Abstract: The relative movement urging device urges the relative movement of the first member and the second member which are connected in a relatively movable manner. The relative movement urging device includes a first connecting member connected to the first member, a second connecting member which is movable in the departing direction with respect to the first connecting member and is connected to the second member, and a guide member to which the first connecting member and the second connecting member are slidably connected with urging in the mutually departing direction. The guide member includes a first guide section which guides the slide of the first connecting member and a second guide section which is in parallel with the side of the first guide section to guide the slide of the second connecting member.

Abstract: An elastic member used for a slide device includes a plurality of spring wires and first and second connecting sections that are locked to one ends and the other ends of the spring wires, respectively. Locking ends are formed at one ends and the other ends of the spring wires, both ends of the spring wires including the locking ends are formed in a symmetrical shape, the connecting sections include retaining engagement portions that make the plurality of spring wires be engaged with the connecting sections, and the first and second connecting sections are separately formed by forming the same assembling members and the same superposed members. If the assembling members are fixed to the superposed members while the ends of the spring wires are fitted to the grooves of the retaining engagement portions and the superposed members are assembled to be superposed on the assembling members, the ends of the plurality of spring wires are disposed at predetermined intervals and retained by the connecting sections.

Abstract: The invention provides a slide device where a slide part 2 of a second member B is slidably engaged between slide guide portions 1 of a first member A. The slide device includes protrusions 5 that have a height where slidable engagement may not be achieved, and the protrusions 5 are crushed so as to have a predetermined height, so that the slide part may be slidably engaged between the slide guide portions. Further, the invention provides a slide device. The slide device includes guide rail portions 23 that are provided at a first member 21 or a second member 22, slide portions 25 that are provided at the second member 22 or the first member 21 and relatively move along the guide rail portions 23, and a biasing body 27 which is disposed between the first and second members 21 and 22 and of which one end is connected to the first member 21 and the other end is connected to the second member 22 so as to make the second member 22 move relative to the first member 21 in a slide direction.

Abstract: Reading of memory configured with PLED transistors is sped up. In a direction orthogonal to source power lines GND of MISFET Tr1, shunt lines SL grounded at both ends thereof and electrically connected with the source power lines GND are inserted to expel noise (potential) developing in the source power lines GND to ground potential. By expelling noise (potential) developing in the source power lines GND to ground potential, a decrease in a source-to-drain voltage of MISFET Tr1 is suppressed.

Abstract: There is disclosed a method of slicing a semiconductor ingot in which the ingot is pressed against a moving wire. A thinner portion of the wire is used at the beginning of slicing to cut a portion of the ingot where the cutting length is shorter than a predetermined length, and a thicker portion of the wire is used when the cutting length becomes longer than the predetermined length. Subsequently, a thinner portion of the wire is used when the slicing approaches to the end and the cutting length becomes shorter than a predetermined length. A portion of the wire used in previous slicing is used as the thinner portion. Alternatively, the thinner portion is formed through use of a die. The slicing method makes it possible to cut the ingot into a plurality of wafers having a uniform thickness.

Abstract: A semiconductor integrated circuit is provided in which a differential amplifier circuit such as a sense amplifier is operated at high speed even if the operating voltage is reduced. To achieve this, a MOS transistor for supplying the operating voltage to a drive line on the high-potential side of a differential amplifier circuit is of N-channel type and the amplitude of a switching control signal for controlling this transistor is the potential of the step-up voltage produced by stepping up a supply voltage in level. The output voltage of an internal step-up circuit for achieving a word-line selection level is utilizable as the step-up voltage.