Abstract: The present invention relates to a semiconductor manufacturing apparatus, and an object of the invention is to prevent breakage and deformation of semiconductor substrates without deteriorating operability in processing. In order to achieve the object, a semiconductor manufacturing apparatus has a stage (100) on which a semiconductor substrate (30) is placed, and the stage (100) has a first metal portion (10) that is made of metal and that comes in contact with the semiconductor substrate (30) placed thereon, and an electroconductive elastic-body portion (20) that is made of an electroconductive elastic body and that comes in contact with the semiconductor substrate (30) placed thereon. A contaminant (40) is embedded in the electroconductive elastic-body portion (20).

Abstract: A semiconductor manufacturing apparatus and a semiconductor manufacturing method, and has as one object to process a wafer easily and stably irrespective of thickness. To achieve the above object, a semiconductor manufacturing apparatus includes: an open-topped cassette that encases a semiconductor substrate; a plurality of processors for performing a predetermined processing of the semiconductor substrate; and a transporting mechanism that transports the cassette encasing the semiconductor substrate between the plurality of processors.

Abstract: A semiconductor device including: a semiconductor substrate; a first main electrode provided on a first main surface of said semiconductor substrate; a second main electrode provided on a second main surface of said semiconductor substrate, wherein a main current flows in a thickness direction of said semiconductor substrate; a trench that extends from the first main surface of said semiconductor substrate towards the second main surface; a gate insulating film covering an inner surface of said trench; and a gate electrode buried in said trench and surrounded by said gate insulating film.

Abstract: A semiconductor device has a semiconductor substrate having a first main surface, a second main surface opposite to the first main surface, and a recess defined in the second main surface by side surfaces and a bottom surface, a semiconductor region provided in the bottom surface of the recess of the semiconductor substrate, semiconductor regions provided in the surface of a peripheral region on the second main surface side, and insulating films provided on the side surfaces of the recess to electrically insulate the semiconductor regions.

Abstract: A semiconductor device in which a main current flows in a direction of the thickness of a semiconductor substrate, to attain desirable electric characteristics. P type semiconductor regions and N type semiconductor regions are alternately provided with an interval therebetween, both regions in a surface of a second main surface of a semiconductor substrate. Between the P type semiconductor regions and the N type semiconductor regions, trenches formed in the surface of the semiconductor substrate are filled with insulators, thereby forming trench isolation structures. Moreover, a second main electrode is formed in contact with both the P type semiconductor regions and the N type semiconductor regions.

Abstract: A semiconductor device in which a main current flows in a direction of the thickness of a semiconductor substrate, to attain desirable electric characteristics. P type semiconductor regions and N type semiconductor regions are alternately provided with an interval therebetween, both regions in a surface of a second main surface of a semiconductor substrate. Between the P type semiconductor regions and the N type semiconductor regions, trenches formed in the surface of the semiconductor substrate are filled with insulators, thereby forming trench isolation structures. Moreover, a second main electrode is formed in contact with both the P type semiconductor regions and the N type semiconductor regions.

Abstract: A semiconductor device in which a main current flows in a direction of the thickness of a semiconductor substrate, to attain desirable electric characteristics. P type semiconductor regions and N type semiconductor regions are alternately provided with an interval therebetween, both regions in a surface of a second main surface of a semiconductor substrate. Between the P type semiconductor regions and the N type semiconductor regions, trenches formed in the surface of the semiconductor substrate are filled with insulators, thereby forming trench isolation structures. Moreover, a second main electrode is formed in contact with both the P type semiconductor regions and the N type semiconductor regions.

Abstract: A semiconductor manufacturing apparatus, to prevent breakage and deformation of semiconductor substrates without deteriorating operability in processing. The semiconductor manufacturing apparatus includes a stage on which a semiconductor substrate is placed, and the stage includes a first metal portion made of metal and that comes in contact with the semiconductor substrate placed thereon, and an electroconductive elastic-body portion made of an electroconductive elastic body and that comes in contact with the semiconductor substrate placed thereon. A contaminant is embedded in the electroconductive elastic-body portion.

Abstract: The present invention relates to a semiconductor device; in particular, an object of the invention is to provide a semiconductor device in which a main current flows in a direction of thickness of the semiconductor substrate and which offers satisfactory performance and breakdown voltage and also satisfactory mechanical strength of the semiconductor substrate, and which needs no inconvenient control of the exposure system etc. during photolithography process.

Abstract: A semiconductor manufacturing apparatus and a semiconductor manufacturing method, and has as one object to process a wafer easily and stably irrespective of thickness. To achieve the above object, a semiconductor manufacturing apparatus includes: an open-topped cassette that encases a semiconductor substrate; a plurality of processors for performing a predetermined processing of the semiconductor substrate; and a transporting mechanism that transports the cassette encasing the semiconductor substrate between the plurality of processors.

Abstract: A semiconductor device includes an n-type semiconductor substrate (1) including a p-type collector layer (2) formed in a second main surface side thereof, a trench (13) is formed in a peripheral portion of the semiconductor substrate (1) so as to surround the inside and reach the collector layer (2) from a first main surface of the semiconductor substrate (1), and a p-type isolation region (14) formed by diffusion from a sidewall of the trench (13) is provided to be connected to the collector layer (2). The trench (13) is filled with a filling material (16).

Abstract: A semiconductor device in which a main current flows in a direction of the thickness of a semiconductor substrate, to attain desirable electric characteristics. P type semiconductor regions and N type semiconductor regions are alternately provided with an interval therebetween, both regions in a surface of a second main surface of a semiconductor substrate. Between the P type semiconductor regions and the N type semiconductor regions, trenches formed in the surface of the semiconductor substrate are filled with insulators, thereby forming trench isolation structures. Moreover, a second main electrode is formed in contact with both the P type semiconductor regions and the N type semiconductor regions.

Abstract: A semiconductor device in which a main current flows in a direction of thickness of a semiconductor substrate and which offers satisfactory performance and breakdown voltage and also satisfactory mechanical strength of the semiconductor substrate, and which needs no inconvenient control of the exposure system etc. during a photolithography process. The semiconductor device has a semiconductor substrate having a first main surface, a second main surface opposite to the first main surface, and a recess defined in the second main surface by side surfaces and a bottom surface. A semiconductor region is provided in the bottom surface of the recess of the semiconductor substrate, semiconductor regions are provided in the surface of a peripheral region on the second main surface side, and insulating films are provided on the side surfaces of the recess to electrically insulate the semiconductor regions.

Abstract: A semiconductor device includes an n-type semiconductor substrate (1) including a p-type collector layer (2) formed in a second main surface side thereof, a trench (13) is formed in a peripheral portion of the semiconductor substrate (1) so as to surround the inside and reach the collector layer (2) from a first main surface of the semiconductor substrate (1), and a p-type isolation region (14) formed by diffusion from a sidewall of the trench (13) is provided to be connected to the collector layer (2). The trench (13) is filled with a filling material (16).