Patents by Inventor Norikazu Mizuno

Norikazu Mizuno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230298883
    Abstract: Provided is processing of a substrate including: forming film on substrate by performing cycle, multiple times, including non-simultaneously performing: (a) supplying precursor gas and inert gas to the substrate; and (b) supplying reaction gas to the substrate. In (a), at least one of the precursor and inert gas stored in first tank is supplied to the substrate, and at least one of the precursor and inert gas stored in second tank is supplied to the substrate. A concentration of the precursor gas in the first tank differs from that in the second tank. Further, in (a), the at least one of the precursor and inert gas is supplied from the first tank to the substrate, and the at least one of the precursor and inert gas is supplied from the second tank to the substrate to suppress multiple adsorption of molecules constituting the precursor gas on the substrate's surface.
    Type: Application
    Filed: May 24, 2023
    Publication date: September 21, 2023
    Applicant: Kokusai Electric Corporation
    Inventors: Masayuki ASAI, Tomoki Imamura, Kazuyuki Okuda, Yasuhiro Inokuchi, Norikazu Mizuno
  • Publication number: 20230230845
    Abstract: There is provided a technique that includes: (a) adjusting a temperature of a substrate to a first temperature; (b) forming a first molybdenum-containing film on the substrate by performing: (b1) supplying a molybdenum-containing gas to the substrate; and (b2) supplying a reducing gas to the substrate for a first time duration; (c) adjusting the temperature of the substrate to a second temperature after performing (b); and (d) forming a second molybdenum-containing film on the first molybdenum-containing film by performing: (d1) supplying the molybdenum-containing gas to the substrate; and (d2) supplying the reducing gas to the substrate for a second time duration.
    Type: Application
    Filed: March 20, 2023
    Publication date: July 20, 2023
    Inventors: Koei KURIBAYASHI, Norikazu MIZUNO, Arito OGAWA
  • Patent number: 11705325
    Abstract: Provided is processing of a substrate including: forming film on substrate by performing cycle, multiple times, including non-simultaneously performing: (a) supplying precursor gas and inert gas to the substrate; and (b) supplying reaction gas to the substrate. In (a), at least one of the precursor and inert gas stored in first tank is supplied to the substrate, and at least one of the precursor and inert gas stored in second tank is supplied to the substrate. A concentration of the precursor gas in the first tank differs from that in the second tank. Further, in (a), the at least one of the precursor and inert gas is supplied from the first tank to the substrate, and the at least one of the precursor and inert gas is supplied from the second tank to the substrate to suppress multiple adsorption of molecules constituting the precursor gas on the substrate's surface.
    Type: Grant
    Filed: November 8, 2022
    Date of Patent: July 18, 2023
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Masayuki Asai, Tomoki Imamura, Kazuyuki Okuda, Yasuhiro Inokuchi, Norikazu Mizuno
  • Publication number: 20230091654
    Abstract: There is provided a technique that includes: (a) supplying a metal element-containing gas to a substrate accommodated in a process vessel; (b) supplying a reducing gas to the substrate; (c) performing (a) and (b) a predetermined number of times to form a film containing a metal element on the substrate; (d) supplying a modifying gas to the film to form a layer including an element contained in the modifying gas on a surface of the film after (c); and (e) creating a rare gas atmosphere in the process vessel and in a transfer chamber adjacent to the process vessel and carrying the substrate out of the process vessel and into the transfer chamber after (d).
    Type: Application
    Filed: September 16, 2022
    Publication date: March 23, 2023
    Applicant: Kokusai Electric Corporation
    Inventors: Koei KURIBAYASHI, Arito OGAWA, Norikazu MIZUNO
  • Publication number: 20230070910
    Abstract: Provided is processing of a substrate including: forming film on substrate by performing cycle, multiple times, including non-simultaneously performing: (a) supplying precursor gas and inert gas to the substrate; and (b) supplying reaction gas to the substrate. In (a), at least one of the precursor and inert gas stored in first tank is supplied to the substrate, and at least one of the precursor and inert gas stored in second tank is supplied to the substrate. A concentration of the precursor gas in the first tank differs from that in the second tank. Further, in (a), the at least one of the precursor and inert gas is supplied from the first tank to the substrate, and the at least one of the precursor and inert gas is supplied from the second tank to the substrate to suppress multiple adsorption of molecules constituting the precursor gas on the substrate's surface.
    Type: Application
    Filed: November 8, 2022
    Publication date: March 9, 2023
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Masayuki ASAI, Tomoki IMAMURA, Kazuyuki OKUDA, Yasuhiro INOKUCHI, Norikazu MIZUNO
  • Patent number: 11527401
    Abstract: There is provided technique including: forming film on substrate by performing cycle, predetermined number of times, including non-simultaneously performing: (a) supplying precursor gas and inert gas to the substrate; and (b) supplying reaction gas to the substrate, wherein in (a), at least one selected from the group of the precursor gas and the inert gas stored in first tank is supplied to the substrate, and at least one selected from the group of the precursor gas and the inert gas stored in second tank is supplied to the substrate, and concentration of the precursor gas in the first tank while at least one selected from the group of the precursor gas and the inert gas is stored in the first tank differs from that in the second tank while at least one selected from the group of the precursor gas and the inert gas is stored in the second tank.
    Type: Grant
    Filed: May 15, 2020
    Date of Patent: December 13, 2022
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Masayuki Asai, Tomoki Imamura, Kazuyuki Okuda, Yasuhiro Inokuchi, Norikazu Mizuno
  • Publication number: 20220208557
    Abstract: A film having film continuity can be formed. There is provided a technique including: preparing a substrate having a metal-containing film formed on a surface thereof; and slimming the metal-containing film by pulse-supplying a halogen-containing gas to the substrate.
    Type: Application
    Filed: March 18, 2022
    Publication date: June 30, 2022
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Arito OGAWA, Norikazu MIZUNO, Atsuhiko ASHITANI, Atsuro SEINO, Kota KOWA
  • Publication number: 20220093392
    Abstract: Described herein is a technique capable of forming a flat film. According to one or more embodiments of the present disclosure, there is provided a technique that includes: (a) forming a first layer on a substrate by performing a first layer forming cycle once or more, wherein the first layer forming cycle includes: (a1) supplying a first element-containing gas to the substrate in a process chamber; and (a2) supplying a first reducing gas to the substrate a plurality of times, and wherein (a1) and (a2) are sequentially performed; and (b) forming a second layer on the first layer by performing a second layer forming cycle once or more after (a), wherein the second layer forming cycle includes: (b1) supplying a second element-containing gas to the substrate; and (b2) supplying a second reducing gas to the substrate, and wherein (b1) and (b2) are sequentially performed.
    Type: Application
    Filed: September 17, 2021
    Publication date: March 24, 2022
    Applicant: Kokusai Electric Corporation
    Inventors: Takuya JODA, Arito OGAWA, Norikazu MIZUNO, Shogo HAYASAKA, Koei KURIBAYASHI
  • Publication number: 20200365388
    Abstract: There is provided technique including: forming film on substrate by performing cycle, predetermined number of times, including non-simultaneously performing: (a) supplying precursor gas and inert gas to the substrate; and (b) supplying reaction gas to the substrate, wherein in (a), at least one selected from the group of the precursor gas and the inert gas stored in first tank is supplied to the substrate, and at least one selected from the group of the precursor gas and the inert gas stored in second tank is supplied to the substrate, and concentration of the precursor gas in the first tank while at least one selected from the group of the precursor gas and the inert gas is stored in the first tank differs from that in the second tank while at least one selected from the group of the precursor gas and the inert gas is stored in the second tank
    Type: Application
    Filed: May 15, 2020
    Publication date: November 19, 2020
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Masayuki ASAI, Tomoki IMAMURA, Kazuyuki OKUDA, Yasuhiro INOKUCHI, Norikazu MIZUNO
  • Patent number: 9548198
    Abstract: A method of manufacturing a semiconductor device including forming a thin film containing silicon, oxygen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding, and a first catalytic gas to the substrate; and supplying an oxidizing gas and a second catalytic gas to the substrate.
    Type: Grant
    Filed: March 18, 2014
    Date of Patent: January 17, 2017
    Assignees: HITACHI KOKUSAI ELECTRIC INC., L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE
    Inventors: Yoshiro Hirose, Norikazu Mizuno, Kazutaka Yanagita, Shingo Okubo
  • Patent number: 9396929
    Abstract: Provided are: forming a thin film made of a specific element alone on a substrate by performing a specific number of times a cycle of: supplying a first source to the substrate, the first source containing the specific element and a halogen-group; and supplying a second source to the substrate, the second source containing the specific element and an amino-group, and having amino-group-containing ligands whose number is two or less in its composition formula and not more than the number of halogen-group-containing ligands in the composition formula of the first source.
    Type: Grant
    Filed: September 9, 2013
    Date of Patent: July 19, 2016
    Assignees: HITACHI KOKUSAI ELECTRIC INC., L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE
    Inventors: Yoshiro Hirose, Norikazu Mizuno, Kazutaka Yanagita, Katsuko Higashino
  • Patent number: 9343290
    Abstract: A method of manufacturing a semiconductor device includes forming an oxide film on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas to the substrate; and supplying an ozone gas to the substrate. In the act of supplying the precursor gas, the precursor gas is supplied to the substrate in a state where a catalytic gas is not supplied to the substrate, and in the act of supplying the ozone gas, the ozone gas is supplied to the substrate in a state where an amine-based catalytic gas is supplied to the substrate.
    Type: Grant
    Filed: March 19, 2014
    Date of Patent: May 17, 2016
    Assignees: HITACHI KOKUSAI ELECTRIC, INC., L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE
    Inventors: Yoshiro Hirose, Norikazu Mizuno, Kazutaka Yanagita, Shingo Okubo
  • Patent number: 9334567
    Abstract: There is provided a method for manufacturing a semiconductor device, including forming a film on a substrate by performing a cycle one or more times. The cycle includes forming a first layer containing silicon, nitrogen, and carbon by supplying a first silane-based source having a halogen-based ligand to the substrate and supplying a second silane-based source having amino groups to the substrate. The cycle also includes forming a second layer by modifying the first layer by performing supplying a reactive gas different from each of the sources, to the substrate.
    Type: Grant
    Filed: March 25, 2015
    Date of Patent: May 10, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshiro Hirose, Kenji Kanayama, Norikazu Mizuno, Yushin Takasawa, Yosuke Ota
  • Publication number: 20160111466
    Abstract: An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes (a) forming a lower layer oxide film on a lens formed on a substrate using a first processing source containing a first element, a second processing source containing a second element, an oxidizing source and a catalyst, the lower layer oxide film having a refractive index greater than that of air and less than that of the lens; and (b) forming an upper layer oxide film on the lower layer oxide film using the first processing source, the oxidizing source and the catalyst, the upper layer oxide film having a refractive index greater than that of the air and less than that of the lower layer oxide film.
    Type: Application
    Filed: December 30, 2015
    Publication date: April 21, 2016
    Applicant: HITACHI KOKUSAI ELECTRIC INC
    Inventors: Norikazu MIZUNO, Tomohide KATO, Takaaki NODA
  • Patent number: 9263251
    Abstract: An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes forming a metal-containing oxide film on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a metal-containing source to the substrate; (b) supplying an oxidizing source to the substrate; and (c) supplying a catalyst to the substrate.
    Type: Grant
    Filed: April 7, 2015
    Date of Patent: February 16, 2016
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Norikazu Mizuno, Tomohide Kato, Takaaki Noda
  • Patent number: 9217199
    Abstract: There is provided a substrate processing apparatus, including a processing chamber configured to house a substrate, a first source supply system configured to supply a chlorosilane-based source to the substrate in the processing chamber, a second source supply system configured to supply an aminosilane-based source to the substrate in the processing chamber and a reactive gas supply system configured to supply a reactive gas different from each of the sources, to the substrate in the processing chamber. The substrate processing apparatus further includes a controller configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that a process of forming an insulating film on the substrate is performed by an alternating process.
    Type: Grant
    Filed: March 25, 2015
    Date of Patent: December 22, 2015
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshiro Hirose, Kenji Kanayama, Norikazu Mizuno, Yushin Takasawa, Yosuke Ota
  • Publication number: 20150259795
    Abstract: There is provided a substrate processing apparatus, including a processing chamber configured to house a substrate, a first source supply system configured to supply a chlorosilane-based source to the substrate in the processing chamber, a second source supply system configured to supply an aminosilane-based source to the substrate in the processing chamber and a reactive gas supply system configured to supply a reactive gas different from each of the sources, to the substrate in the processing chamber. The substrate processing apparatus further includes a controller configured to control the first source supply system, the second source supply system, and the reactive gas supply system, so that a process of forming an insulating film on the substrate is performed by an alternating process.
    Type: Application
    Filed: March 25, 2015
    Publication date: September 17, 2015
    Inventors: Yoshiro HIROSE, Kenji KANAYAMA, Norikazu MIZUNO, Yushin TAKASAWA, Yosuke OTA
  • Patent number: 9123531
    Abstract: An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes forming a metal-containing oxide film on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a metal-containing source to the substrate; (b) supplying an oxidizing source to the substrate; and (c) supplying a catalyst to the substrate.
    Type: Grant
    Filed: April 9, 2014
    Date of Patent: September 1, 2015
    Assignee: Hitachi Kokusai Electric Inc.
    Inventors: Norikazu Mizuno, Tomohide Kato, Takaaki Noda
  • Publication number: 20150214025
    Abstract: An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes forming a metal-containing oxide film on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a metal-containing source to the substrate; (b) supplying an oxidizing source to the substrate; and (c) supplying a catalyst to the substrate.
    Type: Application
    Filed: April 7, 2015
    Publication date: July 30, 2015
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Norikazu MIZUNO, Tomohide KATO, Takaaki NODA
  • Publication number: 20150200092
    Abstract: There is provided a method for manufacturing a semiconductor device, including forming a film on a substrate by performing a cycle one or more times. The cycle includes forming a first layer containing silicon, nitrogen, and carbon by supplying a first silane-based source having a halogen-based ligand to the substrate and supplying a second silane-based source having amino groups to the substrate. The cycle also includes forming a second layer by modifying the first layer by performing supplying a reactive gas different from each of the sources, to the substrate.
    Type: Application
    Filed: March 25, 2015
    Publication date: July 16, 2015
    Inventors: Yoshiro HIROSE, Kenji KANAYAMA, Norikazu MIZUNO, Yushin TAKASAWA, Yosuke OTA