Abstract: A photovoltaic element is obtained which allows use of a low-melting solder and can suppress reduction in reliability and output thereof due to mechanical stress or water intrusion. The photovoltaic element has a photoelectric conversion layer and a collector electrode provided on at least one surface of the photoelectric conversion layer. Characteristically, a collector electrode covering layer for covering a surface of the collector electrode is provided and a tab electrode for electrical connection to an exterior electrode is provided on a top surface of the collector electrode through the collector electrode covering layer. A portion of the collector electrode covering layer that lies between the tab electrode and collector electrode comprises a solder layer and another portion of the collector electrode covering layer that covers a lateral surface of the collector electrode comprises a thermosetting resin layer.

Abstract: In the present invention, the optical band gap Eg (eV) of an amorphous silicon carbide film has the following relationship with the content of hydrogen C.sub.H (at. %) and the content of carbon C.sub.C (at. %) in the film:Eg=a+bC.sub.H /100+cC.sub.C /100,where a, b, and c are respectively in the ranges of 1.54.ltoreq.a.ltoreq.1.60, 0.55.ltoreq.b.ltoreq.0.65, and -0.65.ltoreq.c.ltoreq.-0.55, whereby the defect density in the amorphous silicon carbide film can be significantly reduced.

Abstract: In the present invention, atoms are implanted into the surface of at least a crystalline silicon semiconductor of one conductivity type in forming a heterojunction, thereby to bring the surface of the crystalline silicon semiconductor into amorphous to form a substantially intrinsic amorphous silicon layer. An amorphous silicon layer or a microcrystalline silicon layer of an opposite conductivity type is deposited on the amorphous silicon layer, whereby a heterojunction interface is formed in a region deeper than a deposition interface.

Abstract: In a photovoltaic device, when an internal electric field in a photoelectric conversion layer becomes non-uniform in the surface direction of the layer for a reason such as the interface between a transparent conductive film and the photoelectric conversion layer being formed in an irregular shape, the internal electric field in the photoelectric conversion layer is made uniform by (1) making the thickness of an intrinsic layer inside the photoelectric conversion layer in portions of the photoelectric conversion layer where the internal electric field becomes weak smaller than that in the other portions, (2) providing regions where conductivity is high and activation energy is low in the photoelectric conversion layer in the said portions, or (3) containing a ferroelectric material in a portion of the intrinsic layer inside the photoelectric conversion layer.