Patents by Inventor Noriiki Masuda
Noriiki Masuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240103482Abstract: A temperature control method of controlling a temperature of a semiconductor wafer mounted on a mounting table includes a supply process of supplying, in a state that a supply of a power to a heater configured to heat the mounting table is stopped or the power is maintained to be constant, a heat transfer gas into a gap between the semiconductor wafer and the mounting table; a measurement process of measuring a temperature variation of the mounting table due to heat exchange between the semiconductor wafer and the mounting table through the heat transfer gas; a calculation process of calculating a correction value based on the temperature variation of the mounting table; and a control process of starting the supply of the power and controlling the power such that the temperature of the mounting table reaches a target temperature corrected with the correction value.Type: ApplicationFiled: December 7, 2023Publication date: March 28, 2024Inventors: Takari Yamamoto, Noriiki Masuda, Kenichiro Nakamura, Hiroshi Koizumi
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Publication number: 20210343503Abstract: An apparatus for etching a substrate includes a chamber, a substrate support, a radio frequency (RF) power supply, and a RF filter. The substrate support is disposed in the chamber. The substrate support has an electrode, an electrostatic chuck disposed on the electrode, and a conductive edge ring disposed to surround the substrate placed on the electrostatic chuck. The RF power supply is configured to supply RF power to generate plasma from a gas inside the chamber. The RF filter has a variable impedance. The edge ring and the RF filter are electrically directly connected through a connecting unit.Type: ApplicationFiled: April 29, 2021Publication date: November 4, 2021Applicant: Tokyo Electron LimitedInventors: Natsumi TORII, Koichi NAGAMI, Noriiki MASUDA, Takayuki SUZUKI
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Publication number: 20210132575Abstract: A temperature control method of controlling a temperature of a semiconductor wafer mounted on a mounting table includes a supply process of supplying, in a state that a supply of a power to a heater configured to heat the mounting table is stopped or the power is maintained to be constant, a heat transfer gas into a gap between the semiconductor wafer and the mounting table; a measurement process of measuring a temperature variation of the mounting table due to heat exchange between the semiconductor wafer and the mounting table through the heat transfer gas; a calculation process of calculating a correction value based on the temperature variation of the mounting table; and a control process of starting the supply of the power and controlling the power such that the temperature of the mounting table reaches a target temperature corrected with the correction value.Type: ApplicationFiled: January 15, 2021Publication date: May 6, 2021Inventors: Takari Yamamoto, Noriiki Masuda, Kenichiro Nakamura, Hiroshi Koizumi
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Patent number: 10921773Abstract: A temperature control method of controlling a temperature of a semiconductor wafer mounted on a mounting table includes a supply process of supplying, in a state that a supply of a power to a heater configured to heat the mounting table is stopped or the power is maintained to be constant, a heat transfer gas into a gap between the semiconductor wafer and the mounting table; a measurement process of measuring a temperature variation of the mounting table due to heat exchange between the semiconductor wafer and the mounting table through the heat transfer gas; a calculation process of calculating a correction value based on the temperature variation of the mounting table; and a control process of starting the supply of the power and controlling the power such that the temperature of the mounting table reaches a target temperature corrected with the correction value.Type: GrantFiled: June 22, 2016Date of Patent: February 16, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Takari Yamamoto, Noriiki Masuda, Kenichiro Nakamura, Hiroshi Koizumi
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Publication number: 20210035831Abstract: A substrate position detecting method, includes loading a substrate into a processing chamber such that a clean surface of the substrate faces a mounting surface of a stage provided in the processing chamber, mounting the loaded substrate on the stage, fixing the substrate to the stage, releasing the fixing of the substrate to the stage, unloading the substrate out of the processing chamber, detecting a particle distribution of particles on the clean surface of the unloaded substrate, and calculating a positional relationship between the substrate and the stage when the substrate is mounted on the stage, based on the detected particle distribution. The particles include irregularities formed at the time of contact between the clean surface of the substrate and the mounting surface.Type: ApplicationFiled: July 31, 2020Publication date: February 4, 2021Inventors: Toshiyuki ARAKANE, Noriiki MASUDA, Masanori SATO
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Publication number: 20160378092Abstract: A temperature control method of controlling a temperature of a semiconductor wafer mounted on a mounting table includes a supply process of supplying, in a state that a supply of a power to a heater configured to heat the mounting table is stopped or the power is maintained to be constant, a heat transfer gas into a gap between the semiconductor wafer and the mounting table; a measurement process of measuring a temperature variation of the mounting table due to heat exchange between the semiconductor wafer and the mounting table through the heat transfer gas; a calculation process of calculating a correction value based on the temperature variation of the mounting table; and a control process of starting the supply of the power and controlling the power such that the temperature of the mounting table reaches a target temperature corrected with the correction value.Type: ApplicationFiled: June 22, 2016Publication date: December 29, 2016Inventors: Takari Yamamoto, Noriiki Masuda, Kenichiro Nakamura, Hiroshi Koizumi
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Patent number: 9466506Abstract: The present invention is to provide a technique for uniformly processing a substrate surface in the process of processing a substrate by supplying a gas. The inside of a shower head having gas-jetting pores for supplying a gas to a substrate is partitioned into a center section from which a gas is supplied to the center portion of a substrate, and a peripheral section from which a gas is supplied to the peripheral portion of the substrate, and the same process gas is supplied to the substrate from these two sections at flow rates separately regulated. The distance from the center of the center section of the gas supply unit to the outermost gas-jetting pores in the center section is set 53% or more of the radius of the substrate. Moreover, an additional gas is further supplied to the peripheral portion of the substrate.Type: GrantFiled: December 5, 2012Date of Patent: October 11, 2016Assignee: TOKYO ELECTRON LIMITEDInventor: Noriiki Masuda
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Patent number: 8679255Abstract: A gas supply mechanism includes a gas introduction member having gas inlet portions through which a gas is introduced into a processing chamber, a processing gas supply unit, a processing gas supply path, branch paths, an additional gas supply unit and an additional gas supply path. The gas inlet portions includes inner gas inlet portions for supplying the gas toward a region where a target substrate is positioned in the chamber and an outer gas inlet portion for introducing the gas toward a region outside an outermost periphery of the target substrate. The branch paths are connected to the inner gas inlet portions, and the additional gas supply path is connected to the outer gas inlet portion.Type: GrantFiled: April 26, 2013Date of Patent: March 25, 2014Assignee: Tokyo Electron LimitedInventor: Noriiki Masuda
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Publication number: 20130237058Abstract: A gas supply mechanism includes a gas introduction member having gas inlet portions through which a gas is introduced into a processing chamber, a processing gas supply unit, a processing gas supply path, branch paths, an additional gas supply unit and an additional gas supply path. The gas inlet portions includes inner gas inlet portions for supplying the gas toward a region where a target substrate is positioned in the chamber and an outer gas inlet portion for introducing the gas toward a region outside an outermost periphery of the target substrate. The branch paths are connected to the inner gas inlet portions, and the additional gas supply path is connected to the outer gas inlet portion.Type: ApplicationFiled: April 26, 2013Publication date: September 12, 2013Applicant: Tokyo Electron LimitedInventor: Noriiki MASUDA
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Patent number: 8430962Abstract: A gas supply mechanism includes a gas introduction member having gas inlet portions through which a gas is introduced into a processing chamber, a processing gas supply unit, a processing gas supply path, branch paths, an additional gas supply unit and an additional gas supply path. The gas inlet portions includes inner gas inlet portions for supplying the gas toward a region where a target substrate is positioned in the chamber and an outer gas inlet portion for introducing the gas toward a region outside an outermost periphery of the target substrate. The branch paths are connected to the inner gas inlet portions, and the additional gas supply path is connected to the outer gas inlet portion.Type: GrantFiled: October 31, 2008Date of Patent: April 30, 2013Assignee: Tokyo Electron LimitedInventor: Noriiki Masuda
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Publication number: 20090117746Abstract: A gas supply mechanism includes a gas introduction member having gas inlet portions through which a gas is introduced into a processing chamber, a processing gas supply unit, a processing gas supply path, branch paths, an additional gas supply unit and an additional gas supply path. The gas inlet portions includes inner gas inlet portions for supplying the gas toward a region where a target substrate is positioned in the chamber and an outer gas inlet portion for introducing the gas toward a region outside an outermost periphery of the target substrate. The branch paths are connected to the inner gas inlet portions, and the additional gas supply path is connected to the outer gas inlet portion.Type: ApplicationFiled: October 31, 2008Publication date: May 7, 2009Applicant: TOKYO ELECTRON LIMITEDInventor: Noriiki MASUDA
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Publication number: 20080078746Abstract: The present invention is to provide a technique for uniformly processing a substrate surface in the process of processing a substrate by supplying a gas. The inside of a shower head having gas-jetting pores for supplying a gas to a substrate is partitioned into a center section from which a gas is supplied to the center portion of a substrate, and a peripheral section from which a gas is supplied to the peripheral portion of the substrate, and the same process gas is supplied to the substrate from these two sections at flow rates separately regulated. The distance from the center of the center section of the gas supply unit to the outermost gas-jetting pores in the center section is set 53% or more of the radius of the substrate. Moreover, an additional gas is further supplied to the peripheral portion of the substrate.Type: ApplicationFiled: August 14, 2007Publication date: April 3, 2008Inventor: Noriiki Masuda
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Publication number: 20080066868Abstract: A focus ring of a plasma processing apparatus for performing a plasma processing on a target substrate to be processed is disposed on the mounting table to surround the target substrate. The focus ring includes a first ring-shaped member made of a conductive material and having a stepped portion at an inner peripheral portion thereof, the stepped portion being positioned lower than a bottom surface of the target substrate mounted on the mounting table and extended below a peripheral portion of the target substrate. The focus ring further includes a second ring-shaped member made of an insulating material and disposed under the first ring-shaped member to be interposed between the first ring-shaped member and the mounting table.Type: ApplicationFiled: September 18, 2007Publication date: March 20, 2008Applicant: TOKYO ELECTRON LIMITEDInventor: Noriiki MASUDA
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Publication number: 20030192857Abstract: When etching a stacked-film layer including a plurality of films made of different quality materials by means of a magnetron plasma etching method, a magnetic field angle &thgr; at which the magnetic line of force 45 intersects the edge portion of a wafer surface approximately at right angles, is optimized and set to every sort of the film to be etched, thereby enabling good etching uniformity to be realized.Type: ApplicationFiled: April 11, 2003Publication date: October 16, 2003Applicant: TOKYO ELECTRON LIMITEDInventors: Noriiki Masuda, Manabu Sato