Abstract: A radiation transmission type target to be used for a radiation tube has a target metal 12 placed on a substrate 13, and has an antistatic member 14 placed on a surface of the substrate 13 opposite to a surface on which the target metal 12 is placed. The target suppresses its electrostatic charge, and enables the radiation tube to stable operate.

Abstract: A radiation detection apparatus comprising semiconductor substrates each having a first surface on which a photoelectric conversion portion is formed and a second surface opposite to the first surface; a scintillator layer, placed over the first surfaces of the semiconductor substrates, for converting radiation into light; and an elastic member, placed between a base and the second surfaces, for supporting the second surfaces of the semiconductor substrates such that the first surfaces of the semiconductor substrates are flush with each other is provided. In measurement of the elastic member as a single body, an amount of stretch of a cubic specimen in a direction parallel to the first surface when being compressed in a direction perpendicular to the first surface is smaller than an amount of stretch of the specimen in the direction perpendicular to the first surface when being compressed in the direction parallel to the first surface.

Abstract: A radiation detection panel including a photoelectric conversion element that detects fluorescence by a phosphor layer, the radiation detection panel comprising: a base material for supporting the phosphor layer, including the photoelectric conversion element; and a protective film for covering the phosphor layer, wherein the phosphor layer is formed on a surface and at least one lateral face of the base material, and an angle between the surface and the at least one lateral face is less than 90 degrees.

Abstract: A radiation transmission type target to be used for a radiation tube has a target metal 12 placed on a substrate 13, and has an antistatic member 14 placed on a surface of the substrate 13 opposite to a surface on which the target metal 12 is placed. The target suppresses its electrostatic charge, and enables the radiation tube to stable operate.

Abstract: A radiation detection apparatus comprising semiconductor substrates each having a first surface on which a photoelectric conversion portion is formed and a second surface opposite to the first surface; a scintillator layer, placed over the first surfaces of the semiconductor substrates, for converting radiation into light; and an elastic member, placed between a base and the second surfaces, for supporting the second surfaces of the semiconductor substrates such that the first surfaces of the semiconductor substrates are flush with each other is provided. In measurement of the elastic member as a single body, an amount of stretch of a cubic specimen in a direction parallel to the first surface when being compressed in a direction perpendicular to the first surface is smaller than an amount of stretch of the specimen in the direction perpendicular to the first surface when being compressed in the direction parallel to the first surface.

Abstract: An electron-emitting device of the present invention has an electron-emitting film, and the electron-emitting film is composed of a first layer made of a first material, and a plurality of particles made of a second material whose electric resistivity is lower than that of the first material and provided into the first layer. The first material contains oxygen and nitrogen. A method for manufacturing the electron-emitting device according to the present invention has a step of forming the electron-emitting film, and the electron-emitting film forming step includes a step of forming the plurality of particles made of a second material whose electric resistivity is lower than that of a first material into the first layer made of the first material containing oxygen and nitrogen.

Abstract: An antistatic film installed in an airtight vessel containing an electron source of an electron-generating device such as a picture display unit has a structure comprising an image of conductor or semiconductor particles with particle diameters of 0.5 to 10 nm dispersed in a medium containing a nitride, an oxide or both; and thereby improves controllability for a resistivity value, stability and reproducibility, and the adequate temperature characteristics of resistance.

Abstract: There is provided an electron source according to the present invention, having a plurality of electron-emitting devices wherein each of the electron-emitting devices has a pair of electrodes, and a plurality of conductive films having respective electron emitting portions, provided between the pair of electrodes so as to be electrically connected to the pair of electrodes, the electron source including: a short-circuit suppressing film which is positioned between the plurality of conductive films and is provided on the electron-emitting device so as to be electrically connected to the pair of electrodes, and mainly contains tungsten (W) and germanium (Ge) nitride, wherein a ratio of the number of tungsten atoms to the number of tungsten and germanium atoms is 0.24 or more in the short-circuit suppressing film, surface resistivity of the short-circuit suppressing film is not less than 1×1010 ?/square and not more than 1×1013 ?/square.

Abstract: A spacer for an image display apparatus includes a base material and a film configuration in which a first film having a structure that silver particles are dispersed in aluminum oxynitride and a second film containing tungsten, germanium and nitrogen are layered on the base material in this order.

Abstract: The present invention provides a conductive member that can be produced at low costs and has excellent resistance temperature characteristics, a spacer made of the conductive member, and an image display apparatus using the spacer. More specifically, the conductive member according to the present invention is a conductive member comprising a base material and conductive particles whose conductivity is larger than that of the base material dispersed in the base material, and the conductive particles are dispersed in the base material in such a way that activation energy of the conductive member is 0.3 eV or less and volume resistivity of the conductive member is 105 ?cm or more.

Abstract: There is provided an electron source according to the present invention, having a plurality of electron-emitting devices wherein each of the electron-emitting devices has a pair of electrodes, and a plurality of conductive films having respective electron emitting portions, provided between the pair of electrodes so as to be electrically connected to the pair of electrodes, the electron source including: a short-circuit suppressing film which is positioned between the plurality of conductive films and is provided on the electron-emitting device so as to be electrically connected to the pair of electrodes, and mainly contains tungsten (W) and germanium (Ge) nitride, wherein a ratio of the number of tungsten atoms to the number of tungsten and germanium atoms is 0.24 or more in the short-circuit suppressing film, surface resistivity of the short-circuit suppressing film is not less than 1×1010 ?/square and not more than 1×1013 ?/square.

Abstract: An electron-emitting device of the present invention has an electron-emitting film, and the electron-emitting film is composed of a first layer made of a first material, and a plurality of particles made of a second material whose electric resistivity is lower than that of the first material and provided into the first layer. The first material contains oxygen and nitrogen. A method for manufacturing the electron-emitting device according to the present invention has a step of forming the electron-emitting film, and the electron-emitting film forming step includes a step of forming the plurality of particles made of a second material whose electric resistivity is lower than that of a first material into the first layer made of the first material containing oxygen and nitrogen.

Abstract: There is provided a spacer for an image display apparatus having a base material and a film configuration in which a first film having a structure that silver particles are dispersed in aluminum oxynitride and a second film containing tungsten, germanium and nitrogen are layered on the base material in this order.

Abstract: An antistatic film installed in an airtight vessel containing an electron source of an electron-generating device such as a picture display unit has a structure comprising a plurality of conductor particles with particle diameters of 0.5 to 10 nm dispersed in a medium containing a nitride; and thereby improves controllability for a resistivity value, stability and reproducibility, and the adequate temperature characteristics of resistance.