Abstract: A spring manufacturing apparatus includes a supporting body which moves in X, Y, and Z-axes directions of a XYZ orthogonal coordinate system representing a moving direction of a wire rod fed from a wire rod feeding unit as a Z-axis. The supporting body is formed with an opening in which the quill is arranged. The supporting body further includes a tool holder for holding a processing tool for processing the wire rod to a spring. The supporting body arranged at the vicinity of the quill is moved to accurately adjust the relative position of the quill and the processing tool, thereby manufacturing a desired spring.

Abstract: A plant monitor-control apparatus includes a control device which controls a to-be-controlled device of a plant, an operation/monitor device which delivers an operation instruction to the plant, operates the plant via the control device and monitors the plant, and a user skill level management device which manages respective user skill levels and determines an operation authority corresponding to each user skill level.

Abstract: A spring manufacturing apparatus includes a supporting body which moves in X, Y, and Z-axes directions of a XYZ orthogonal coordinate system representing a moving direction of a wire rod fed from a wire rod feeding unit as a Z-axis. The supporting body is formed with an opening in which the quill is arranged. The supporting body further includes a tool holder for holding a processing tool for processing the wire rod to a spring. The supporting body arranged at the vicinity of the quill is moved to accurately adjust the relative position of the quill and the processing tool, thereby manufacturing a desired spring.

Abstract: A plant monitor-control apparatus includes a control device which controls a to-be-controlled device of a plant, an operation/monitor device which delivers an operation instruction to the plant, operates the plant via the control device and monitors the plant, and a user skill level management device which manages respective user skill levels and determines an operation authority corresponding to each user skill level.

Abstract: A buried film and a barrier film are polished together using a slurry in which the polishing rate on a substrate material (in particular, silicon oxide), that on a buried-film material (in particular, tungsten) and that on a barrier-film material (in particular, titanium oxide) are substantially equal to one another. This can materialize a buried structure free from any step or steps, at a high polishing rate.

Abstract: A buried film and a barrier film are polished together using a slurry in which the polishing rate on a substrate material (in particular, silicon oxide), that on a buried-film material (in particular, tungsten) and that on a barrier-film material (in particular, titanium oxide) are substantially equal to one another. This can materialize a buried structure free from any step or steps, at a high polishing rate.

Abstract: A CVD reactor apparatus includes a substrate clamp for clamping a peripheral edge of the front of a substrate disposed in a CVD reactor and, dividing a space in the reactor into a first space adjacent the front of the substrate and a second space adjacent the backside of the substrate. The apparatus also includes a unit for cooling the surface temperature of an inner wall of the reactor to a temperature equal to or less than a deposition lower limit, and a unit for supplying a CVD gas to the first space adjacent the substrate front and supplying an inert gas to the second space adjacent the substrate backside at different pressures and causing a reaction at only the substrate front, a reaction gas monitor and a substrate temperature monitor.