Patents by Inventor Noriko Bota
Noriko Bota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8471325Abstract: According to one embodiment, a nonvolatile memory device includes a substrate, a first electrode, a second electrode, a third electrode, a first memory portion and a second memory portion. The first electrode extends in a first direction and is provided on the substrate. The second electrode extends in a second direction crossing the first direction and is provided on the first electrode. The third electrode extends in a third direction crossing the second direction and is provided on the second electrode. The first memory portion is provided between the first and the second electrodes and has a first oxygen composition ratio and a first layer thickness. The second memory portion is provided between the second and the third electrodes and has at least one of a second oxygen composition ratio different from the first oxygen composition ratio and a second layer thickness different from the first layer thickness.Type: GrantFiled: September 20, 2010Date of Patent: June 25, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Hiroyuki Fukumizu, Noriko Bota
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Patent number: 8421051Abstract: According to one embodiment, a resistance-change memory includes a variable resistance element having a laminated structure in which a first electrode, a resistance-change film and a second electrode are laminated, and set to a low-resistance state and a high-resistance state according to stored data, an insulating film provided on a side surface of the variable resistance element, and a fixed resistance element provided on a side surface of the insulating film, and includes a conductive film, the fixed resistance element being connected in parallel with the variable resistance element.Type: GrantFiled: July 27, 2010Date of Patent: April 16, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Mitsuru Sato, Kohichi Kubo, Chikayoshi Kamata, Noriko Bota
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Patent number: 8391045Abstract: An information recording/reproducing device includes a first electrode layer, a second electrode layer, a recording layer as a variable resistance between the first and second electrode layer, and a circuit which supplies a voltage to the recording layer to change a resistance of the recording layer. Each of the first and second electrode layers is comprised of IV or III-V semiconductor doped with p-type carrier or n-type carrier.Type: GrantFiled: September 21, 2009Date of Patent: March 5, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Kohichi Kubo, Hirofumi Inoue, Mitsuru Sato, Chikayoshi Kamata, Shinya Aoki, Noriko Bota
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Patent number: 8274816Abstract: According to one embodiment, a nonvolatile memory device includes a memory layer and a driver section. The memory layer has a first state having a first resistance under application of a first voltage, a second state having a second resistance higher than the first resistance under application of a second voltage higher than the first voltage, and a third state having a third resistance between the first resistance and the second resistance under application of a third voltage between the first voltage and the second voltage. The driver section is configured to apply at least one of the first voltage, the second voltage and the third voltage to the memory layer to record information in the memory layer.Type: GrantFiled: February 28, 2011Date of Patent: September 25, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Noriko Bota, Yasuhiro Nojiri, Hiroyuki Fukumizu, Takuya Konno, Kazuhito Nishitani
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Publication number: 20110149638Abstract: According to one embodiment, a nonvolatile memory device includes a memory layer and a driver section. The memory layer has a first state having a first resistance under application of a first voltage, a second state having a second resistance higher than the first resistance under application of a second voltage higher than the first voltage, and a third state having a third resistance between the first resistance and the second resistance under application of a third voltage between the first voltage and the second voltage. The driver section is configured to apply at least one of the first voltage, the second voltage and the third voltage to the memory layer to record information in the memory layer.Type: ApplicationFiled: February 28, 2011Publication date: June 23, 2011Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Noriko BOTA, Yasuhiro Nojiri, Hiroyuki Fukumizu, Takuya Konno, Kazuhito Nishitani
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Publication number: 20110037046Abstract: According to one embodiment, a resistance-change memory includes a laminated structure in which a lower electrode, an insulating film and an upper electrode are stacked, and a resistance-change film provided on a side surface of the laminated structure, and configured to store data in accordance with an electric resistance change.Type: ApplicationFiled: July 12, 2010Publication date: February 17, 2011Inventors: Mitsuru SATO, Kohichi Kubo, Chikayoshi Kamata, Noriko Bota
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Publication number: 20110031463Abstract: According to one embodiment, a resistance-change memory includes a variable resistance element having a laminated structure in which a first electrode, a resistance-change film and a second electrode are laminated, and set to a low-resistance state and a high-resistance state according to stored data, an insulating film provided on a side surface of the variable resistance element, and a fixed resistance element provided on a side surface of the insulating film, and includes a conductive film, the fixed resistance element being connected in parallel with the variable resistance element.Type: ApplicationFiled: July 27, 2010Publication date: February 10, 2011Inventors: Mitsuru SATO, Kohichi Kubo, Chikayoshi Kamata, Noriko Bota
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Publication number: 20110031467Abstract: An information recording and reproducing apparatus according to an embodiment has a memory cell including a recording layer operative to change in a reversible manner between a first state having a certain resistance value upon application of a voltage pulse and a second state having a resistance value higher than that of the first state. The recording layer includes a first compound layer represented by a composition formula of AxMyX4 (0.1?x?1.2, 2<y?2.9). The A is at least one element selected from a group of Mn (manganese), Fe (iron), Co (cobalt), Ni (nickel), and Cu (copper). The M is at least one element selected from a group of Al (aluminum), Ga (gallium), Ti (titanium), Ge (germanium), and Sn (tin). The X is O (oxygen).Type: ApplicationFiled: August 3, 2010Publication date: February 10, 2011Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Koichi KUBO, Mitsuru Sato, Chikayoshi Kamata, Noriko Bota
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Publication number: 20110031468Abstract: According to one embodiment, a nonvolatile memory device includes a substrate, a first electrode, a second electrode, a third electrode, a first memory portion and a second memory portion. The first electrode extends in a first direction and is provided on the substrate. The second electrode extends in a second direction crossing the first direction and is provided on the first electrode. The third electrode extends in a third direction crossing the second direction and is provided on the second electrode. The first memory portion is provided between the first and the second electrodes and has a first oxygen composition ratio and a first layer thickness. The second memory portion is provided between the second and the third electrodes and has at least one of a second oxygen composition ratio different from the first oxygen composition ratio and a second layer thickness different from the first layer thickness.Type: ApplicationFiled: September 20, 2010Publication date: February 10, 2011Applicant: Kabushiki Kaisha ToshibaInventors: Hiroyuki FUKUMIZU, Noriko Bota
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Publication number: 20100238703Abstract: An information recording/reproducing device includes a first electrode layer, a second electrode layer, a recording layer as a variable resistance between the first and second electrode layer, and a circuit which supplies a voltage to the recording layer to change a resistance of the recording layer. Each of the first and second electrode layers is comprised of IV or III-V semiconductor doped with p-type carrier or n-type carrier.Type: ApplicationFiled: September 21, 2009Publication date: September 23, 2010Inventors: Kohichi KUBO, Hirofumi Inoue, Mitsuru Sato, Chikayoshi Kamata, Shinya Aoki, Noriko Bota