Abstract: In the case of a lens array type homogenizer optical system, the incident angle and intensity of a laser beam 1 entering a large-sized lens (long-axis condenser lens 22) of a long-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while long-axis lens arrays 20a and 20b are reciprocated in a direction corresponding to a long axial direction of a linear beam (X-direction). Therefore, vertical stripes are significantly reduced. Further, the incident angle and intensity of a laser beam 1 entering a large-sized lens (projection lens 30) of a short-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while short-axis lens arrays 26a and 26b are reciprocated in a direction corresponding to a short axial direction of a linear beam (Y-direction). Therefore, horizontal stripes are significantly reduced.

Abstract: A laser irradiation apparatus is provided in which the occurrence of adverse effects on an object to be irradiated with a laser beam due to the difference in the polarization state between pulsed laser beams can be prevented or significantly reduced when the pulsed laser beams emitted from two laser light sources are guided to pass through the same optical path for irradiation of an object to be irradiated with the pulsed laser beams. The laser irradiation apparatus is provided with a first laser light source 3, a second laser light source 4, an optical path combining optical member 7 which guides the pulsed laser beams emitted from the first laser light source 3 and the second laser light source 4 to pass through the same optical path, and a polarization control member 9 which controls polarization state of the pulsed laser beam from the optical path combining optical member 7.

Abstract: A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

Abstract: The energy distribution in the short-side direction of a rectangular laser beam applied to an amorphous semiconductor film (amorphous silicon film) is uniformized. It is possible to the energy distribution in the short-side direction of the rectangular laser beam by the use of a cylindrical lens array 26 or a light guide 36 and concentrating optical systems 28 and 44 or by the use of an optical system including a diffracting optical element. Accordingly, since the effective energy range of a laser beam applied to the amorphous semiconductor film is widened and the transport speed of a substrate 3 can be enhanced as much, it is possible to improve the processing ability of the laser annealing.

Abstract: A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.

Abstract: A laser irradiation apparatus is provided in which the occurrence of adverse effects on an object to be irradiated with a laser beam due to the difference in the polarization state between pulsed laser beams can be prevented or significantly reduced when the pulsed laser beams emitted from two laser light sources are guided to pass through the same optical path for irradiation of an object to be irradiated with the pulsed laser beams. The laser irradiation apparatus is provided with a first laser light source 3, a second laser light source 4, an optical path combining optical member 7 which guides the pulsed laser beams emitted from the first laser light source 3 and the second laser light source 4 to pass through the same optical path, and a polarization control member 9 which controls polarization state of the pulsed laser beam from the optical path combining optical member 7.

Abstract: The irradiation unevenness caused by drift occurring in a beam short-axis direction is reduced without adding a new beam shaping unit and affecting the propagation characteristic of a beam in an optical resonator. A position deviation detector for detecting a position deviation of a laser beam before passing through a beam shaping optical system, an angle deviation detector for detecting an angle deviation of the laser beam before passing through the beam shaping optical system, a deflection mirror for deflecting the laser beam, which is disposed in an optical path between a laser and an object (substrate), and a mirror controller for controlling orientation of the deflection mirror, based on detection data obtained using the position deviation detector and the angle deviation detector so as to eliminate the position deviation from a reference irradiation position in the short-axis direction of a linear beam on a surface to be irradiated.

Abstract: A compound semiconductor is placed in a reaction vessel (12) of which the inner gas is subjected to replacement with a low-vapor-pressure gas (2) whose equilibrium vapor pressure at the melting point of the compound semiconductor is 1 atm or lower. The low-vapor-pressure gas is urged to flow along the surface of the compound semiconductor while keeping the internal pressure of the reaction vessel at a value not lower than that equilibrium vapor pressure. The surface of the compound semiconductor is irradiated with a pulsed-laser light (3) whose photon energy is higher than the band gap of the compound semiconductor. Thus, only that part of the compound semiconductor which is located at the pulsed-laser light irradiation position is instantly heated and melted while keeping the atmospheric temperature of the low-vapor-pressure gas at a room temperature or a temperature equal to or lower than the decomposition temperature.

Abstract: An object of the present invention is to provide a laser annealing method and apparatus capable of performing uniform beam emission. By means of the present invention, uniform beam application to a sample can be achieved because a linear cross-sectional configuration can be created in an optical system with a beam having a Gaussian distribution while areas of strong light intensity are avoided by rotating the beam from a laser light source at a prescribed angle by means of rotating means even when the beam pattern of the beam from the laser light source has a non-uniform intensity distribution.

Abstract: A laser irradiation apparatus having a low running cost compared to the conventional, and a laser irradiation method using the laser irradiation apparatus, are provided. Crystal grains having a size in the same order as, or greater than, conventional grains are formed. The cooling speed of a semiconductor film is made slower, and it becomes possible to form crystal grains having a grain size in the same order as, or greater than, the size of grains formed in the case of irradiating laser light having a long output time to the semiconductor film. This is achieved by delaying one laser light with respect to another laser light, combining the laser lights, and performing irradiation to the semiconductor film in the case of irradiating laser light using a solid state laser as a light source, which has a short output time.

Abstract: An object of the present invention is to provide a laser annealing method and apparatus capable of performing uniform beam emission. By means of the present invention, uniform beam application to a sample (50) can be achieved because a linear cross-sectional configuration can be created in an optical system (57) with a beam having a Gaussian distribution while areas of strong light intensity are avoided by rotating the beam (41) from a laser light source at a prescribed angle by means of rotating means (42) even when the beam pattern of the beam (41) from the laser light source has a nonuniform intensity distribution.

Abstract: Disclosed is a laser irradiating apparatus which forms a laser beam having an improved and uniform energy distribution on or near its irradiation surface in case where a laser oscillator having a high coherence is used. The laser irradiating apparatus forms a laser beam having a cyclic energy distribution by intentionally forming interference fringes on or near the irradiation surface by utilizing a high coherence, so that the energy distribution of the laser beam is cyclically repeated. From a macro viewpoint, such a laser beam can be considered as having a uniform energy distribution.

Abstract: Disclosed is a laser irradiating apparatus which forms a laser beam having an improved and uniform energy distribution on or near its irradiation surface in case where a laser oscillator having a high coherence is used. The laser irradiating apparatus forms a laser beam having a cyclic energy distribution by intentionally forming interference fringes on or near the irradiation surface by utilizing a high coherence, so that the energy distribution of the laser beam is cyclically repeated. From a macro viewpoint, such a laser beam can be considered as having a uniform energy distribution.

Abstract: A laser irradiation apparatus having a low running cost compared to the conventional, and a laser irradiation method using the laser irradiation apparatus, are provided. Crystal grains having a size in the same order as, or greater than, conventional grains are formed. The cooling speed of a semiconductor film is made slower, and it becomes possible to form crystal grains having a grain size in the same order as, or greater than, the size of grains formed in the case of irradiating laser light having a long output time to the semiconductor film. This is achieved by delaying one laser light with respect to another laser light, combining the laser lights, and performing irradiation to the semiconductor film in the case of irradiating laser light using a solid state laser as a light source, which has a short output time.

Abstract: Disclosed is an inorganic porous substance-containing styrenic resin composition comprising 100 parts by weight of a styrenic resin and from 0.5 to 30 parts by weight of an inorganic porous substance. The composition is formed into packaging materials in the form of film, tray, bag or other containers, and these have an excellent freshness-keeping effect for packaging plants, especially vegetables and fruits. The effect for keeping the taste and flavor of vegetables and fruits is remarkable, and the composition of the invention is useful as a packaging material.