Abstract: A charged particle beam drawing apparatus calculates a pattern area density distribution by using a central processing unit, calculates a dose distribution by using the central processing unit, calculates an irradiation amount distribution by using the central processing unit, performs a convolution calculation of the irradiation amount distribution and a fogging charged particle distribution by using a high speed processing unit, a processing speed of the high speed processing unit being higher than a processing speed of the central processing unit, calculates an irradiation time by using the central processing unit, calculates an elapsed time by using the central processing unit, calculates an electrical charging amount distribution by using the central processing unit, and performs a convolution calculation of the electrical charging amount distribution and a position deviation response function by using the high speed processing unit.

Abstract: A charged particle beam writing apparatus includes a charge amount distribution calculation unit configured to calculate a charge amount distribution which is charged by irradiation of a charged particle beam onto a writing region of a target workpiece, by using a charge decay amount and a charge decay time constant both of which depend on a pattern area density, a position displacement amount distribution calculation unit configured to calculate a position displacement amount of each writing position due to charge amounts of the charge amount distribution by performing convolution of each charge amount of the charge amount distribution with a response function, and a writing unit configured to write a pattern on the each writing position where the position displacement amount has been corrected, using a charged particle beam.

Abstract: A charged particle beam writing apparatus includes a unit calculating a total charge amount of charged particle beams irradiating each minimum deflection region in deflection regions having different deflection sizes respectively deflected by deflectors of a plurality of levels for deflecting charged particle beams, a unit calculating a representative temperature of the each minimum deflection region based on heat transfer from other minimum deflection regions having been written before the each minimum deflection region is written, a unit inputting a first dose of a shot of each charged particle beam irradiating the each minimum deflection region, and modulating the first dose by using the representative temperature of the each minimum deflection region, and a unit including the deflectors of a plurality of levels and writing a pattern in the each minimum deflection region with a second dose, which has been modulated, by using the deflectors of a plurality of levels.

Abstract: A pattern density distribution and a dose distribution calculated using the pattern density distribution are multiplied by each other to calculate an exposure distribution. A fogging electron amount distribution is calculated using the exposure distribution and a function descriptive of a fogging spread distribution. Charge amount distributions in irradiation and non-irradiation regions are calculated using the exposure distribution and the fogging electron amount distribution. A position displacement amount distribution is calculated using the charge amount distributions and a response function for converting a charge amount to a position displacement error.

Abstract: A charged particle beam pattern forming apparatus, includes a charge amount distribution calculation unit configured to calculate a charge amount distribution charged by vertical incidence of a charged particle beam on a pattern forming region of a target object; a position correction unit configured to calculate, using the charge amount distribution charged, a corrected position of each pattern forming position corrected for a misregistration amount including a misregistration amount dependent on a deflection position where the charged particle beam is deflected, the misregistration amount caused by an amount of charge; and a pattern generator configured to form a pattern in the corrected position by using the charged particle beam.

Abstract: A charged particle beam drawing apparatus calculates a pattern area density distribution by using a central processing unit, calculates a dose distribution by using the central processing unit, calculates an irradiation amount distribution by using the central processing unit, performs a convolution calculation of the irradiation amount distribution and a fogging charged particle distribution by using a high speed processing unit, a processing speed of the high speed processing unit being higher than a processing speed of the central processing unit, calculates an irradiation time by using the central processing unit, calculates an elapsed time by using the central processing unit, calculates an electrical charging amount distribution by using the central processing unit, and performs a convolution calculation of the electrical charging amount distribution and a position deviation response function by using the high speed processing unit.

Abstract: A charged particle beam writing apparatus includes a charge amount distribution calculation unit configured to calculate a charge amount distribution which is charged by irradiation of a charged particle beam onto a writing region of a target workpiece, by using a charge decay amount and a charge decay time constant both of which depend on a pattern area density, a position displacement amount distribution calculation unit configured to calculate a position displacement amount of each writing position due to charge amounts of the charge amount distribution by performing convolution of each charge amount of the charge amount distribution with a response function, and a writing unit configured to write a pattern on the each writing position where the position displacement amount has been corrected, using a charged particle beam.

Abstract: A charged-particle beam lithography apparatus includes a charged-particle beam irradiation unit, a deflector which deflects the charged particle beam, a stage which disposes thereon a workpiece for pattern writing and a plurality of marks being regularly laid out in an entire area substantially equal to a pattern writing region of the workpiece, a measurement unit for measuring positions of the marks on the stage through scanning of the charged-particle beam by the deflector, a coefficient calculation unit which uses an approximation equation for correction of a position deviation occurring due to a hardware configuration of the apparatus to perform the fitting of a position deviation amount of each mark by a coordinate system of the apparatus to thereby calculate more than one coefficient of the fitting-applied approximation equation, and a storage unit which performs overwrite-storing whenever the coefficient calculation unit calculates the coefficient.

Abstract: A pattern density distribution and a dose distribution calculated using the pattern density distribution are multiplied by each other to calculate an exposure distribution. A fogging electron amount distribution is calculated using the exposure distribution and a function descriptive of a fogging spread distribution. Charge amount distributions in irradiation and non-irradiation regions are calculated using the exposure distribution and the fogging electron amount distribution. A position displacement amount distribution is calculated using the charge amount distributions and a response function for converting a charge amount to a position displacement error.

Abstract: A charged-particle beam lithography apparatus includes a charged-particle beam irradiation unit, a deflector which deflects the charged particle beam, a stage which disposes thereon a workpiece for pattern writing and a plurality of marks being regularly laid out in an entire area substantially equal to a pattern writing region of the workpiece, a measurement unit for measuring positions of the marks on the stage through scanning of the charged-particle beam by the deflector, a coefficient calculation unit which uses an approximation equation for correction of a position deviation occurring due to a hardware configuration of the apparatus to perform the fitting of a position deviation amount of each mark by a coordinate system of the apparatus to thereby calculate more than one coefficient of the fitting-applied approximation equation, and a storage unit which performs overwrite-storing whenever the coefficient calculation unit calculates the coefficient.

Abstract: A pattern forming apparatus includes a drawing chamber having a drawing substrate on which an original pattern is drawn, a first temperature control unit having a first temperature regulator to make the temperature of the drawing chamber constant, and a constant-temperature member arranged near the drawing substrate. The pattern forming apparatus further includes a second temperature control unit having a second temperature regulator. The second temperature control unit is configured to control the set temperature of the constant-temperature member independently such that the temperature of the drawing substrate becomes substantially constant when the original pattern is drawn.

Abstract: A pattern forming apparatus includes a drawing chamber having a drawing substrate on which an original pattern is drawn, a first temperature control unit having a first temperature regulator to make the temperature of the drawing chamber constant, and a constant-temperature member arranged near the drawing substrate. The pattern forming apparatus further includes a second temperature control unit having a second temperature regulator. The second temperature control unit is configured to control the set temperature of the constant-temperature member independently such that the temperature of the drawing substrate becomes substantially constant when the original pattern is drawn.

Abstract: A pattern forming apparatus includes a drawing chamber having a drawing substrate on which an original pattern is drawn, a first temperature control unit having a first temperature regulator to make the temperature of the drawing chamber constant, and a constant-temperature member arranged near the drawing substrate. The pattern forming apparatus further includes a second temperature control unit having a second temperature regulator. The second temperature control unit is configured to control the set temperature of the constant-temperature member independently such that the temperature of the drawing substrate becomes substantially constant when the original pattern is drawn.

Abstract: A pattern writing method acquires the area of a pattern segment located in each of a plurality of small regions obtained by dividing a region on which a pattern is to be written, small region by small region, and writes a pattern based on an optimum dose calculated based on this area. This method employs a scheme of shifting pattern segments and averaging the accumulated area, so that even when the pitch of repetitive patterns slightly differs from the side length of each small region in the pitch direction, a peculiar error does not occur, thereby ensuring highly-precise proximity effect correction and contributing to improving the precision of writing an LSI pattern.