Patents by Inventor Norihiko Yamaguchi
Norihiko Yamaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8748878Abstract: The present application provides a thin film transistor and a method of manufacturing same capable of suppressing diffusion of aluminum to oxide semiconductor and selectively etching oxide semiconductor and aluminum oxide. The thin film transistor includes: a gate electrode; a channel layer whose main component is oxide semiconductor; a gate insulating film provided between the gate electrode and the channel layer; a sealing layer provided on the side opposite to the gate electrode, of the channel layer; and a pair of electrodes which are in contact with the channel layer and serve as a source and a drain. The sealing layer includes at least a first insulating film made of a first insulating material, and a second insulating film made of a second insulting material having etching selectivity to each of the oxide semiconductor and the first insulating material and provided between the first insulating film and the channel layer.Type: GrantFiled: February 22, 2010Date of Patent: June 10, 2014Assignee: Sony CorporationInventors: Norihiko Yamaguchi, Satoshi Taniguchi, Hiroko Miyashita, Yasuhiro Terai
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Patent number: 8497141Abstract: A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.Type: GrantFiled: August 8, 2011Date of Patent: July 30, 2013Assignee: Sony CorporationInventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Kayoko Kikuchi, Rintaro Koda, Norihiko Yamaguchi
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Patent number: 8385381Abstract: In a VCSEL, a first multilayer film reflector, an active layer having a light emitting central region, a second multilayer film reflector, and a transverse mode adjustment layer are layered in this order. The first multilayer film reflector has a quadrangle current injection region with an intersection of diagonal lines corresponding to the light emitting central region. The second multilayer film reflector has a light emitting window provided in a region corresponding to one diagonal line of the current injection region and a pair of grooves provided with the light emitting window in between. The transverse mode adjustment layer is provided correspondingly to the light emitting window, and reflectance of a peripheral region thereof is lower than that of a central region thereof.Type: GrantFiled: June 28, 2006Date of Patent: February 26, 2013Assignee: Sony CorporationInventors: Osamu Maeda, Masaki Shiozaki, Norihiko Yamaguchi, Yoshinori Yamauchi, Yuji Masui
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Patent number: 8080434Abstract: A nondestructive testing method for an oxide semiconductor layer includes the steps of applying excitation light to an amorphous or polycrystalline target oxide semiconductor layer to be tested and measuring an intensity of photoluminescence in a wavelength region longer than a wavelength corresponding to a bandgap energy among light emitted from the target oxide semiconductor layer; and estimating a film property of the target oxide semiconductor layer on the basis of measurement results.Type: GrantFiled: November 19, 2009Date of Patent: December 20, 2011Assignee: Sony CorporationInventors: Norihiko Yamaguchi, Satoshi Taniguchi, Masao Ikeda
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Publication number: 20110294236Abstract: A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.Type: ApplicationFiled: August 8, 2011Publication date: December 1, 2011Applicant: Sony CorporationInventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Kayoko Kikuchi, Rintaro Koda, Norihiko Yamaguchi
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Patent number: 8035187Abstract: The present invention provides a semiconductor light receiving element capable of reducing capacity while minimizing increase in travel time of carriers. The semiconductor light receiving element includes a semiconductor stacked structure including a first conductivity type layer, a light absorbing layer, and a second conductivity type layer having a light incidence plane in order. The semiconductor light receiving element has an oxidation layer including a non-oxidation region and an oxidation region in a stacking in-plane direction in the light absorbing layer or between the first conductivity type layer and the light absorbing layer.Type: GrantFiled: January 29, 2009Date of Patent: October 11, 2011Assignee: Sony CorporationInventors: Yoshinori Yamauchi, Takahiro Arakida, Rintaro Koda, Norihiko Yamaguchi, Yuji Masui, Tomoyuki Oki
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Patent number: 8022424Abstract: A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.Type: GrantFiled: June 5, 2007Date of Patent: September 20, 2011Assignee: Sony CorporationInventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Kayoko Kikuchi, Rintaro Koda, Norihiko Yamaguchi
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Patent number: 7920615Abstract: A surface-emitting laser diode capable of being manufactured easily at low cost, and capable of stabilizing the polarization direction of laser light in one direction and achieving higher output is provided. A light emission section 20 in which a lower first DBR mirror layer 12, a lower second DBR mirror layer 13, a lower spacer layer 14, an active layer 15 including a light emission region 15A, an upper spacer layer 16, a current confinement layer 17, an upper DBR mirror layer 18 and a contact layer 19 are laminated in this order is included on a substrate 10. The lower first DBR mirror layer 12 includes an oxidation section 30 nonuniformly distributed in a direction rotating around the light emission region 15A in a periphery of a region corresponding to the light emission region 15A. The oxidation section 30 includes a pair of multilayer films 31 and 32, and is formed by oxidizing a low refractive index layer 12A.Type: GrantFiled: June 4, 2007Date of Patent: April 5, 2011Assignee: Sony CorporationInventors: Osamu Maeda, Masaki Shiozaki, Norihiko Yamaguchi, Yoshinori Yamauchi
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Patent number: 7873092Abstract: The present invention provides a laser diode realizing improved light detection precision. The laser diode includes a stack structure in which a first semiconductor layer of a first conduction type, an active layer, and a second semiconductor layer of a second conduction type are included in this order; a photodetection layer; and a plurality of light absorption layers provided on the corresponding position of antinodes or nodes of standing waves of light output from the active layer.Type: GrantFiled: October 31, 2007Date of Patent: January 18, 2011Assignee: Sony CorporationInventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Norihiko Yamaguchi, Rintaro Koda, Tomoyuki Oki
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Publication number: 20100224871Abstract: The present application provides a thin film transistor and a method of manufacturing same capable of suppressing diffusion of aluminum to oxide semiconductor and selectively etching oxide semiconductor and aluminum oxide. The thin film transistor includes: a gate electrode; a channel layer whose main component is oxide semiconductor; a gate insulating film provided between the gate electrode and the channel layer; a sealing layer provided on the side opposite to the gate electrode, of the channel layer; and a pair of electrodes which are in contact with the channel layer and serve as a source and a drain. The sealing layer includes at least a first insulating film made of a first insulating material, and a second insulating film made of a second insulting material having etching selectivity to each of the oxide semiconductor and the first insulating material and provided between the first insulating film and the channel layer.Type: ApplicationFiled: February 22, 2010Publication date: September 9, 2010Applicant: SONY CORPORATIONInventors: Norihiko Yamaguchi, Satoshi Taniguchi, Hiroko Miyashita, Yasuhiro Terai
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Patent number: 7791085Abstract: Disclosed herein is a semiconductor light emitting apparatus that includes: a semiconductor light emitting device having a first semiconductor laminate structure including a light emitting region, and a light outgoing window permitting the light emitted from the light emitting region to go out therethrough in the lamination direction; a light transmitting part provided in a region corresponding to the light emitting region; a metal part provided in a region, corresponding to an outer peripheral region of the light emitting region, of the first semiconductor laminate structure; and a semiconductor light detector having a second semiconductor laminate structure including a light absorbing layer for absorbing a part of the light incident from the lamination direction. In the apparatus, the semiconductor light emitting device, a layer including the light transmitting part and the metal part, and the semiconductor light detector are integrally formed in the state of being laminated in this order.Type: GrantFiled: November 27, 2006Date of Patent: September 7, 2010Assignee: Sony CorporationInventors: Rintaro Koda, Takahiro Arakida, Yoshinori Yamauchi, Norihiko Yamaguchi, Yuji Masui
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Publication number: 20100129942Abstract: A nondestructive testing method for an oxide semiconductor layer includes the steps of applying excitation light to an amorphous or polycrystalline target oxide semiconductor layer to be tested and measuring an intensity of photoluminescence in a wavelength region longer than a wavelength corresponding to a bandgap energy among light emitted from the target oxide semiconductor layer; and estimating a film property of the target oxide semiconductor layer on the basis of measurement results.Type: ApplicationFiled: November 19, 2009Publication date: May 27, 2010Applicant: Sony CorporationInventors: Norihiko Yamaguchi, Satoshi Taniguchi, Masao Ikeda
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Patent number: 7675956Abstract: A Vertical Cavity Surface Emitting Laser capable of being easily and inexpensively manufactured and stabilizing the polarization direction of laser light in one direction is provided. The VCSEL includes a semiconductor lamination structure including a first multilayer film reflector, an active layer having a light emitting region, and a second multilayer film reflectors, in this order over a substrate from the substrate side. The semiconductor lamination structure has a pair of grooves provided with a region opposed to the light emitting region in between, and one or a plurality of first oxidation layers including a first non-oxidation region provided at least in a region opposed to the light emitting region and a first oxidation region provided on each side face of the pair of grooves.Type: GrantFiled: March 24, 2008Date of Patent: March 9, 2010Assignee: Sony CorporationInventors: Osamu Maeda, Masaki Shiozaki, Norihiko Yamaguchi, Yoshinori Yamauchi, Takahiro Arakida
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Publication number: 20090194837Abstract: The present invention provides a semiconductor light receiving element capable of reducing capacity while minimizing increase in travel time of carriers. The semiconductor light receiving element includes a semiconductor stacked structure including a first conductivity type layer, a light absorbing layer, and a second conductivity type layer having a light incidence plane in order. The semiconductor light receiving element has an oxidation layer including a non-oxidation region and an oxidation region in a stacking in-plane direction in the light absorbing layer or between the first conductivity type layer and the light absorbing layer.Type: ApplicationFiled: January 29, 2009Publication date: August 6, 2009Applicant: Sony CorporationInventors: Yoshinori Yamauchi, Takahiro Arakida, Rintaro Koda, Norihiko Yamaguchi, Yuji Masui, Tomoyuki Oki
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Publication number: 20090129417Abstract: A surface-emitting laser diode capable of being manufactured easily at low cost, and capable of stabilizing the polarization direction of laser light in one direction and achieving higher output is provided. A light emission section 20 in which a lower first DBR mirror layer 12, a lower second DBR mirror layer 13, a lower spacer layer 14, an active layer 15 including a light emission region 15A, an upper spacer layer 16, a current confinement layer 17, an upper DBR mirror layer 18 and a contact layer 19 are laminated in this order is included on a substrate 10. The lower first DBR mirror layer 12 includes an oxidation section 30 nonuniformly distributed in a direction rotating around the light emission region 15A in a periphery of a region corresponding to the light emission region 15A. The oxidation section 30 includes a pair of multilayer films 31 and 32, and is formed by oxidizing a low refractive index layer 12A.Type: ApplicationFiled: June 4, 2007Publication date: May 21, 2009Applicant: Sony CorporationInventors: Osamu Maeda, Masaki Shiozaki, Norihiko Yamaguchi, Yoshinori Yamauchi
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Publication number: 20090032908Abstract: A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.Type: ApplicationFiled: June 5, 2007Publication date: February 5, 2009Applicant: Sony CorporationInventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Kayoko Kikuchi, Rintaro Koda, Norihiko Yamaguchi
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Publication number: 20080240194Abstract: A VSCEL capable of being easily and inexpensively manufactured and of stabilizing the polarization direction of laser light in one direction is provided. The Vertical Cavity Surface Emitting Laser includes a semiconductor lamination structure including a first multilayer film reflector, an active layer having a light emitting region, and a second multilayer film reflector in this order over a substrate from the substrate side. The semiconductor lamination structure has a pair of grooves provided with a region opposed to the light emitting region in between, and one or a plurality of first oxidation layers including a first non-oxidation region provided at least in a region opposed to the light emitting region and a first oxidation region provided on each side face of the pair of grooves.Type: ApplicationFiled: March 24, 2008Publication date: October 2, 2008Applicant: Sony CorporationInventors: Osamu Maeda, Masaki Shiozaki, Norihiko Yamaguchi, Yoshinori Yamauchi, Takahiro Arakida
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Patent number: 7423294Abstract: A semiconductor light-emitting device includes: a semiconductor light-emitting element including a first conductive type semiconductor layer, an active layer including a light-emitting region, and a second conductive type semiconductor layer in this order; a filter having a transmission characteristic in which the transmittance in a direction parallel to the optical axis of induced emission light of light outputted from the semiconductor light-emitting element is higher than the transmittance in a direction different from the optical axis; and a semiconductor photodetector including a light-absorbing layer, the light-absorbing layer absorbing a part of light passing through the filter, wherein the filter and the semiconductor photodetector are laminated in this order on the second conductive type semiconductor layer of the semiconductor light-emitting element, and are formed with the semiconductor light-emitting element as one unit.Type: GrantFiled: May 23, 2007Date of Patent: September 9, 2008Assignee: Sony CorporationInventors: Rintaro Koda, Takahiro Arakida, Yoshinori Yamauchi, Yuji Masui, Norihiko Yamaguchi
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Publication number: 20080117947Abstract: The present invention provides a laser diode realizing improved light detection precision. The laser diode includes a stack structure in which a first semiconductor layer of a first conduction type, an active layer, and a second semiconductor layer of a second conduction type are included in this order; a photodetection layer; and a plurality of light absorption layers provided on the corresponding position of antinodes or nodes of standing waves of light output from the active layer.Type: ApplicationFiled: October 31, 2007Publication date: May 22, 2008Applicant: Sony CorporationInventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Norihiko Yamaguchi, Rintaro Koda, Tamoyuki Oki
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Publication number: 20070278475Abstract: A semiconductor light-emitting device includes: a semiconductor light-emitting element including a first conductive type semiconductor layer, an active layer including a light-emitting region, and a second conductive type semiconductor layer in this order; a filter having a transmission characteristic in which the transmittance in a direction parallel to the optical axis of induced emission light of light outputted from the semiconductor light-emitting element is higher than the transmittance in a direction different from the optical axis; and a semiconductor photodetector including a light-absorbing layer, the light-absorbing layer absorbing a part of light passing through the filter, wherein the filter and the semiconductor photodetector are laminated in this order on the second conductive type semiconductor layer of the semiconductor light-emitting element, and are formed with the semiconductor light-emitting element as one unit.Type: ApplicationFiled: May 23, 2007Publication date: December 6, 2007Inventors: Rintaro Koda, Takahiro Arakida, Yoshinori Yamauchi, Yuji Masui, Norihiko Yamaguchi