Abstract: A head-up display apparatus 200 includes: a projection optical system 30 that projects a virtual image; an environment monitor portion 72 as an object detection part that detects an object present in a detection region and detects a distance from the projection optical system 30 to the object as a target distance; an arrangement change apparatus 462 as a projection distance change part that periodically changes a projection distance of a virtual image from the projection optical system 30; and a main control apparatus 90 and a display control portion 18 as an image addition part that adds a related-information image as a virtual image by the projection optical system 30 to the detected object at timing when the target distance substantially matches the projection distance.

Abstract: An object of the present invention is to provide a virtual image display optical system that is capable of substantially simultaneously displaying virtual images at a plurality of distances even with a simple configuration, and an image display device using the virtual image display optical system. A virtual image display optical system (30) according to the present invention is provided with: a display element (11); a projection optical system (15) that enlarges an image formed on the display element (11); a diffusing screen (16) that has a diffusing function, and is positioned on the light emission side of the projection optical system (15); and a virtual image forming optical system (17) that converts an image on the diffusing screen (16) into a virtual image, wherein the virtual image display optical system (30) is further provided with a positioning changing device (62) that changes a position of the diffusing screen (16).

Abstract: An object of the present invention is to provide a virtual image display optical system that is capable of substantially simultaneously displaying virtual images at a plurality of distances even with a simple configuration, and an image display device using the virtual image display optical system. A virtual image display optical system (30) according to the present invention is provided with: a display element (11); a projection optical system (15) that enlarges an image formed on the display element (11); a diffusing screen (16) that has a diffusing function, and is positioned on the light emission side of the projection optical system (15); and a virtual image forming optical system (17) that converts an image on the diffusing screen (16) into a virtual image, wherein the virtual image display optical system (30) is further provided with a positioning changing device (62) that changes a position of the diffusing screen (16).

Abstract: A head-up display apparatus 200 includes: a projection optical system 30 that projects a virtual image; an environment monitor portion 72 as an object detection part that detects an object present in a detection region and detects a distance from the projection optical system 30 to the object as a target distance; an arrangement change apparatus 462 as a projection distance change part that periodically changes a projection distance of a virtual image from the projection optical system 30; and a main control apparatus 90 and a display control portion 18 as an image addition part that adds a related-information image as a virtual image by the projection optical system 30 to the detected object at timing when the target distance substantially matches the projection distance.

Abstract: A light emitting device includes an n-type semiconductor layer, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a p-electrode is in electrical contact with the p-type semiconductor layer. The p-electrode includes a layer of silver. In a preferred embodiment of the present invention, the n-type semiconductor layer and the p-type semiconductor layer are constructed from group III nitride semiconducting materials. In one embodiment of the invention, the silver layer is sufficiently thin to be transparent. In other embodiments, the silver layer is thick enough to reflect most of the light incident thereon. A fixation layer may be provided. The fixation layer may be a dielectric or a conductor.

Abstract: A plasma having a certain density is generated between a test electrode and an electrode on a display substrate comprising a TFT array which is a circuit under test, and a test signal is transmitted between the electrode and the test electrode via the plasma. With this technique, a probe means and a testing apparatus enabling measurement of the electrical characteristics of the TFT array formed on the display substrate in a non-contact manner can be provided.

Abstract: A plasma having a certain density is generated between a test electrode and an electrode on a display substrate comprising a TFT array which is a circuit under test, and a test signal is transmitted between the electrode and the test electrode via the plasma. With this technique, a probe means and a testing apparatus enabling measurement of the electrical characteristics of the TFT array formed on the display substrate in a non-contact manner can be provided.

Abstract: Optical frequency conversion systems and methods are described. In one aspect, an optical frequency conversion system for generating a frequency-shifted replica of an input optical signal includes a phase modulation control signal generator and an optical phase modulator. The phase modulation control signal generator receives the input optical signal and generates a phase modulation control signal characterized by a sequence of phase shift control portions synchronized to the input optical signal. The optical phase modulator receives the input optical signal and phase shifts the input optical signal in accordance with the phase shift control portions of the phase modulation control signal to generate a frequency-converted replica of the input optical signal. An optical frequency conversion method for generating a frequency-shifted replica of an input optical signal also is described.

Abstract: A light emitting device includes an n-type semiconductor layer, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a p-electrode is in electrical contact with the p-type semiconductor layer. The p-electrode includes a layer of silver. In a preferred embodiment of the present invention, the n-type semiconductor layer and the p-type semiconductor layer are constructed from group III nitride semiconducting materials. In one embodiment of the invention, the silver layer is sufficiently thin to be transparent. In other embodiments, the silver layer is thick enough to reflect most of the light incident thereon. A fixation layer may be provided. The fixation layer may be a dielectric or a conductor.

Abstract: Apparatus and methods of measuring optical waveforms are described. In one aspect, an optical waveform measurement apparatus includes a light wave source, a mixer, a down converter, and a controller. The light wave source is operable to provide an adjustable frequency light wave with a frequency that is adjustable over a target frequency range. The mixer is operable to mix a target modulated optical signal with the adjustable frequency light wave to obtain a mixed signal. The frequency down converter is operable to down convert the mixed signal to obtain a down-converted signal. The controller is operable to extract from the down-converted signal amplitude and phase information relating to the target modulated optical signal and to cause the light wave source to incrementally adjust the frequency of the adjustable frequency light wave over the target frequency range.

Abstract: A light emitting device is constructed on a substrate. The device includes an n-type semiconductor layer in contact with the substrate, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a p-electrode is in electrical contact with the p-type semiconductor layer. The p-electrode includes a layer of silver in contact with the p-type semiconductor layer. A bonding layer is formed overlying the silver layer to make an electrical connection to the silver layer. The silver layer may be thin and transparent or thicker (greater than 20 nm) and reflective.

Abstract: A method for fabricating a light-emitting semiconductor device including a III-Nitride quantum well layer includes selecting a facet orientation of the quantum well layer to control a field strength of a piezoelectric field and/or a field strength of a spontaneous electric field in the quantum well layer, and growing the quantum well layer with the selected facet orientation. The facet orientation may be selected to reduce the magnitude of a piezoelectric field and/or the magnitude of a spontaneous electric field, for example. The facet orientation may also be selected to control or reduce the magnitude of the combined piezoelectric and spontaneous electric field strength.

Abstract: The optical domain optical signal sampling device comprises an electrical sampling pulse source and an electrically-controlled optical modulator. The electrically-controlled optical modulator comprises electro-optical material, an optical waveguide located in the electro-optical material and including a bifurcated region, and electrodes disposed along the bifurcated region. The optical waveguide is arranged to receive an optical signal-under-test. At least one of the electrodes is connected to receive electrical sampling pulses from the electrical sampling pulse source. The electrical sampling pulses generate an electric field between the electrodes that differentially changes the refractive index of the electro-optical material in the bifurcated region of the optical waveguide to sample the optical signal-under-test.

Abstract: The nitride semiconductor layer structure comprises a buffer layer and a composite layer on the buffer layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AlN. The composite layer is a layer of a single-crystal nitride semiconductor material that includes AlN. The composite layer includes a first sub-layer adjacent the buffer layer and a second sub-layer over the first sub-layer. The single-crystal nitride semiconductor material of the composite layer has a first AlN molar fraction in the first sub-layer and has a second AlN molar fraction in the second sub-layer. The second AlN molar fraction is greater than the first AlN molar fraction. The nitride semiconductor laser comprises a portion of the above-described nitride semiconductor layer structure, and additionally comprises an optical waveguide layer over the composite layer and an active layer over the optical waveguide layer.

Abstract: A method is provided for synthesizing an arbitrary waveform that approximates a specific waveform. The method includes specifying respective frequencies of component waveforms to be used to generate the arbitrary waveform, the frequencies being less than the maximum frequency needed to synthesize the specific waveform. The method further includes performing a least squares optimization of respective amplitudes and phases of the component waveforms across at least one predetermined time interval. The component waveforms having the amplitudes and phases optimized by the least squares optimization are then summed to produce the arbitrary waveform.

Abstract: A measurement apparatus for an optical signal under test includes a closed-loop optical path, an optical mixer in the closed-loop optical path and a photodetector. The optical signal under test and sampling light having a wavelength different from that of the optical signal under test are circulated in the closed-loop optical path. Sum/difference frequency light is generated every time the sampling light passes through the optical mixer. The sum/difference frequency light is detected by the photodetector, which provides a signal representative of the waveform of the optical signal under test.

Abstract: The nitride semiconductor layer structure comprises a buffer layer and a composite layer on the buffer layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AlN. The composite layer is a layer of a single-crystal nitride semiconductor material that includes AlN. The composite layer includes a first sub-layer adjacent the buffer layer and a second sub-layer over the first sub-layer. The single-crystal nitride semiconductor material of the composite layer has a first AlN molar fraction in the first sub-layer and has a second AlN molar fraction in the second sub-layer. The second AlN molar fraction is greater than the first AlN molar fraction. The nitride semiconductor laser comprises a portion of the above-described nitride semiconductor layer structure, and additionally comprises an optical waveguide layer over the composite layer and an active layer over the optical waveguide layer.

Abstract: An apparatus for converting an input optical signal to an electrical signal. The input optical signal is characterized by a modulation frequency and a modulation wavelength. The apparatus includes a photoconductive switch that is coupled to a photodetector by a common electrode. The photoconductive switch samples the output of the photodetector and is actuated by a switch light signal. The photoconductive switch and the photodetector are arranged such that the switch light signal does not interfere with the optical signal at locations proximate to the electrode and the electrode has a length that is less 0.5 mm.

Abstract: The optical domain optical signal sampling device comprises an electrical sampling pulse source and an electrically-controlled optical modulator. The electrically-controlled optical modulator comprises electro-optical material, an optical waveguide located in the electro-optical material and including a bifurcated region, and electrodes disposed along the bifurcated region. The optical waveguide is arranged to receive an optical signal-under-test. At least one of the electrodes is connected to receive electrical sampling pulses from the electrical sampling pulse source. The electrical sampling pulses generate an electric field between the electrodes that differentially changes the refractive index of the electro-optical material in the bifurcated region of the optical waveguide to sample the optical signal-under-test.

Abstract: A nitride semiconductor device that comprises a first layer, a second layer and a buffer layer sandwiched between the first layer and the second layer. The second layer is a layer of a single-crystal nitride semiconductor material including AlN and has a thickness greater than the thickness at which cracks would form if the second layer were grown directly on the first layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AlN. Incorporating the nitride semiconductor device into a semiconductor laser diode enables the laser diode to generate coherent light having a far-field pattern that exhibits a single peak.