Abstract: In a photomask in which a device pattern, an alignment mark and a superimposition inspection mark are formed on a light transmitting base, each of the alignment mark and the superimposition inspection mark includes a main mark portion, and first and second auxiliary pattern portions. The main mark portion is constituted of one of a space pattern and a line pattern, the pattern having a linear width to be resolved on a photosensitive film formed on a semiconductor wafer, and each of the first and second auxiliary pattern portions includes an auxiliary pattern constituted of one of a repeated pattern of a space pattern and a repeated pattern of a line pattern, the repeated pattern having a linear width not to be resolved on the photosensitive film. The pitch of the repeated pattern is equal to the minimum pitch of the device pattern.

Abstract: A character pattern extracting method includes ranking character patterns whose number is larger than a maximum number of character patterns in an aperture, depending on the number of reference times in design data of a semiconductor device, extracting first extraction patterns whose number is smaller than the maximum number from the large number of read character patterns in a descending order of the reference time number, defining character patterns except the first extraction patterns out of the larger number of character patterns as candidate patterns, selecting from the candidate patterns a plurality of candidate patterns whose number corresponds to a difference between the number of extracted patterns from the maximum number, and creating combinations of the selected candidate patterns, and extracting second extraction patterns included in a combination among the combinations of candidate patterns, in which a manufacturing time of the semiconductor device is most shortened.

Abstract: According to an aspect of the invention, there is provided an electron beam lithography apparatus including a first setting unit configured to set a drawing position on a semiconductor substrate based on layout information of the semiconductor substrate, a second setting unit configured to set a valid range on the semiconductor substrate based on shape information of the semiconductor substrate, a determination unit configured to determine whether or not the drawing position falls within the valid range, and an irradiation unit configured to irradiate the semiconductor substrate with an electron beam when the determination unit determines that the drawing position falls within the valid range.

Abstract: An optical disc signal processing apparatus is provided which comprises a rotation control section for measuring and outputting the number of edges within a predetermined time for a binary signal obtained from an RF signal reproduced from an optical disc on which information is recorded, a detecting section for detecting a missing portion of the RF signal, and a parameter control section for, when a missing portion of the RF signal is not detected, calculating and outputting a rotation control parameter for controlling a rotation of the optical disc based on the number of edges obtained by the rotation control section, and when a missing portion of the RF signal is detected, controlling the rotation control parameter so that an influence of the missing portion of the RF signal is suppressed.

Abstract: The invention relates to a control unit of an electric power conversion apparatus that can decrease the high-order harmonic content generated by resonance of the inductance component of the primary wiring connecting an AC power supply 20 and the electric power conversion apparatus and a capacitor connected as a filter even if distortion occurs in an input current waveform.

Abstract: The invention relates to a control unit of an electric power conversion apparatus that can decrease the high-order harmonic content generated by resonance of the inductance component of the primary wiring connecting an AC-power supply 20 and the electric power conversion apparatus and a capacitor connected as a filter even if distortion occurs in an input current waveform.

Abstract: According to an aspect of the invention, there is provided an electron beam drawing apparatus comprising at least one stage of a deflection amplifier and a deflection unit, a first storage section which stores shot information at a drawing time, a second storage section which stores a correction table indicating a relation between the shot information and an output voltage of the deflection amplifier, and an adjusting section which adjusts an output of the deflection amplifier based on the correction table stored in the second storage section and the shot information stored in the first storage section.

Abstract: An exposure method using an energy beam exposure apparatus capable of controlling magnitude relation between blurs of energy beam in first and second directions for exposing a pattern on a sample in the apparatus in a state in which the blur of energy beam in one direction of the first and second directions is set smaller than the blur of energy beam in the other direction comprises adjusting the magnitude relation of the blurs of energy beam in the first and second directions, adjusting the direction of the sample in the apparatus on the basis of the pattern and the magnitude relation of the blurs of energy beam in the first and second directions, and projecting the pattern onto the sample by exposing the sample to the energy beam and using shape correction of the pattern needed to compensate blurs of energy beam in the first and second directions.

Abstract: An exposure method using an energy beam exposure apparatus capable of controlling magnitude relation between blurs of energy beam in first and second directions for exposing a pattern on a sample in the apparatus in a state in which the blur of energy beam in one direction of the first and second directions is set smaller than the blur of energy beam in the other direction comprises adjusting the magnitude relation of the blurs of energy beam in the first and second directions, adjusting the direction of the sample in the apparatus on the basis of the pattern and the magnitude relation of the blurs of energy beam in the first and second directions, and projecting the pattern onto the sample by exposing the sample to the energy beam and using shape correction of the pattern needed to compensate blurs of energy beam in the first and second directions.

Abstract: A nickel-base alloy for a glass-contacting member used in an unenergized state and having a composition comprising by weight 25 to 40% of chromium, 10 to 45% of cobalt, optionally 0.1 to 3.0% of titanium and optionally 0.01 to 0.05% of at least one element selected from among rare earth metals with the balance consisting of nickel and unavoidable impurities.

Abstract: An improved process of vitrifying a radioactive liquid waste by absorbing a radioactive liquid waste into a glass frit cartridge made of molded glass fibers and heat-melting the cartridge to vitrify the liquid waste. The invention is characterized by absorbing a radioactive liquid waste containing ruthenium into the glass frit cartridge together with a reducing agent. By the process of the invention, the formation of gaseous ruthenium is effectively suppressed during the heat-melting.

Abstract: A method for treating synthetic pulp particles, which includes treating a slurry of synthetic pulp particles having a Schopper-Riegler freeness of more than 30.degree.SR by a concentration provided with a rotary filter bed to lower the freeness not more than 30.degree.SR, water-washing the synthetic pulp particles in the state where the freeness is not more than 30.degree.SR, and dispersing the synthetic pulp particles in water to restore the freeness to more than 30.degree.SR.

Abstract: An electric melting furnace for glassifying high-radioactive waste characterized in that, in a furnace for melting glass containing platinum-group elements which has an outlet of glass at the bottom part of a melting tank, the bottom of the furnace surrounding the outlet has an inclination of more than 30.degree. and not more than 70.degree. with respect to the horizontal plane toward the cullet, and the distance l.sub.1 between a surface-inside opening part of the outlet and bottom ends of at least a pair of electrodes (3a, 3b) for supplying most of power required for glass melting is a half or more, but not exceeding, of the distance (l.sub.2) between the electrodes (3a, 3b).

Abstract: A cake of synthetic fibrid, which is formed by pressing to hydroextract a slurry of synthetic fibrid, pulverizing the compression product, and compressing the pulverization product again to solidity it in the form of a plate-like cake.

Abstract: A freeze valve for a molten glass discharging nozzle is disposed at the bottom of a glass melting furnace. The freeze valve has at least two sets of temperature control units provided around the nozzle and arranged in series in the longitudinal direction of the nozzle, and an ejector for ejecting a high-pressure gas disposed at the lower end of the nozzle and adapted to eject the high-pressure gas toward the axis of the nozzle. Each of the temperature control units includes heating and cooling means so as to heat and cool independently both the upper and lower portions of the nozzle.

Abstract: A method of ascertaining the state inside a melting furnace of a radioactive waste, which method comprises: blowing a gas into a molten matter in the melting furnace by using at least two slender tubes disposed at an upper and lower points with a gap .DELTA.h between said points; detecting a back pressure difference .DELTA.P at the slender tubes to determine the density .rho. of the molten matter; and determining the level h of the molten matter in the furnace using the density .rho.. It is also possible to detect the formation of a bridge inside the furnace due to a non-molten solid matter of the waste charged into the furnace.

Abstract: An aromatic copolyamide comprising recurring units (A) of the formula (I), (B) of the formula (II) and (C) of the formula (III): ##STR1## wherein in (I), (II) and (III), Ar.sub.1 is phenylene, naphthylene or biphenylene radicals, each having two valence bonds oriented meta; Ar.sub.2 is phenylene, naphthylene or biphenylene radicals, each having two valence bonds oriented coaxially or in parallel to each other and radicals of the formula (IV): ##STR2## wherein Y.sub.1 and Y.sub.2 are independently ##STR3## and; X.sub.1, X.sub.2, X.sub.3, X.sub.4, X.sub.5 and X.sub.6 respectively are independently --NH-- and --CO-- radicals, connected to each other to form an amide bond (--NHCO-- or --CHNH--), and the molar proportions of said recurring units (A), (B), and (C) fall within a quadrilateral defined by the co-ordinates P, Q, R and S or on a twice-turned line defined by the co-ordinates Q, R, S and P:P (A 50, B 5, C 45)Q (A 5, B 5, C 90)R (A 5, B 40, C 55) andS (A 50, B 15, C 35)on a triangular composition diagram.

Abstract: An aromatic copolyamide comprising recurring units (A) of the formula (I), (B) of the formula (II) and (C) of the formula (III): ##STR1## wherein in (I), (II) and (III) Ar.sub.1 is phenylene, naphthylene or biphenylene radicals, each having two valence bonds oriented meta; Ar.sub.2 is phenylene, naphthylene or biphenylene radicals, each having two valence bonds oriented coaxially or in parallel to each other and radicals of the formula (IV): ##STR2## wherein Y.sub.1 and Y.sub.2 are independently; ##STR3## and; X.sub.1, X.sub.2, X.sub.3, X.sub.4, X.sub.5 and X.sub.6 respectively are independently --NH-- and --CO-- radicals, connected to each other to form an amide bond (--NHCO-- or --CHNH--), and the molar proportions of said recurring units (A), (B) and (C) fall within a quadrilateral defined by the co-ordinates P, Q, R and S or on a twice-turned line defined by the co-ordinates Q,R,S, and P:P (A 50, B 5, C 45)Q (A 5, B 5, C 90)R (A 5, B 40, C 55) andS (A 50, B 15, C 35)on a triangular composition diagram.

Abstract: A semipermeable composite membrane comprising a thin semipermeable film of a polymeric material deposited on one side of a microporous substrate, the polymeric material being prepared by crosslinking a soluble polymer containing at least 30 mole % of a recurring unit of the formula ##STR1## wherein all symbols are as defined herein, and having at least 0.5 milliequivalent, per gram of said polymer, of an amino group containing 1 or 2 active hydrogen atoms, with a polyfunctional compound containing at least two functional groups capable of reacting with the amino group having 1 or 2 active hydrogen atoms; and a process for preparing the same. The semipermeable composite membrane of this invention is especially useful for desalination of saline or brackish water by reverse osmosis.

Abstract: A semipermeable composite membrane comprising a thin semipermeable film of a polymeric material deposited on one side of a microporous substrate, said polymeric material being prepared by crosslinking a soluble polymer containing at least 30 mole % of a recurring unit of the formula ##STR1## wherein all symbols are as defined in claim 1, and having at least 0.2 milliequivalent, per gram of said polymer, of an amino group containing 1 or 2 active hydrogen atoms, with a polyfunctional compound containing at least two functional groups capable of reacting with the amino group having 1 or 2 active hydrogen atoms; and a process for preparing the same. The semipermeable composite membrane of this invention is especially useful for desalination of saline or brackish water by reverse osmosis.