Abstract: A radiation-sensitive resin composition includes a polymer, a photoacid generator, and an acid diffusion controller. The polymer includes a first repeating unit shown by a following formula (a-1). The acid diffusion controller includes at least one of a base shown by a following formula (C-1) and a photodegradable base, wherein each R1 represents a hydrogen atom or the like, R represents a monovalent group shown by an above formula (a?), each R19 represents a chain hydrocarbon group having 1 to 5 carbon atoms or the like, A represents a divalent chain hydrocarbon group having 1 to 30 carbon atoms or the like, and m and n are integers from 0 to 3 (m+n=1 to 3), wherein each of R2 and R3 represents a monovalent chain hydrocarbon group having 1 to 20 carbon atoms or the like.

Abstract: A polymer includes a repeating unit (a-1) shown by a following formula (a-1), a repeating unit (a-2) shown by a following formula (a-2), and a GPC weight average molecular weight of about 1000 to about 100,000, wherein R0 represents an alkyl group having 1 to 5 carbon atoms in which at least one hydrogen atom is substituted by a hydroxyl group, and R1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group, wherein R1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group, R2 represents an alkyl group having 1 to 4 carbon atoms, and R3 represents an alkyl group having 1 to 4 carbon atoms, a substituted or unsubstituted monovalent cyclic hydrocarbon group having 4 to 20 carbon atoms, or a divalent cyclic hydrocarbon group having 4 to 20 carbon atoms formed by R3 and R3 bonding to each other together with a carbon atom.

Abstract: There is provided an aqueous dispersion for chemical mechanical polishing that comprises abrasives comprising: (A) 100 parts by weight of inorganic particles comprising ceria, (B) 5 to 100 parts by weight of cationic organic polymer particles, and (C) 5 to 120 parts by weight of anionic water-soluble compound. The aqueous dispersion for chemical mechanical polishing is preferably produced by a method comprising a step of adding a second liquid comprising (C) 5 to 30 wt % of anionic water-soluble compound to a first liquid comprising (A) 0.1 to 10 wt % of inorganic particles comprising ceria and (B) 5 to 100 parts by weight of cationic organic polymer particles based on 100 parts by weight of the inorganic particles (A).

Abstract: A chemical mechanical polishing aqueous dispersion includes (A) abrasive grains having a pore volume of 0.14 ml/g or more, and (B) a dispersion medium.

Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle diameter of not less than 1.0 ?m. A chemical mechanical polishing method comprises polishing an insulating film by the use of the chemical mechanical polishing aqueous dispersion. By the use of the chemical mechanical polishing aqueous dispersion, occurrence of polishing scratches can be suppressed without lowering a removal rate.

Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives (A) containing ceria, an anionic water-soluble polymer (B) and a cationic surfactant (C), wherein the amount of the anionic water-soluble polymer (B) is in the range of 60 to 600 parts by mass based on 100 parts by mass of the abrasives (A) containing ceria, and the amount of the cationic surfactant (C) is in the range of 0.1 to 100 ppm based on the whole amount of the chemical mechanical polishing aqueous dispersion.

Abstract: A stopper for chemical mechanical planarization comprising an organosilicon polymer, in particular a polycarbosilane, is provided. The stopper used for polishing wafers with a wiring pattern in the manufacture of semiconductor devices to protect interlayer dielectric films made of a material such as SiO2, fluorine dope SiO2, or organic or inorganic SOG (Spin-on glass) from damages during the chemical mechanical planarization process.

Abstract: A stopper for chemical mechanical planarization comprising an organosilicon polymer, in particular a polycarbosilane, is provided. The stopper used for polishing wafers with a wiring pattern in the manufacture of semiconductor devices to protect interlayer dielectric films made of a material such as SiO2, fluorine dope SiO2, or organic or inorganic SOG (Spin-on glass) from damages during the chemical mechanical planarization process.

Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle diameter of not less than 1.0 ?m. A chemical mechanical polishing method comprises polishing an insulating film by the use of the chemical mechanical polishing aqueous dispersion. By the use of the chemical mechanical polishing aqueous dispersion, occurrence of polishing scratches can be suppressed without lowering a removal rate.

Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives (A) containing ceria, an anionic water-soluble polymer (B) and a cationic surfactant (C), wherein the amount of the anionic water-soluble polymer (B) is in the range of 60 to 600 parts by mass based on 100 parts by mass of the abrasives (A) containing ceria, and the amount of the cationic surfactant (C) is in the range of 0.1 to 100 ppm based on the whole amount of the chemical mechanical polishing aqueous dispersion.

Abstract: A stopper for chemical mechanical planarization comprising an organosilicon polymer, in particular a polycarbosilane, is provided. The stopper used for polishing wafers with a wiring pattern in the manufacture of semiconductor devices to protect interlayer dielectric films made of a material such as SiO2, fluorine dope SiO2, or organic or inorganic SOG (Spin-on glass) from damages during the chemical mechanical planarization process.