Abstract: Original cell design rule violations with respect to a second wiring layer are identified, while conductors of the second wiring layer are in an original position. The conductors of the second wiring layer are offset into different offset positions, and then the process of identifying violations is repeated for each of the offset positions. With this, metrics are generated for the original cell for the original position and each of the offset positions. Then, the original cell or the pitch of the second wiring layer are altered to produce alterations. The processes of identifying violations, offsetting conductors in the second wiring layer, repeating the identification of violations for all offsets, and generating metrics are repeated for each of the alterations. The original cell or one of the alterations is then selected, based on which cell produces the lowest number of violations of the design rules.

Abstract: Original cell design rule violations with respect to a second wiring layer are identified, while conductors of the second wiring layer are in an original position. The conductors of the second wiring layer are offset into different offset positions, and then the process of identifying violations is repeated for each of the offset positions. With this, metrics are generated for the original cell for the original position and each of the offset positions. Then, the original cell or the pitch of the second wiring layer are altered to produce alterations. The processes of identifying violations, offsetting conductors in the second wiring layer, repeating the identification of violations for all offsets, and generating metrics are repeated for each of the alterations. The original cell or one of the alterations is then selected, based on which cell produces the lowest number of violations of the design rules.

Abstract: A semiconductor device, a layout device and a layout method in which, if the size of a via interconnecting a first conductor provided in an interconnect layer and a second conductor which is provided in an interconnect layer different from the interconnect layer of the first conductor and which intersects the first conductor by solid crossing, is not less than the line width of the first conductor, and if, in case the center point of the via is arranged on a center axis along the longitudinal direction of the first conductor, the minimum spacing cannot be maintained between the first conductor and the line neighboring to the first conductor, the center of the via, arranged on the first conductor, is placed with an offset of a predetermined value with respect to the longitudinal center axis of the first conductor, so that a spacing not less than the minimum spacing is maintained between the first conductor and the line neighboring to the first conductor and in the via placement region on the first conductor.

Abstract: To improve a degree of integration and reliability of a semiconductor integrated circuit device. There are included third wire 14 arranged in the same layer as first wire 11 and second wire 12 and arranged in a direction intersecting with the first wire 11 and the second wire 12, first gate material wire 18 arranged between the first wire 11 and first well 5 in the vicinity of an intersecting point between wiring directions of the first wire 11 and the third wire 14 and electrically connected to the third wire 14 through via holes, and first diffusion layer 6 arranged in second well 4 in the vicinity of an intersecting point between wiring directions of the second wire 12 and the third wire 14. The first diffusion layer 6 is electrically connected to the third wire 14 through via holes and each includes impurities having a concentration higher than each of the second wells 4.

Abstract: A semiconductor device, a layout device and a layout method in which, if the size of a via interconnecting a first conductor provided in an interconnect layer and a second conductor which is provided in an interconnect layer different from the interconnect layer of the first conductor and which intersects the first conductor by solid crossing, is not less than the line width of the first conductor, and if, in case the center point of the via is arranged on a center axis along the longitudinal direction of the first conductor, the minimum spacing cannot be maintained between the first conductor and the line neighboring to the first conductor, the center of the via, arranged on the first conductor, is placed with an offset of a predetermined value with respect to the longitudinal center axis of the first conductor, so that a spacing not less than the minimum spacing is maintained between the first conductor and the line neighboring to the first conductor and in the via placement region on the first conductor.

Abstract: To improve a degree of integration and reliability of a semiconductor integrated circuit device. There are included third wire 14 arranged in the same layer as first wire 11 and second wire 12 and arranged in a direction intersecting with the first wire 11 and the second wire 12, first gate material wire 18 arranged between the first wire 11 and first well 5 in the vicinity of an intersecting point between wiring directions of the first wire 11 and the third wire 14 and electrically connected to the third wire 14 through via holes, and first diffusion layer 6 arranged in second well 4 in the vicinity of an intersecting point between wiring directions of the second wire 12 and the third wire 14. The first diffusion layer 6 is electrically connected to the third wire 14 through via holes and each includes impurities having a concentration higher than each of the second wells 4.

Abstract: A semiconductor device, a layout device and a layout method in which, if the size of a via interconnecting a first conductor provided in an interconnect layer and a second conductor which is provided in an interconnect layer different from the interconnect layer of the first conductor and which intersects the first conductor by solid crossing, is not less than the line width of the first conductor, and if, in case the center point of the via is arranged on a center axis along the longitudinal direction of the first conductor, the minimum spacing cannot be maintained between the first conductor and the line neighboring to the first conductor, the center of the via, arranged on the first conductor, is placed with an offset of a predetermined value with respect to the longitudinal center axis of the first conductor, so that a spacing not less than the minimum spacing is maintained between the first conductor and the line neighboring to the first conductor and in the via placement region on the first conductor.

Abstract: A semiconductor device, a layout device and a layout method in which, if the size of a via interconnecting a first conductor provided in an interconnect layer and a second conductor which is provided in an interconnect layer different from the interconnect layer of the first conductor and which intersects the first conductor by solid crossing, is not less than the line width of the first conductor, and if, in case the center point of the via is arranged on a center axis along the longitudinal direction of the first conductor, the minimum spacing cannot be maintained between the first conductor and the line neighboring to the first conductor, the center of the via, arranged on the first conductor, is placed with an offset of a predetermined value with respect to the longitudinal center axis of the first conductor, so that a spacing not less than the minimum spacing is maintained between the first conductor and the line neighboring to the first conductor and in the via placement region on the first conductor.