Abstract: The invention provides a transparent conductive film which exhibits low resistance and high transmittance, is an amorphous film, can be relatively readily patterned by etching with a weak acid, and can be relatively readily crystallized, and a method for producing the film. The transparent conductive film deposited from a sputtering target containing a sintered oxide including indium oxide, barium, and, in accordance with needs, tin, characterized in that the film contains indium oxide, barium, and, in accordance with needs, tin.

Abstract: Provided is a sputtering target for forming a transparent conductive film, which has low resistivity and excellent transparency, can be relatively easily patterned in amorphous state by weak acid etching and relatively easily crystallized. A method for manufacturing an oxide sintered body is also provided. The sputtering target is provided for forming the amorphous-state transparent conductive film. The sputtering target is provided with the oxide sintered body containing indium oxide, tin, if needed, and barium.

Abstract: The invention provides a zinc-oxide-based target, having excellent environmental durability. The target contains zinc oxide as a predominant component, and both titanium (Ti) and gallium (Ga) in amounts of 1.1 at. % or more and 4.5 at. % or more, respectively.

Abstract: The invention provides a transparent conductive film which exhibits low resistance and high transmittance, is an amorphous film, can be relatively readily patterned by etching with a weak acid, and can be relatively readily crystallized, and a method for producing the film. The transparent conductive film deposited from a sputtering target containing a sintered oxide including indium oxide, barium, and, in accordance with needs, tin, characterized in that the film contains indium oxide, barium, and, in accordance with needs, tin.

Abstract: A p-type thermoelectric material is prepared by mixing and melting at least two members selected from bismuth, tellurium, selenium, antimony, and sulfur to obtain an alloy ingot; grinding the alloy ingot to obtain powder of the allow mass; and hot pressing the powder. At least the hot pressing is carried out in the presence of any one of hexane and solvents represented by CnH2n+1OH or CnH2n+2CO (where n is 1, 2 or 3). A dopant may be used at the step of mixing.

Abstract: A method of preparing an n-type thermoelectric material includes forming an alloyed ingot by mixing and melting a dopant to be added optionally and at least two elements selected from the group consisting of bismuth, tellurium, selenium, antimony, and sulfur to obtain a material mixture, and by cooling the material mixture. The method also includes pulverizing the alloyed ingot to obtain pulverized powder; sintering the pulverized powder at normal pressure to obtain a half sintered body; and subjecting the half sintered body to hot press performed at pressure more than the normal pressure.

Abstract: The present invention provides high-quality tantalum oxide or niobium oxide powders with more stable quality. These high-quality tantalum oxide or niobium oxide powders have an extremely high lightness of color, having an L* value from 97 to 100 both inclusive in the L*a*b* color system. These powders contain a small amount of impurities and have a stable form of pentoxide. To produce the above described tantalum oxide or niobium oxide powders having an extremely high lightness of color, oxygen is sufficiently supplied to a roasted product in a roasting step and a subsequent high-temperature step which are both carried out during their production process.

Abstract: A p-type thermoelectric material is prepared by mixing and melting at least two members selected from bismuth, tellurium, selenium, antimony, and sulfur to obtain an alloy ingot, grinding the alloy ingot to obtain powder of the allow mass; and hot pressing the powder. At least the hot pressing is carried out in the presence of any one of hexane and solvents represented by CnH2n+1OH or CnH2n+2CO (where n is 1, 2 or 3). A dopant may be used at the step of mixing.