Abstract: An image processing method includes acquiring a captured image obtained by image capturing using an optical system, acquiring correction strength for a sharpening process applied to a partial area in the captured image, and applying the sharpening process to the partial area based on a first optical characteristic and the correction strength, wherein the correction strength is acquired based on a second optical characteristic, wherein the first optical characteristic is an optical characteristic of the optical system in a case where the optical system is defocused by a first defocus amount, wherein the second optical characteristic is an optical characteristic of the optical system in a case where the optical system is defocused by a second defocus amount, and wherein the second defocus amount is smaller than the first defocus amount.

Abstract: A method includes sharpening a first image to generate a second image, generating a first weight map based on the first image, generating a second weight map based on the second image, and generating a third image based on the first image, the second image, the first weight map, and the second weight map, wherein each of the first weight map and the second weight map indicate a weight of one of the first image and the second image in the generation of the third image.

Abstract: A battery, including: a positive electrode; a negative electrode; and an electrolyte layer containing a negative electrode active material.

Abstract: A battery, including: a positive electrode; a negative electrode; and an electrolyte layer containing a negative electrode active material.

Abstract: Provided is a photoelectric conversion element including a photoelectric conversion material layer that is constituted by an organic material having more excellent sensitivity and responsiveness than those of conventional ones. The photoelectric conversion element of the present invention includes: (a-1) a first electrode and a second electrode which are disposed apart from each other; and (a-2) a photoelectric conversion area which is disposed between the first electrode and the second electrode, wherein the photoelectric conversion area includes multiple layers and at least one of the multiple layers is formed of a dioxaanthanthrene-based compound represented by the structural formula (1).

Abstract: There are provided a 6,12-dioxaanthanthrene derivative which is an organic semiconductor material capable of improving resistance to mechanical deformation, an organic semiconductor element, and a method for manufacturing the organic semiconductor element. The 6,12-dioxaanthanthrene derivative is represented by structural formula (1). R3 and R9 are photopolymerizable unsaturated groups. R5 and R11 are non-photopolymerizable substituents.

Abstract: Provided is a photoelectric conversion element including a photoelectric conversion material layer that is constituted by an organic material having more excellent sensitivity and responsiveness than those of conventional ones. The photoelectric conversion element of the present invention includes: (a-1) a first electrode and a second electrode which are disposed apart from each other; and (a-2) a photoelectric conversion area which is disposed between the first electrode and the second electrode, wherein the photoelectric conversion area includes multiple layers and at least one of the multiple layers is formed of a dioxaanthanthrene-based compound represented by the structural formula (1).

Abstract: Provided is a photoelectric conversion element including a photoelectric conversion material layer that is constituted by an organic material having more excellent sensitivity and responsiveness than those of conventional ones. The photoelectric conversion element of the present invention includes (a-1) a first electrode 21 and a second electrode 22 which are disposed apart from each other, and (a-2) a photoelectric conversion material layer 30 that is disposed between the first electrode 21 and the second electrode 22, wherein the photoelectric conversion material layer 30 is formed of a dioxaanthanthrene-based compound represented by the following structural formula (1).

Abstract: There are provided a 6,12-dioxaanthanthrene derivative which is an organic semiconductor material capable of improving resistance to mechanical deformation, an organic semiconductor element, and a method for manufacturing the organic semiconductor element. The 6,12-dioxaanthanthrene derivative is represented by structural formula (1). R3 and R9 are photopolymerizable unsaturated groups. R5 and R11 are non-photopolymerizable substituents.

Abstract: Provided is a method of producing an organic transistor, including collectively forming a gate insulating film and an organic semiconductor film by applying, onto a gate electrode, a solution including a polymer and at least one of compounds represented by General Formulas 1 to 4 and 5 to 7, a compound having a structure represented by General Formula 4, a compound having a structure represented by General Formula 5 or 6, and forming a source electrode and a drain electrode on the organic semiconductor film. (where R is a linear or branched alkyl group) (where R is an alkyl group) (where R is an alkyl group) (where A1 and A2 are represented by Formula 8) (where R is an alkyl group or another substituent).

Abstract: Provided is a dioxaanthanthrene compound represented by the following structural formula (1).

Abstract: Provided is an organic semiconductor layer including a mixture of a first polycyclic aromatic hydrocarbon to which a substituent R1 other than a hydrogen atom is bonded by a single bond, and a second polycyclic aromatic hydrocarbon.

Abstract: An anthanthrene based compound of the structural formula (1) is disclosed: wherein X represents an element of the Group 16; n represents an integer of from 0 to 20; m represents an integer of from 1 to 9; a bonding position in the A segment to the B segment, a bonding position in the B segment to the A segment, a bonding position in the B segment to the C segment, and a bonding position in the C segment to the B segment are at least one of from the 1-position to the 5-position and from the 7-position to the 11-position; and each of substituents R1, R2, R3, R4, R5, R7, R8, R9, R10 and R11 independently represents, for example, a substituent of one member selected from the group consisting of a hydrogen atom, an alkyl group, an aryl group, an arylalkyl group and the like.

Abstract: Provided is a dioxaanthanthrene compound represented by, for example, the following structural formula (1).

Abstract: [Object] To provide a method of bonding an organic molecular crystal layer, which is capable of bonding an organic molecular crystal layer to an electrode by controlling the alignment of the organic molecular crystal layer, and to provide a method of manufacturing an organic element using the bonding method. [Solving Means] Alignment of an organic molecular crystal layer 13 with respect to an electrode 12 is controlled by controlling an inclined angle of a side surface 12a of the electrode 12 with respect to a main surface of an insulating base 11, in the case where the electrode 12 and the organic molecular crystal layer 13 are formed on the insulating base 11, the organic molecular crystal layer 13 including an aromatic compound, the organic molecular crystal layer 13 being bonded to the electrode 12. The side surface of the electrode 12 may be formed to have a plurality of surfaces having different inclined angles.

Abstract: Provided is a method of producing an organic transistor, including collectively forming a gate insulating film and an organic semiconductor film by applying, onto a gate electrode, a solution including a polymer and at least one of compounds represented by General Formulas 1 to 4 and 5 to 7, a compound having a structure represented by General Formula 4, a compound having a structure represented by General Formula 5 or 6, and forming a source electrode and a drain electrode on the organic semiconductor film.

Abstract: A semiconductor device including a gate electrode, a gate insulating layer, source/drain electrodes, and a channel-forming region that are disposed on a base is provided. The method includes the steps of forming a thin film by application of a mixed solution including a polymeric insulating material and a dioxaanthanthrene compound represented by structural formula (1) below; and subsequently drying the thin film to induce phase separation of the polymeric insulating material and the dioxaanthanthrene compound, thereby forming the gate insulating layer from the polymeric insulating material and the channel-forming region from the dioxaanthanthrene compound: wherein at least one of R3 and R9 represents a substituent other than hydrogen.

Abstract: There is provided a method of forming an organic thin film, capable of forming a single-crystal organic thin film easily and rapidly while controlling a thickness and a size. After an organic solution is supplied to one surface (a solution accumulating region wide in width, and a solution constricting region narrow in width and connected thereto) of a film-formation substrate supported by a support controllable in temperature, a movable body controllable in temperature independently of the support is moved along a surface of the support while being kept in contact with the organic solution. The temperature of the support is set at a temperature positioned between a solubility curve and a super-solubility curve concerning the organic solution, and the temperature of the movable body is set at a temperature positioned on a side higher in temperature than the solubility curve.

Abstract: Provided is a photoelectric conversion element including a photoelectric conversion material layer that is constituted by an organic material having more excellent sensitivity and responsiveness than those of conventional ones. The photoelectric conversion element of the present invention includes (a-1) a first electrode 21 and a second electrode 22 which are disposed apart from each other, and (a-2) a photoelectric conversion material layer 30 that is disposed between the first electrode 21 and the second electrode 22, wherein the photoelectric conversion material layer 30 is formed of a dioxaanthanthrene-based compound represented by the following structural formula (1).

Abstract: A method of manufacturing a semiconductor device including a gate electrode, a gate insulating layer, source/drain electrodes, and a channel-forming region that are disposed on a base is provided. The method includes the steps of forming a thin film by application of a mixed solution including a polymeric insulating material and a dioxaanthanthrene compound represented by structural formula (1) below; and subsequently drying the thin film to induce phase separation of the polymeric insulating material and the dioxaanthanthrene compound, thereby forming the gate insulating layer from the polymeric insulating material and the channel-forming region from the dioxaanthanthrene compound: wherein at least one of R3 and R9 represents a substituent other than hydrogen.