Patents by Inventor Norihiko Ikeda

Norihiko Ikeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
    Patent number: 7550020
    Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle diameter of not less than 1.0 ?m. A chemical mechanical polishing method comprises polishing an insulating film by the use of the chemical mechanical polishing aqueous dispersion. By the use of the chemical mechanical polishing aqueous dispersion, occurrence of polishing scratches can be suppressed without lowering a removal rate.
    Type: Grant
    Filed: July 14, 2005
    Date of Patent: June 23, 2009
    Assignee: JSR Corporation
    Inventors: Norihiko Ikeda, Kazuo Nishimoto, Masayuki Hattori, Nobuo Kawahashi
  • Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
    Patent number: 7252782
    Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives (A) containing ceria, an anionic water-soluble polymer (B) and a cationic surfactant (C), wherein the amount of the anionic water-soluble polymer (B) is in the range of 60 to 600 parts by mass based on 100 parts by mass of the abrasives (A) containing ceria, and the amount of the cationic surfactant (C) is in the range of 0.1 to 100 ppm based on the whole amount of the chemical mechanical polishing aqueous dispersion.
    Type: Grant
    Filed: January 21, 2005
    Date of Patent: August 7, 2007
    Assignee: JSR Corporation
    Inventors: Norihiko Ikeda, Kazuo Nishimoto, Masayuki Hattori, Nobuo Kawahashi
  • STOPPER FOR CHEMICAL MECHANICAL PLANARIZATION, METHOD FOR MANUFACTURING SAME, AND CHEMICAL MECHANICAL PLANARIZATION METHOD
    Publication number: 20070151951
    Abstract: A stopper for chemical mechanical planarization comprising an organosilicon polymer, in particular a polycarbosilane, is provided. The stopper used for polishing wafers with a wiring pattern in the manufacture of semiconductor devices to protect interlayer dielectric films made of a material such as SiO2, fluorine dope SiO2, or organic or inorganic SOG (Spin-on glass) from damages during the chemical mechanical planarization process.
    Type: Application
    Filed: February 28, 2007
    Publication date: July 5, 2007
    Applicant: JSR Corporation
    Inventors: Mutsuhiko Yoshioka, Eiji Hayashi, Norihiko Ikeda
  • Stopper for chemical mechanical planarization, method for manufacturing same, and chemical mechanical planarization method
    Patent number: 7189651
    Abstract: A stopper for chemical mechanical planarization comprising an organosilicon polymer, in particular a polycarbosilane, is provided. The stopper used for polishing wafers with a wiring pattern in the manufacture of semiconductor devices to protect interlayer dielectric films made of a material such as SiO2, fluorine dope SiO2, or organic or inorganic SOG (Spin-on glass) from damages during the chemical mechanical planarization process.
    Type: Grant
    Filed: December 4, 2003
    Date of Patent: March 13, 2007
    Assignee: JSR Corporation
    Inventors: Mutsuhiko Yoshioka, Eiji Hayashi, Norihiko Ikeda
  • Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
    Publication number: 20060010781
    Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle diameter of not less than 1.0 ?m. A chemical mechanical polishing method comprises polishing an insulating film by the use of the chemical mechanical polishing aqueous dispersion. By the use of the chemical mechanical polishing aqueous dispersion, occurrence of polishing scratches can be suppressed without lowering a removal rate.
    Type: Application
    Filed: July 14, 2005
    Publication date: January 19, 2006
    Applicant: JSR CORPORATION
    Inventors: Norihiko Ikeda, Kazuo Nishimoto, Masayuki Hattori, Nobuo Kawahashi
  • Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
    Publication number: 20050164510
    Abstract: A chemical mechanical polishing aqueous dispersion comprises abrasives (A) containing ceria, an anionic water-soluble polymer (B) and a cationic surfactant (C), wherein the amount of the anionic water-soluble polymer (B) is in the range of 60 to 600 parts by mass based on 100 parts by mass of the abrasives (A) containing ceria, and the amount of the cationic surfactant (C) is in the range of 0.1 to 100 ppm based on the whole amount of the chemical mechanical polishing aqueous dispersion.
    Type: Application
    Filed: January 21, 2005
    Publication date: July 28, 2005
    Applicant: JSR CORPORATION
    Inventors: Norihiko Ikeda, Kazuo Nishimoto, Masayuki Hattori, Nobuo Kawahashi
  • Stopper for chemical mechanical planarization, method for manufacturing same, and chemical mechanical planarization method
    Publication number: 20040110379
    Abstract: A stopper for chemical mechanical planarization comprising an organosilicon polymer, in particular a polycarbosilane, is provided. The stopper used for polishing wafers with a wiring pattern in the manufacture of semiconductor devices to protect interlayer dielectric films made of a material such as SiO2, fluorine dope SiO2, or organic or inorganic SOG (Spin-on glass) from damages during the chemical mechanical planarization process.
    Type: Application
    Filed: December 4, 2003
    Publication date: June 10, 2004
    Applicant: JSR Corporation
    Inventors: Mutsuhiko Yoshioka, Eiji Hayashi, Norihiko Ikeda