Abstract: A plurality of through-hole conductors include a first through-hole conductor and a second through-hole conductor between coil conductors adjacent each other. Each of the first through-hole conductor and the second through-hole conductor includes a first end and a second end. The first end included in the second through-hole conductor is coupled to the second end included in the first through-hole conductor, and has a width larger than a width of the second end included in the first through-hole conductor. The first end included in the first through-hole conductor has a width larger than the width of the second end included in the first through-hole conductor. The second end included in the second through-hole conductor has a width smaller than the width of the first end included in the second through-hole conductor.

Abstract: An etching method for etching a silicon-containing layer into a pattern of a mask is provided. The mask is formed by etching, from a block copolymer layer that includes a first polymer and a second polymer, that is layered on the silicon-containing layer of an object to be processed via an intermediate layer, and that is enabled to be self-assembled, a second region including the second polymer and the intermediate layer right under the second region. The etching method includes generating plasma by supplying a process gas including carbon C, sulfur S, and fluorine F to the inside of a processing chamber of a plasma processing apparatus in which the object to be processed is provided; and forming a protective film on the mask and etching the silicon-containing layer according to the generated plasma.

Abstract: An etching method for etching a silicon-containing layer into a pattern of a mask is provided. The mask is formed by etching, from a block copolymer layer that includes a first polymer and a second polymer, that is layered on the silicon-containing layer of an object to be processed via an intermediate layer, and that is enabled to be self-assembled, a second region including the second polymer and the intermediate layer right under the second region. The etching method includes generating plasma by supplying a process gas including carbon C, sulfur S, and fluorine F to the inside of a processing chamber of a plasma processing apparatus in which the object to be processed is provided; and forming a protective film on the mask and etching the silicon-containing layer according to the generated plasma.