Abstract: A method for analyzing a minute quantity of a material included in a different material is performed in short extraction treatment without taking a long time and the minute content is rapidly analyzed. The method of analyzing a minute content includes mounting on a sample table a sample piece of a material having a minute content of a different material to be analyzed; dropping onto the sample table a solvent for extracting the minute content from the sample piece, so that the solvent is disposed between the sample table and the sample piece; maintaining at room temperature the solvent between the sample table and the sample piece, and, with the solvent maintained between the sample table and the sample piece, extracting the material of the minute content from the sample piece; and analyzing the content extracted from the sample piece.

Abstract: A sample preparation for analyzing a minute quantity of a content included in a material is performed by short-time extraction treatment without long-time extraction treatment, and the minute quantity of the content in the material is rapidly analyzed. The method of analyzing a minute quantity of a content includes mounting on a sample table a sample piece of a material to be analyzed; dropping onto the sample table the solvent for extracting the content from the sample piece, and injecting the solvent into a gap between the sample table and the sample piece; maintaining at room temperature the solvent injected into the gap between the sample table and the sample piece, and, with the solvent maintained in the gap between the sample table and the sample piece, extracting the content from the sample piece; and analyzing the content extracted from the sample piece.

Abstract: A method for recovering impurities on a surface of a silicon wafer includes a first step of using a pretreatment solution to decompose an oxide film, a nitride film on an oxynitridation film formed at a peripheral portion on a surface of a silicon wafer and to remove impurities on the peripheral portion and a second step of recovering impurities on the surface of the wafer expect for the peripheral portion.