Abstract: A laminated member includes a glass member of which a linear transmittance at a wavelength of 850 nm is 80% or more, a bonding layer provided on or above the glass member, the bonding layer being constituted by a resin, and a ceramic member provided on or above the bonding layer, the ceramic member being constituted by an SiC member or an AlN member.

Abstract: A laminated member includes a glass member of which a linear transmittance at a wavelength of 850 nm is 80% or more, a bonding layer provided on or above the glass member, the bonding layer being constituted by a resin, and a Si—SiC member provided on or above the bonding layer.

Abstract: A laminated member includes a glass member of which a linear transmittance at a wavelength of 850 nm is 80% or more, a bonding layer provided on or above the glass member, the bonding layer being constituted by a resin, and a Si—SiC member provided on or above the bonding layer.

Abstract: A laminated member includes a glass member of which a linear transmittance at a wavelength of 850 nm is 80% or more, a bonding layer provided on or above the glass member, the bonding layer being constituted by a resin, and a ceramic member provided on or above the bonding layer, the ceramic member being constituted by an SiC member or an AlN member.

Abstract: The present invention relates to a polishing method for polishing a to-be-polished surface including a polysilicon film having a silicon dioxide film directly thereunder, in manufacturing a semiconductor integrated circuit device, the method including: a first polishing step of polishing and planarizing the polysilicon film with a first abrasive containing a cerium oxide particle, water and an acid; and a second polishing step of polishing the polysilicon film planarized in the first polishing step with a second abrasive containing at least a cerium oxide particle, water, an acid and a water-soluble polyamine or a salt thereof and stopping polishing by exposure of the silicon dioxide film.

Abstract: A heterocyclic benzene compound such as benzotriazole, is dissolved in at least one substance selected from the group consisting of a primary alcohol having from 1 to 4 carbon atoms, a glycol having from 2 to 4 carbon atoms, an ether represented by the Formula 2 (wherein m is an integer of from 1 to 4), N-methyl-2-pyrrolidone, N,N-dimethylformamide, dimethyl sulfoxide, ?-butyrolactone and propylene carbonate, and an aqueous dispersion of fine oxide particles which constitute abrasive grains is mixed therewith, whereby a polishing compound is obtained. By use of this polishing compound in polishing a substrate provided with an insulating film 2 on which a wiring metal film 4 and a barrier film 3 are formed, the formation of an embedded wiring 5 is made possible with low dishing, low erosion and low scratching at a high removal rate.

Abstract: A semiconductor polishing compound comprising cerium oxide abrasive grains, water and an additive, wherein the additive is a water-soluble organic polymer such as ammonium polyacrylate or an anionic surfactant, the pH at 25° C. is from 3.5 to 6, and the concentration of the additive is from 0.01 to 0.5% based on the total mass of the polishing compound. This polishing compound simultaneously has dispersion stability, excellent scratch characteristics and excellent polishing planarization characteristics. In particular, this polishing compound provides excellent planarization characteristics having dishing fluctuation reduced, when used for polishing a semiconductor substrate having a silicon nitride film 3 and a silicon oxide film 2 formed on a silicon substrate 1. Further, the time for polishing a pattern wafer can be shortened by using this polishing compound.

Abstract: The present invention is to provide a polishing technique ensuring that when polishing a to-be-polished surface in the production of a semiconductor integrated circuit device, appropriate polishing rate ratios can be obtained between a borophosphosilicate glass material layer and other materials and high planarization of the to-be-polished surface containing a borophosphosilicate glass material layer can be thereby realized. The present invention relates to a polishing agent for chemical mechanical polishing, containing a cerium oxide particle, a water-soluble polyamine, one or more basic compounds selected from the group consisting of monoethanolamine, ethylethanolamine, diethanolamine and ammonia, and water, wherein the polishing agent has a pH of from 10 to 13 and wherein the basic compound is contained in an amount of more than 0.01 mass %.

Abstract: The present invention provides a technique for realizing highly flat surface of a semiconductor integrated circuit employing copper as a wiring metal. The present invention provides a polishing composition containing a neutralized carboxylic acid, an oxidizer and water, wherein a part of the carboxylic acid is an alicyclic resin acid (A) and the pH value is within a range of from 7.5 to 12. The alicyclic resin acid is preferably at least one type selected from the group consisting of abietic acid, an isomer of abietic acid, pimaric acid, an isomer of pimaric acid and derivatives of these, or a rosin. Further, the present invention provides a polishing method of semiconductor integrated circuit surface in which a copper film formed on a surface having a groove for wiring, by using the polishing composition, and the present invention provides a copper wiring for semiconductor integrated circuit formed by this polishing method.

Abstract: To provide a semiconductor polishing compound which is excellent in dispersion stability and removal rate and which has a stabilized polishing property, as it is less susceptible to an influence even when contacted with an alkaline polishing compound during its application to CMP comprising a multistage process. A polishing compound for chemical mechanical polishing to polish a surface to be polished in the production of a semiconductor circuit device, said polishing compound comprising cerium oxide abrasive particles, water and a dicarboxylic acid represented by the formula 1: HOOC(CH2)nCOOH??Formula 1 wherein n is an integer of from 1 to 4, and the pH of said polishing compound at 25° C. being within a range of from 3.5 to 6.

Abstract: A semiconductor polishing compound comprising cerium oxide abrasive grains, water and an additive, wherein the additive is a water-soluble organic polymer such as ammonium polyacrylate or an anionic surfactant, the pH at 25° C. is from 3.5 to 6, and the concentration of the additive is from 0.01 to 0.5% based on the total mass of the polishing compound. This polishing compound simultaneously has dispersion stability, excellent scratch characteristics and excellent polishing planarization characteristics. In particular, this polishing compound provides excellent planarization characteristics having dishing fluctuation reduced, when used for polishing a semiconductor substrate having a silicon nitride film 3 and a silicon oxide film 2 formed on a silicon substrate 1. Further, the time for polishing a pattern wafer can be shortened by using this polishing compound.

Abstract: A holographic display device, e.g. for a vehicle, which reduces a color of hologram reflection toward the outside of the vehicle or a color of hologram transmission toward the inside of the vehicle generated at a hologram installation portion of a wind-proof glass, and which further reduces an external light noise. Light from a display element is transmitted through an imaging optical component to form a display image on a transmission diffusion hologram provided to a wind-proof glass, and the display image is reflected on the surface on the vehicle outer side of the wind-proof glass for visual recognition by an observer. The above transmission diffusion hologram is produced by diffused light, which is transmitted through a diffusion optical component, being made to fall on one side of a hologram photosensitive material.

Abstract: A holographic display device for a vehicle, which reduces a color of hologram reflection toward the outside of the vehicle or a color of hologram transmission toward the inside of the vehicle generated at a hologram installation portion of a wind-proof glass, and which further reduces an external light nose, can be provided.

Abstract: As a combiner, a hologram prepared by exposure to light is used wherein a combination of the central wavelength .lambda., the halfwidth .DELTA..lambda. and the diffraction efficiency .eta. of the diffraction spectrum of light minimizes the color difference between the color tone of light from a light source and the color tone in average of reflection light by the combiner, when observed by changing the angle, or the sum of the square of the color differences between the color tone of the light from the light source when observed by changing the angle and the color tone of the reflection light by the combiner.

Abstract: A hed-up display comprises a light source and a liquid crystal display device for displaying an image, and a hologram arranged on a windshield glass of a vehicle to diffract the light to an observer, wherein the hologram has the half width of the diffraction spectrum so that a white light entering into the vehicle from the outside is diffracted as substantially a white light.