Abstract: Electric power is accumulated in another form without using a storage battery so as to more effectively utilize electric power generated by solar power generation. A cold heat source storage system includes a freezer operated by directly utilizing the output power of a solar power generation device, a cold heat source storage chamber cooled by the freezer, a number of water tanks installed in the cold heat source storage chamber, and a heat exchange device installed in the cold heat source storage chamber. The system can be included in heat source storage system, which includes a heater operated by directly utilizing the output power of the solar power generation device, a heat source storage tank which stores water heated by the heater, and a heat exchange device installed in the hot heat source storage tank.

Abstract: Electric power is accumulated in another form without using a storage battery so as to more effectively utilize electric power generated by solar power generation. A cold heat source storage system includes a freezer operated by directly utilizing the output power of a solar power generation device, a cold heat source storage chamber cooled by the freezer, a number of water tanks installed in the cold heat source storage chamber, and a heat exchange device installed in the cold heat source storage chamber. The system can be included in heat source storage system, which includes a heater operated by directly utilizing the output power of the solar power generation device, a heat source storage tank which stores water heated by the heater, and a heat exchange device installed in the hot heat source storage tank.

Abstract: A method for manufacturing a semiconductor device according to the present invention includes a manufacturing step of forming a plurality of unit regions each having a plurality of first regions serving as effective cells in which main current flows, and a second region that has an appearance different from that of the first regions and serves as an ineffective cell in which no main current flows, and an appearance inspection step including a step of imaging the unit region to obtain a captured image, a step of cutting out an inspection image from the captured image based on a position of an alignment pattern containing the second region, and a step of comparing the inspection image with a reference image.

Abstract: A method for manufacturing a semiconductor device according to the present invention includes a manufacturing step of forming a plurality of unit regions each having a plurality of first regions serving as effective cells in which main current flows, and a second region that has an appearance different from that of the first regions and serves as an ineffective cell in which no main current flows, and an appearance inspection step including a step of imaging the unit region to obtain a captured image, a step of cutting out an inspection image from the captured image based on a position of an alignment pattern containing the second region, and a step of comparing the inspection image with a reference image.

Abstract: A method of manufacturing an SiC semiconductor device according to the present invention includes the steps of (a) by using a single mask, etching regions of an SiC semiconductor layer which serve as an impurities implantation region and a mark region, to form recesses, (b) by using the same mask as in the step (a), performing ion-implantation in the recesses of the regions which serve as the impurities implantation region and the mark region, at least from an oblique direction relative to a surface of the SiC semiconductor layer and (c) positioning another mask based on the recess of the region which serves as the impurities implantation region or the mark region, and performing well implantation in a region containing the impurities implantation region.

Abstract: A defect inspection method according to the present invention is a defect inspection method for inspecting a defect of a semiconductor wafer, including the steps of: (a) forming a mark on a semiconductor wafer that is an inspection object, the mark corresponding to the size of a device chip that will be obtained from the semiconductor wafer, the mark being formed with respect to a predetermined device chip on the semiconductor wafer; and (b) during a predetermined process included in a semiconductor wafer process or before the semiconductor wafer process, performing a defect inspection on the semiconductor wafer and recognizing defect information based on the mark as a reference.

Abstract: A defect inspection method according to the present invention is a defect inspection method for inspecting a defect of a semiconductor wafer, including the steps of: (a) forming a mark on a semiconductor wafer that is an inspection object, the mark corresponding to the size of a device chip that will be obtained from the semiconductor wafer, the mark being formed with respect to a predetermined device chip on the semiconductor wafer; and (b) during a predetermined process included in a semiconductor wafer process or before the semiconductor wafer process, performing a defect inspection on the semiconductor wafer and recognizing defect information based on the mark as a reference.

Abstract: A method of manufacturing an SiC semiconductor device according to the present invention includes the steps of (a) by using a single mask, etching regions of an SiC semiconductor layer which serve as an impurities implantation region and a mark region, to form recesses, (b) by using the same mask as in the step (a), performing ion-implantation in the recesses of the regions which serve as the impurities implantation region and the mark region, at least from an oblique direction relative to a surface of the SiC semiconductor layer and (c) positioning another mask based on the recess of the region which serves as the impurities implantation region or the mark region, and performing well implantation in a region containing the impurities implantation region.

Abstract: A method of manufacturing an SiC semiconductor device according to the present invention includes the steps of (a) by using a single mask, etching regions of an SiC semiconductor layer which serve as an impurities implantation region and a mark region, to form recesses, (b) by using the same mask as in the step (a), performing ion-implantation in the recesses of the regions which serve as the impurities implantation region and the mark region, at least from an oblique direction relative to a surface of the SiC semiconductor layer and (c) positioning another mask based on the recess of the region which serves as the impurities implantation region or the mark region, and performing well implantation in a region containing the impurities implantation region.

Abstract: Marking of an SiC wafer with an identifier is realized by irradiation with a pulsed laser using a harmonic of a wavelength four times that of a YAG laser. A speed at which a laser head moves, an orbit in which the laser head moves, the output power and Q-switch frequency of a pulsed laser to be applied, and the like are determined such that pulse-irradiated marks formed as a result of irradiation with corresponding pulses of the pulsed laser do not overlap each other.

Abstract: A method of manufacturing an SiC semiconductor device according to the present invention includes the steps of (a) by using a single mask, etching regions of an SiC semiconductor layer which serve as an impurities implantation region and a mark region, to form recesses, (b) by using the same mask as in the step (a), performing ion-implantation in the recesses of the regions which serve as the impurities implantation region and the mark region, at least from an oblique direction relative to a surface of the SiC semiconductor layer and (c) positioning another mask based on the recess of the region which serves as the impurities implantation region or the mark region, and performing well implantation in a region containing the impurities implantation region.

Abstract: A dehumidification cooling apparatus for an indoor sports facility is provided which is capable of realizing dehumidification and cooling at a low operating cost in the indoor sports facility. This apparatus includes: an ice chamber for turning water into ice and storing it; an air supply-and-exhaust pipe which is disposed from the ice chamber to the indoor sports facility, leads to the ice chamber and leads to the upper space of the indoor sports facility; a fan which is disposed in a supply pipe of the air supply-and-exhaust pipe; and a heater which is disposed in the supply pipe of the air supply-and-exhaust pipe.

Abstract: A dehumidification cooling apparatus for an indoor sports facility is provided which is capable of realizing dehumidification and cooling at a low operating cost in the indoor sports facility. This apparatus includes: an ice chamber for turning water into ice and storing it; an air supply-and-exhaust pipe which is disposed from the ice chamber to the indoor sports facility, leads to the ice chamber and leads to the upper space of the indoor sports facility; a fan which is disposed in a supply pipe of the air supply-and-exhaust pipe; and a heater which is disposed in the supply pipe of the air supply-and-exhaust pipe.

Abstract: The printer includes a CPU, a bridge image processing unit, a RAM, a ROM, a supply power control unit, a printing unit, a communication I/F, and physical layer I/Fs. When the Ethernet is connected to the communication I/F, if the DMA transfer request signal is not outputted from the DMAC for more than a specific time, the supply power control unit shifts into the sleep mode that halts the supplies of clock to the CPU, etc.; and if data is received from the host computer group, the supply power control unit releases the sleep mode. Further, in case that equipment conforming to the USB standard or the IEEE 1284 is connected to the communication I/F, if the DMA transfer request signal is not outputted from the DMAC for more than the specific time, the supply power control unit shifts into the power halt mode that halts the supply of power to the CPU, etc. Thus, the invention provides a printer capable of effectively reducing the power consumption.

Abstract: A CPU executes decomposing processing based on data by a PDL received through a communication interface, and generates data by an intermediate language for each band. Here, the CPU judges whether or not the values of the image data are all zero as the image data in the band. As to the image data whose values become all zero, rendering processing from the intermediate language to the image data and compression processing of the image data by a JBIG compressor are omitted, and only a termination code is stored as coded data in a main memory. Thereby, the processing speed can be increased. A JBIG decompressor decompresses the coded data to generate output image data, which is outputted to a printing unit. Thus, the image processing device of the invention increases the speed of generating coded data, and enhances the total throughput.

Abstract: The printer includes a CPU, a bridge image processing unit, a RAM, a ROM, a supply power control unit, a printing unit, a communication I/F, and physical layer I/Fs. When the Ethernet is connected to the communication I/F, if the DMA transfer request signal is not outputted from the DMAC for more than a specific time, the supply power control unit shifts into the sleep mode that halts the supplies of clock to the CPU, etc.; and if data is received from the host computer group, the supply power control unit releases the sleep mode. Further, in case that equipment conforming to the USB standard or the IEEE 1284 is connected to the communication I/F, if the DMA transfer request signal is not outputted from the DMAC for more than the specific time, the supply power control unit shifts into the power halt mode that halts the supply of power to the CPU, etc. Thus, the invention provides a printer capable of effectively reducing the power consumption.

Abstract: The printer includes a CPU, a bridge image processing unit, a RAM, a ROM, a supply power control unit, a printing unit, a communication I/F, and physical layer I/Fs. When the Ethernet is connected to the communication I/F, if the DMA transfer request signal is not outputted from the DMAC for more than a specific time, the supply power control unit shifts into the sleep mode that halts the supplies of clock to the CPU, etc.; and if data is received from the host computer group, the supply power control unit releases the sleep mode. Further, in case that equipment conforming to the USB standard or the IEEE 1284 is connected to the communication I/F, if the DMA transfer request signal is not outputted from the DMAC for more than the specific time, the supply power control unit shifts into the power halt mode that halts the supply of power to the CPU, etc. Thus, the invention provides a printer capable of effectively reducing the power consumption.

Abstract: A CPU executes decomposing processing based on data by a PDL received through a communication interface, and generates data by an intermediate language for each band. Here, the CPU judges whether or not the values of the image data are all zero as the image data in the band. As to the image data whose values become all zero, rendering processing from the intermediate language to the image data and compression processing of the image data by a JBIG compressor are omitted, and only a termination code is stored as coded data in a main memory. Thereby, the processing speed can be increased. A JBIG decompressor decompresses the coded data to generate output image data, which is outputted to a printing unit. Thus, the image processing device of the invention increases the speed of generating coded data, and enhances the total throughput.

Abstract: A reduction/enlargement processing system for an image processing apparatus of the type in which a line sensor is moved in a secondary scan direction while an image on an original is read by the line sensor in a main scan direction, comprising, line buffers for retaining image data for two lines, an interpolation processing circuit for applying a 2-point interpolation to the image data when the image data is written into or read out of the buffers, and a control circuit for controlling the writing data to and read data from the buffers and the interpolation circuit. Further, selectors are provided on the data input side and the data output side, and on the buffer side. The interpolation circuit is connected between the selectors. The line buffers are alternately selected for the read/write of image data. With use of the selectors, the 2-point interpolation may be applied to the image data or the image data may be directly processed.

Abstract: A digital filter capable of obtaining a filter output by adding the products of image data in a filter operation area with a set of desired filter constants, selecting a predetermined portion among the calculated bits with an output bit selection circuit, and expressing the result retrieved according to the decimal point format of the filter constants. According to the digital filter described above, different types of filter operations such as a low-pass filter operation and a high-pass filter operation can be performed accurately.