Abstract: A manufacturing method of a semiconductor device includes preparing a silicon carbide substrate, growing an epitaxial layer, and forming a structure. The silicon carbide substrate has an upper surface on which an alignment mark having a recessed shape is disposed, and a perpendicular line to the upper surface is inclined with respect to a [0001] direction toward a [11-20] direction. The epitaxial layer is grown on the upper surface and covers the alignment mark. The structure is formed on or above the upper surface at a position apart from the alignment mark by an interval P in the [11-20] direction along the upper surface. The interval P satisfies a relationship of D/tan ? < P < 10D/tan ?, where D is a depth of the alignment mark and ? is an inclination angle of the perpendicular line with respect to the [0001] direction.

Abstract: A method of manufacturing a semiconductor device is provided with: implanting charged particles including oxygen into a surface of a SiC wafer; and forming a Schottky electrode that makes Schottky contact with the SiC wafer on the surface after the implantation of the charged particles.

Abstract: A method of manufacturing a semiconductor device is provided with: implanting charged particles including oxygen into a surface of a SiC wafer; and forming a Schottky electrode that makes Schottky contact with the SiC wafer on the surface after the implantation of the charged particles.

Abstract: A manufacturing method for a semiconductor device includes introducing an impurity into a SiC substrate, forming a mixed material layer, which is made from a resin and a fibrous carbon material, on a surface of the SiC material into which the impurity is introduced, performing heat treatment of the SiC substrate in which the mixed material layer is formed on the surface of the SiC substrate, and removing the mixed material layer after the heat treatment.

Abstract: A manufacturing method for a semiconductor device includes introducing an impurity into a SiC substrate, forming a mixed material layer, which is made from a resin and a fibrous carbon material, on a surface of the SiC material into which the impurity is introduced, performing heat treatment of the SiC substrate in which the mixed material layer is formed on the surface of the SiC substrate, and removing the mixed material layer after the heat treatment.