Abstract: The invention relates to a phase shift photomask in which the peripheral region portion of a phase shift layer is removed by a relatively simple procedure and which has no or little defect and is inexpensive, a blank therefor, and a process for fabricating them. The process includes the steps of forming phase shift layer 23 all over the surface of one side of transparent substrate 21, and immersing only the peripheral region of substrate 21 in etching solution 25 to etch away the peripheral region of phase shift layer 23, whereby phase shift layer 27 is confined within an area smaller than that of substrate 21.

Abstract: A phase shift photomask is produced in the following manner. Before or after a light-shielding pattern is formed on a substrate, a transparent film serving as a phase shifter is coated onto the substrate, and the transparent film in a photomask-pattern-forming area exluding the peripheral area of the substrate is irradiated with energy rays. The irradiated portion of the transparent film is thus solidified. The unsolidified portion of the transparent film is removed by etching. A phase shifter pattern is thus formed on the substrate excluding the peripheral area of the substrate. Since the phase shifter pattern is not exposed at the peripheral area of the substrate, a dust which is usually made when the phase shifter pattern formed in this area cracks or peels off the substrate is not made. The number of defective photomasks to be produced can thus be reduced.