Abstract: The present invention relates to a laminate including two or more layers of a composite layer including a fiber substrate and a cured product of a thermosetting resin composition, the two or more layers of the composite layer including one or more layer of a composite layer (X) and one or more layer of a composite layer (Y), the composite layer (X) being a layer including a first fiber substrate constituted by first glass fibers, the composite layer (Y) being a layer including a second fiber substrate constituted by second glass fibers, and the second glass fibers having a higher tensile elastic modulus at 25° C. than the first glass fibers, a printed wiring board including the laminate, a semiconductor package, and a method for producing a laminate.

Abstract: An electronic appliance, includes: an imaging apparatus; a display apparatus; and a control apparatus, the control apparatus being configured to: extract, from a moving image captured by the imaging apparatus, subjects included in the moving image and information items each on one of the subjects; generate enlarged-view target information for selecting an enlarged-view target from among the subjects, with reference to the information items; select the enlarged-view target from among the subjects, with reference to the enlarged-view target information; and enlarge a region including the enlarged-view target, and cause the display apparatus to display the moving image.

Abstract: The present invention relates to a laminate including two or more layers of a composite layer including a fiber substrate and a cured product of a thermosetting resin composition, the two or more layers of the composite layer including one or more layer of a composite layer (X) and one or more layer of a composite layer (Y), the composite layer (X) being a layer including a first fiber substrate constituted by first glass fibers, the composite layer (Y) being a layer including a second fiber substrate constituted by second glass fibers, and the second glass fibers having a higher tensile elastic modulus at 25° C. than the first glass fibers, a printed wiring board including the laminate, a semiconductor package, and a method for producing a laminate.

Abstract: An aspect of the present disclosure more effectively provides notification of information. A control section (10) includes: a person detecting section (13) configured to detect a person in a case where it has been detected that a target event has occurred; an output control section (14) configured to control a speaker (50) to output audio indicating the target event in a case where the target event has occurred; and a command preparing section (15) configured to (i) transmit a rotation instruction to a charging station (2) in a case where detection of a person is to be commenced and (ii) transmit a subtle rotation instruction in a case where the person has been detected.

Abstract: An electronic apparatus includes: a display device; a storage; and a controller, wherein the controller is configured to perform processes of extracting, from a moving picture acquired from the storage, subjects included in the moving picture and information about each of the subjects, selecting a target of magnification display from among the subjects by referring to the information, and controlling the display device to display the moving picture with a region including the target being magnified.

Abstract: An electronic appliance, includes: an imaging apparatus; a display apparatus; and a control apparatus, the control apparatus being configured to: extract, from a moving image captured by the imaging apparatus, subjects included in the moving image and information items each on one of the subjects; generate enlarged-view target information for selecting an enlarged-view target from among the subjects, with reference to the information items; select the enlarged-view target from among the subjects, with reference to the enlarged-view target information; and enlarge a region including the enlarged-view target, and cause the display apparatus to display the moving image.

Abstract: To provide a semiconductor device including an electrode having a low contact resistance with the back surface of a GaN substrate and being suitably bonded with solder, and having a low electric resistance of the current flowing in a vertical direction. The semiconductor device has a GaN substrate, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a body electrode, a drain electrode, a source electrode, and a gate electrode. The drain electrode has a Ti layer, an Al layer, a Ti layer, a TiN layer, a Ti layer, a Ni layer, and an Ag layer sequentially from the second surface of the GaN substrate.

Abstract: To provide a semiconductor device including an electrode having a low contact resistance with the back surface of a GaN substrate and being suitably bonded with solder, and having a low electric resistance of the current flowing in a vertical direction. The semiconductor device has a GaN substrate, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a body electrode, a drain electrode, a source electrode, and a gate electrode. The drain electrode has a Ti layer, an Al layer, a Ti layer, a TiN layer, a Ti layer, a Ni layer, and an Ag layer sequentially from the second surface of the GaN substrate.

Abstract: An aspect of the present disclosure more effectively provides notification of information. A control section (10) includes: a person detecting section (13) configured to detect a person in a case where it has been detected that a target event has occurred; an output control section (14) configured to control a speaker (50) to output audio indicating the target event in a case where the target event has occurred; and a command preparing section (15) configured to (i) transmit a rotation instruction to a charging station (2) in a case where detection of a person is to be commenced and (ii) transmit a subtle rotation instruction in a case where the person has been detected.

Abstract: A semiconductor device includes a substrate, a semiconductor layer that is formed on the substrate and includes a pn junction or a hetero-junction, an insulating film that is formed on the semiconductor layer to be in contact with an end of the pn junction or an end of the hetero-junction, and an electrode formed on the semiconductor layer. The insulating film includes an insulating layer that is mainly made of negatively charged microcrystal.

Abstract: A semiconductor device includes a substrate, a semiconductor layer that is formed on the substrate and includes a pn junction or a hetero-junction, an insulating film that is formed on the semiconductor layer to be in contact with an end of the pn junction or an end of the hetero-junction, and an electrode formed on the semiconductor layer. The insulating film includes an insulating layer that is mainly made of negatively charged microcrystal.

Abstract: A technique of reducing the contact resistance between a semiconductor substrate and a metal layer is provided. A manufacturing method of a semiconductor device comprises a process of forming a metal layer on an N surface of a nitride semiconductor substrate. The process of forming the metal layer includes a first process of forming a metal layer by sputtering at a film formation rate controlled to 4 nm/minute or lower.

Abstract: A technique of suppressing leak current in a semiconductor device is provided. A semiconductor device, comprises: a semiconductor layer made of a semiconductor; an insulating layer configured to have electric insulation property and formed to cover part of the semiconductor layer; a first electrode layer formed on the semiconductor layer, configured to have a work function of not less than 0.5 eV relative to electron affinity of the semiconductor layer and extended to surface of the insulating layer to form a field plate structure; and a second electrode layer configured to have electrical conductivity and formed to cover at least part of the first electrode layer. A distance between an edge of a part of the first electrode layer that is in contact with the semiconductor layer and the second electrode layer is equal to or greater than 0.2 ?m.

Abstract: A semiconductor device comprises: a semiconductor layer; and an insulating film that is formed on the semiconductor layer. The insulating film includes an insulating layer that is mainly made of negatively charged microcrystal.

Abstract: An object is to use an electrode made of a less expensive material than gold (Au). A semiconductor device comprises: a first titanium layer that is formed to cover at least part of a semiconductor layer and is made of titanium; an aluminum layer that is formed on the first titanium layer on opposite side of the semiconductor layer and mainly consists of aluminum; a titanium nitride layer that is formed on the aluminum layer on opposite side of the first titanium layer and is made of titanium nitride; and an electrode layer that is formed on the titanium nitride layer on opposite side of the aluminum layer and is made of copper.

Abstract: A semiconductor device, comprises: a semiconductor layer, a first gate insulating film, a second gate insulating film and a gate electrode. The semiconductor layer is mainly made of gallium nitride (GaN). The first gate insulating film is formed on the semiconductor layer by atomic layer deposition using ozone as an oxidizing agent and is mainly made of an oxide. The second gate insulating film is formed on the first gate insulating film by atomic layer deposition using oxygen plasma as an oxidizing agent, and is mainly made of an oxide and contains carbon (C) at a lower concentration than that in the first gate insulating film. The gate electrode is formed on the second gate insulating film.

Abstract: An object is to use an electrode made of a less expensive material than gold (Au). A semiconductor device comprises: a first titanium layer that is formed to cover at least part of a semiconductor layer and is made of titanium; an aluminum layer that is formed on the first titanium layer on opposite side of the semiconductor layer and mainly consists of aluminum; a titanium nitride layer that is formed on the aluminum layer on opposite side of the first titanium layer and is made of titanium nitride; and an electrode layer that is formed on the titanium nitride layer on opposite side of the aluminum layer and is made of silver.

Abstract: A semiconductor device comprises: a semiconductor layer; and an insulating film that is formed on the semiconductor layer. The insulating film includes an insulating layer that is mainly made of negatively charged microcrystal.

Abstract: A semiconductor device, comprises: a semiconductor layer, a first gate insulating film, a second gate insulating film and a gate electrode. The semiconductor layer is mainly made of gallium nitride (GaN). The first gate insulating film is formed on the semiconductor layer by atomic layer deposition using ozone as an oxidizing agent and is mainly made of an oxide. The second gate insulating film is formed on the first gate insulating film by atomic layer deposition using oxygen plasma as an oxidizing agent, and is mainly made of an oxide and contains carbon (C) at a lower concentration than that in the first gate insulating film. The gate electrode is formed on the second gate insulating film.

Abstract: A technique of suppressing leak current in a semiconductor device is provided. A semiconductor device, comprises: a semiconductor layer made of a semiconductor; an insulating layer configured to have electric insulation property and formed to cover part of the semiconductor layer; a first electrode layer formed on the semiconductor layer, configured to have a work function of not less than 0.5 eV relative to electron affinity of the semiconductor layer and extended to surface of the insulating layer to form a field plate structure; and a second electrode layer configured to have electrical conductivity and formed to cover at least part of the first electrode layer. A distance between an edge of a part of the first electrode layer that is in contact with the semiconductor layer and the second electrode layer is equal to or greater than 0.2 ?m.