturing the silicon wafer for manufacturing semiconductors having the impurities removed from the surface thereof, and a method for screening wafers for manufacturing semiconductors. This method for detecting impurities on a surface of a wafer for manufacturing semiconductors includes: a step for coating the surface of the wafer with a film-forming composition, and performing baking to form a film; and then a step for detecting impurities by means of a wafer inspection tool.Type: ApplicationFiled: September 6, 2021Publication date: October 5, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Tomoya OHASHI, Suguru SASSA, Noriaki FUJITANI
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Patent number: 10242871Abstract: There is provided a composition that a resist pattern having a reduced LWR representing variations in line width of the resist pattern, compared to conventional resist patterns, can be formed. A resist underlayer film-forming composition for lithography comprising a polymer, 0.1 to 30 parts by mass of a compound having an amino group protected with a tert-butoxycarbonyl group and an unprotected carboxyl group, or a hydrate of the compound, relative to 100 parts by mass of the polymer, and a solvent.Type: GrantFiled: October 16, 2015Date of Patent: March 26, 2019Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Tokio Nishita, Noriaki Fujitani, Rikimaru Sakamoto
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Patent number: 10133178Abstract: There is provided a new coating liquid for resist pattern coating.Type: GrantFiled: September 18, 2015Date of Patent: November 20, 2018Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Tokio Nishita, Shuhei Shigaki, Noriaki Fujitani, Takafumi Endo, Rikimaru Sakamoto
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Patent number: 10042258Abstract: This composition for forming an extreme-ultraviolet (EUV) or electron-beam upper-layer resist film including (a) a polymer (P) and (b) a solvent, the solvent containing 1 to 13 mass % of a C4-12 ketone compound with respect to the entire solvent, is used in the lithography process of a procedure for manufacturing a semiconductor device. Without needing to be intermixed with a resist, and particularly on the occasion of EUV exposure, the composition for forming an EUV or electron-beam upper-layer resist film blocks undesirable exposure light, e.g., ultraviolet (UV) or deep ultraviolet (DUV) rays, and selectively transmits only the EUV rays, and can be developed using a developing solution after exposure.Type: GrantFiled: July 23, 2015Date of Patent: August 7, 2018Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Noriaki Fujitani, Takafumi Endo, Rikimaru Sakamoto
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Patent number: 9977331Abstract: A resist overlayer film forming composition for use in a lithography process in semiconductor device production does not intermix with a resist, blocks undesirable exposure light particularly in EUV exposure, for example, UV and DUV and selectively transmits EUV alone, and can be developed with a developer after exposure.Type: GrantFiled: February 13, 2015Date of Patent: May 22, 2018Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Noriaki Fujitani, Rikimaru Sakamoto
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Patent number: 9927705Abstract: An additive for a resist underlayer film-forming composition that modifies a surface state of a resist underlayer film into a hydrophobic state to enhance adhesion between the resist underlayer film and a resist pattern formed on the resist underlayer film, and a resist underlayer film-forming composition containing the additive. An additive for a resist underlayer film-forming composition including a polymer having a structural unit of Formula (1): (wherein R1 is a hydrogen atom or methyl group, L is a single bond or a divalent linking group, and X is an aliphatic hydrocarbon group, an alicyclic hydrocarbon group, or a heterocyclic group having an oxygen atom as a heteroatom that does not have a hydroxy group). A resist underlayer film-forming composition for lithography including a resin binder, an organic solvent, and the additive.Type: GrantFiled: July 16, 2014Date of Patent: March 27, 2018Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Noriaki Fujitani, Takafumi Endo, Ryuji Ohnishi, Rikimaru Sakamoto
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Patent number: 9910354Abstract: A composition for forming a resist underlayer film which make possible to form a desired high-adhesion resist pattern. A resist underlayer film-forming composition for lithography containing a polymer having the following structure Formula (1) or (2) at a terminal of a polymer chain, crosslinker, compound promoting crosslinking reaction, and organic solvent. (wherein R1 is a C1-6 alkyl group optionally having a substituent, phenyl group, pyridyl group, halogeno group, or hydroxy group, R2 is a hydrogen atom, a C1-6 alkyl group, hydroxy group, halogeno group, or ester group of —C(?O)O—X wherein X is a C1-6 alkyl group optionally having a substituent, R3 is a hydrogen atom, a C1-6 alkyl group, hydroxy group, or halogeno group, R4 is a direct bond or divalent C1-8 organic group, R5 is a divalent C1-8 organic group, A is an aromatic ring or heteroaromatic ring, t is 0 or 1, and u is 1 or 2.Type: GrantFiled: April 14, 2015Date of Patent: March 6, 2018Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Yasushi Sakaida, Tokio Nishita, Noriaki Fujitani, Rikimaru Sakamoto
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Publication number: 20170293227Abstract: There is provided a new coating liquid for resist pattern coating.Type: ApplicationFiled: September 18, 2015Publication date: October 12, 2017Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Tokio NISHITA, Shuhei SHIGAKI, Noriaki FUJITANI, Takafumi ENDO, Rikimaru SAKAMOTO
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Publication number: 20170250079Abstract: There is provided a composition that a resist pattern having a reduced LWR representing variations in line width of the resist pattern, compared to conventional resist patterns, can be formed. A resist underlayer film-forming composition for lithography comprising a polymer, 0.1 to 30 parts by mass of a compound having an amino group protected with a tert-butoxycarbonyl group and an unprotected carboxyl group, or a hydrate of the compound, relative to 100 parts by mass of the polymer, and a solvent.Type: ApplicationFiled: October 16, 2015Publication date: August 31, 2017Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Tokio NISHITA, Noriaki FUJITANI, Rikimaru SAKAMOTO
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Patent number: 9746768Abstract: There is provided a resist overlayer film forming composition for use in a lithography process in semiconductor device production, which does not intermix with a resist, blocks undesirable exposure light particularly in EUV exposure, for example, UV and DUV and selectively transmits EUV alone, and which can be developed with a developer after exposure. A resist overlayer film forming composition comprising: a polymer including an organic group including a linear or branched saturated alkyl group having a carbon atom number of 1 to 10, in which some or all of hydrogen atoms thereof are substituted with fluorine atoms, and an optionally substituted C8-16 ether compound as a solvent.Type: GrantFiled: January 24, 2014Date of Patent: August 29, 2017Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Ryuji Ohnishi, Rikimaru Sakamoto, Noriaki Fujitani
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Publication number: 20170205711Abstract: This composition for forming an extreme-ultraviolet (EUV) or electron-beam upper-layer resist film including (a) a polymer (P) and (b) a solvent, the solvent containing 1 to 13 mass % of a C4-12 ketone compound with respect to the entire solvent, is used in the lithography process of a procedure for manufacturing a semiconductor device. Without needing to be intermixed with a resist, and particularly on the occasion of EUV exposure, the composition for forming an EUV or electron-beam upper-layer resist film blocks undesirable exposure light, e.g., ultraviolet (UV) or deep ultraviolet (DUV) rays, and selectively transmits only the EUV rays, and can be developed using a developing solution after exposure.Type: ApplicationFiled: July 23, 2015Publication date: July 20, 2017Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Noriaki FUJITANI, Takafumi ENDO, Rikimaru SAKAMOTO
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Publication number: 20170045820Abstract: A composition for forming a resist underlayer film which make possible to form a desired high-adhesion resist pattern. A resist underlayer film-forming composition for lithography containing a polymer having the following structure Formula (1) or (2) at a terminal of a polymer chain, crosslinker, compound promoting crosslinking reaction, and organic solvent. (wherein R1 is a C1-6 alkyl group optionally having a substituent, phenyl group, pyridyl group, halogeno group, or hydroxy group, R2 is a hydrogen atom, a C1-6 alkyl group, hydroxy group, halogeno group, or ester group of —C(?O)O—X wherein X is a C1-6 alkyl group optionally having a substituent, R3 is a hydrogen atom, a C1-6 alkyl group, hydroxy group, or halogeno group, R4 is a direct bond or divalent C1-8 organic group, R5 is a divalent C1-8 organic group, A is an aromatic ring or heteroaromatic ring, t is 0 or 1, and u is 1 or 2.Type: ApplicationFiled: April 14, 2015Publication date: February 16, 2017Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Yasushi SAKAIDA, Tokio NISHITA, Noriaki FUJITANI, Rikimaru SAKAMOTO
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Publication number: 20170010535Abstract: A resist overlayer film forming composition for use in a lithography process in semiconductor device production does not intermix with a resist, blocks undesirable exposure light particularly in EUV exposure, for example, UV and DUV and selectively transmits EUV alone, and can be developed with a developer after exposure.Type: ApplicationFiled: February 13, 2015Publication date: January 12, 2017Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Noriaki FUJITANI, Rikimaru SAKAMOTO
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Patent number: 9448480Abstract: The present invention provides a novel resist underlayer film formation composition for lithography. A resist underlayer film formation composition for lithography comprising: a polymer having a structure of Formula (1) at a terminal of a polymer chain; a cross-linking agent; a compound promoting a cross-linking reaction; and an organic solvent; (where R1, R2, and R3 are each independently a hydrogen atom, a linear or branched C1-13 alkyl group, a halogeno group, or a hydroxy group; at least one of R1, R2, and R3 is the alkyl group; Ar is a benzene ring, a naphthalene ring, or an anthracene ring; two carbonyl groups are bonded to respective two adjacent carbon atoms of Ar; and X is a linear or branched C1-6 alkyl group optionally having a C1-3 alkoxy group as a substituent).Type: GrantFiled: September 22, 2014Date of Patent: September 20, 2016Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Tokio Nishita, Ryuji Ohnishi, Noriaki Fujitani, Rikimaru Sakamoto
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Patent number: 9436085Abstract: A composition for forming a resist underlayer film to be used in a lithography process, that includes: a polymer containing unit structures of Formula (1), Formula (2), and Formula (3): the polymer being a polymer in which the unit structure of Formula (1) has a ratio of mole number (a) within a range of 0.20?a?0.90, the unit structure of Formula (2) has a ratio of mole number (b) within a range of 0.05?b?0.60, and the unit structure of Formula (3) has a ratio of mole number (c) within a range of 0.001?c?0.40, when a total mole number of all unit structures constituting the polymer is 1.0, and the polymer having a weight average molecular weight of 3,000 to 100,000; a crosslinkable compound; a photoacid generator; and a solvent.Type: GrantFiled: December 6, 2010Date of Patent: September 6, 2016Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Yusuke Horiguchi, Makiko Umezaki, Noriaki Fujitani, Hirokazu Nishimaki, Takahiro Kishioka, Takahiro Hamada
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Publication number: 20160238936Abstract: A novel resist underlayer film formation composition for lithography includes: a polymer having a structure of Formula (1) at a terminal of a polymer chain; a cross-linking agent; a compound promoting a cross-linking reaction; and an organic solvent: (where R1, R2, and R3 are each independently a hydrogen atom, a linear or branched C1-13 alkyl group, a halogeno group, or a hydroxy group; at least one of R1, R2, and R3 is the alkyl group; Ar is a benzene ring, a naphthalene ring, or an anthracene ring; two carbonyl groups are bonded to respective two adjacent carbon atoms of Ar; and X is a linear or branched C1-6 alkyl group optionally having a C1-3 alkoxy group as a substituent).Type: ApplicationFiled: September 22, 2014Publication date: August 18, 2016Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Tokio NISHITA, Ryuji OHNISHI, Noriaki FUJITANI, Rikimaru SAKAMOTO
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Publication number: 20160147152Abstract: An additive for a resist underlayer film-forming composition that modifies a surface state of a resist underlayer film into a hydrophobic state to enhance adhesion between the resist underlayer film and a resist pattern formed on the resist underlayer film, and a resist underlayer film-forming composition containing the additive. An additive for a resist underlayer film-forming composition including a polymer having a structural unit of Formula (1): (wherein R1 is a hydrogen atom or methyl group, L is a single bond or a divalent linking group, and X is an aliphatic hydrocarbon group, an alicyclic hydrocarbon group, or a heterocyclic group having an oxygen atom as a heteroatom that does not have a hydroxy group). A resist underlayer film-forming composition for lithography including a resin binder, an organic solvent, and the additive.Type: ApplicationFiled: July 16, 2014Publication date: May 26, 2016Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Noriaki FUJITANI, Takafumi ENDO, Ryuji OHNISHI, Rikimaru SAKAMOTO
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Patent number: 9250525Abstract: A composition forms a resist underlayer film showing improved adhesiveness to a resist pattern. A resist underlayer film-forming composition for lithography, including: a polymer that has a structure of Formula (1a), Formula (1b), or Formula (2) below on an end of the polymer; and an organic solvent: where R1 is a hydrogen atom or a methyl group; each of R2 and R3 is independently a hydrogen atom or an organic group such as a hydrocarbon group, etc., the hydrocarbon group optionally has at least one of a hydroxy group and a methylthio group as substituent(s); R4 is a hydrogen atom or a hydroxy group; Q1 is an arylene group; v is 0 or 1; y is an integer of 1 to 4; w is an integer of 1 to 4; x1 is 0 or 1; and x2 is an integer of 1 to 5.Type: GrantFiled: August 25, 2015Date of Patent: February 2, 2016Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Takafumi Endo, Rikimaru Sakamoto, Noriaki Fujitani
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Patent number: 9240327Abstract: There is provided a resist underlayer film composition for EUV lithography that is used in a device production process using EUV lithography, reduces adverse effects of EUV, and is effective for obtaining a good resist pattern, and to a method for forming a resist pattern that uses the resist underlayer film composition for EUV lithography. A resist underlayer film-forming composition for EUV lithography, including: a polymer having a repeating unit structure of formula (1): [where each of A1, A2, A3, A4, A5, and A6 is a hydrogen atom, a methyl group, or an ethyl group; X1 is formula (2), formula (3), formula (4), or formula (0): Q is formula (5) or formula (6): and a solvent. A resist underlayer film-forming composition for EUV lithography, comprising: the polymer having the repeating unit structure of formula (1); a crosslinkable compound; and a solvent.Type: GrantFiled: July 31, 2012Date of Patent: January 19, 2016Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Rikimaru Sakamoto, Noriaki Fujitani, Takafumi Endo, Ryuji Ohnishi, Bangching Ho
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Publication number: 20150362835Abstract: There is provided a resist overlayer film forming composition for use in a lithography process in semiconductor device production, which does not intermix with a resist, blocks undesirable exposure light particularly in EUV exposure, for example, UV and DUV and selectively transmits EUV alone, and which can be developed with a developer after exposure. A resist overlayer film forming composition including: a polymer including an organic group including a linear or branched saturated alkyl group having a carbon atom number of 1 to 10, in which some or all of hydrogen atoms thereof are substituted with fluorine atoms, and an optionally substituted C8-16 ether compound as a solvent.Type: ApplicationFiled: January 24, 2014Publication date: December 17, 2015Inventors: Ryuji OHNISHI, Rikimaru SAKAMOTO, Noriaki FUJITANI