Patents by Inventor Noriko Ishimaru
Noriko Ishimaru has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10522076Abstract: A display system in which the luminance of light-emitting elements in a light-emitting device is adjusted based on information on an environment. A sensor obtains information on an environment as an electrical signal. A CPU converts, based on comparison data set in advance, the information signal into a correction signal for correcting the luminance of EL elements. Upon receiving this correction signal, a voltage changer applies a predetermined corrected potential to the EL elements. Thus, this display system enables control of the luminance of the EL elements.Type: GrantFiled: June 7, 2016Date of Patent: December 31, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun Koyama, Noriko Ishimaru
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Patent number: 10467961Abstract: A display system in which the luminance of light-emitting elements in a light-emitting device is adjusted based on information on an environment. A sensor obtains information on an environment as an electrical signal. A CPU converts, based on comparison data set in advance, the information signal into a correction signal for correcting the luminance of EL elements. Upon receiving this correction signal, a voltage changer applies a predetermined corrected potential to the EL elements. Thus, this display system enables control of the luminance of the EL elements.Type: GrantFiled: January 3, 2019Date of Patent: November 5, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun Koyama, Noriko Ishimaru
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Publication number: 20190156742Abstract: A display system in which the luminance of light-emitting elements in a light-emitting device is adjusted based on information on an environment. A sensor obtains information on an environment as an electrical signal. A CPU converts, based on comparison data set in advance, the information signal into a correction signal for correcting the luminance of EL elements. Upon receiving this correction signal, a voltage changer applies a predetermined corrected potential to the EL elements. Thus, this display system enables control of the luminance of the EL elements.Type: ApplicationFiled: January 3, 2019Publication date: May 23, 2019Inventors: Shunpei YAMAZAKI, Jun Koyama, Noriko Ishimaru
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Publication number: 20160365029Abstract: A display system in which the luminance of light-emitting elements in a light-emitting device is adjusted based on information on an environment. A sensor obtains information on an environment as an electrical signal. A CPU converts, based on comparison data set in advance, the information signal into a correction signal for correcting the luminance of EL elements. Upon receiving this correction signal, a voltage changer applies a predetermined corrected potential to the EL elements. Thus, this display system enables control of the luminance of the EL elements.Type: ApplicationFiled: June 7, 2016Publication date: December 15, 2016Inventors: Shunpei YAMAZAKI, Jun Koyama, Noriko Ishimaru
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Patent number: 9368089Abstract: A display system in which the luminance of light-emitting elements in a light-emitting device is adjusted based on information on an environment. A sensor obtains information on an environment as an electrical signal. A CPU converts, based on comparison data set in advance, the information signal into a correction signal for correcting the luminance of EL elements. Upon receiving this correction signal, a voltage changer applies a predetermined corrected potential to the EL elements. Thus, this display system enables control of the luminance of the EL elements.Type: GrantFiled: July 16, 2015Date of Patent: June 14, 2016Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Jun Koyama, Noriko Ishimaru
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Patent number: 8754577Abstract: An EL display device capable of reducing an average film resistance of an anode in an EL device as well as displaying an image with high definition, and electrical equipment including such an EL display device are provided. A light-shielding metal film (109) is provided on an anode (108) so as to conceal gaps between the pixels. Thus, an average film resistance of the anode (108) in the EL device is reduced. Furthermore, light leakage from the gaps between the pixels can be prevented, resulting in an image display with high definition.Type: GrantFiled: May 10, 2011Date of Patent: June 17, 2014Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takeshi Nishi, Noriko Ishimaru
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Publication number: 20110210661Abstract: An EL display device capable of reducing an average film resistance of an anode in an EL device as well as displaying an image with high definition, and electrical equipment including such an EL display device are provided. A light-shielding metal film 109 is provided on an anode 108 so as to conceal gaps between the pixels. Thus, an average film resistance of the anode 108 in the EL device is reduced. Furthermore, light leakage from the gaps between the pixels can be prevented, resulting in an image display with high definition.Type: ApplicationFiled: May 10, 2011Publication date: September 1, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Takeshi Nishi, Noriko Ishimaru
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Patent number: 7564054Abstract: Measure of forming an EL layer by selectively depositing through evaporation a material for forming the EL layer at a desired location is provided. When a material for forming an EL layer is deposited, a mask (113) is provided between a sample boat (111) and a substrate (110). By applying voltage to the mask (113), the direction of progress of the material for forming the EL layer is controlled to be selectively deposited at a desired location.Type: GrantFiled: March 2, 2006Date of Patent: July 21, 2009Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masaaki Hiroki, Noriko Ishimaru
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Patent number: 7372114Abstract: A silicon oxynitride film is manufactured using SiH4, N2O and H2 by plasma CVD, and it is applied to the gate insulating film (1004 in FIG. 1A) of a TFT. The characteristics of the silicon oxynitride film are controlled chiefly by changing the flow rates of N2O and H2. A hydrogen concentration and a nitrogen concentration in the film can be increased by the increase of the flow rate of H2. Besides, the hydrogen concentration and the nitrogen concentration in the film can be decreased to heighten an oxygen concentration by the increase of the flow rate of N2O. The gate insulating film ensures the stability and reliability of the characteristics of the TFT, such as the threshold voltage (Vth) and sub-threshold constant (S value) thereof.Type: GrantFiled: October 10, 2006Date of Patent: May 13, 2008Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsunori Sakama, Noriko Ishimaru, Taketomi Asami, Shunpei Yamazaki
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Publication number: 20070029626Abstract: A silicon oxynitride film is manufactured using SiH4, N2O and H2 by plasma CVD, and it is applied to the gate insulating film (1004 in FIG. 1A) of a TFT. The characteristics of the silicon oxynitride film are controlled chiefly by changing the flow rates of N2O and H2. A hydrogen concentration and a nitrogen concentration in the film can be increased by the increase of the flow rate of H2. Besides, the hydrogen concentration and the nitrogen concentration in the film can be decreased to heighten an oxygen concentration by the increase of the flow rate of N2O. The gate insulating film ensures the stability and reliability of the characteristics of the TFT, such as the threshold voltage (Vth) and sub-threshold constant (S value) thereof.Type: ApplicationFiled: October 10, 2006Publication date: February 8, 2007Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsunori Sakama, Noriko Ishimaru, Taketomi Asami, Shunpei Yamazaki
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Patent number: 7166899Abstract: A silicon oxynitride film is manufactured using SiH4, N2O and H2 by plasma CVD, and it is applied to the gate insulating film (1004 in FIG. 1A) of a TFT. The characteristics of the silicon oxynitride film are controlled chiefly by changing the flow rates of N2O and H2. A hydrogen concentration and a nitrogen concentration in the film can be increased by the increase of the flow rate of H2. Besides, the hydrogen concentration and the nitrogen concentration in the film can be decreased, to heighten an oxygen concentration by the increase of the flow rate of N2O. The gate insulating film ensures the stability and reliability of the characteristics of the TFT, such as the threshold voltage (Vth) and sub-threshold constant (S value) thereof.Type: GrantFiled: July 15, 2005Date of Patent: January 23, 2007Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsunori Sakama, Noriko Ishimaru, Taketomi Asami, Shunpei Yamazaki
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Publication number: 20060286889Abstract: An EL display device capable of reducing an average film resistance of an anode in an EL device as well as displaying an image with high definition, and electrical equipment including such an EL display device are provided. A light-shielding metal film 109 is provided on an anode 108 so as to conceal gaps between the pixels. Thus, an average film resistance of the anode 108 in the EL device is reduced. Furthermore, light leakage from the gaps between the pixels can be prevented, resulting in an image display with high definition.Type: ApplicationFiled: August 24, 2006Publication date: December 21, 2006Inventors: Takeshi Nishi, Noriko Ishimaru
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Publication number: 20060197080Abstract: Measure of forming an EL layer by selectively depositing through evaporation a material for forming the EL layer at a desired location is provided. When a material for forming an EL layer is deposited, a mask (113) is provided between a sample boat (111) and a substrate (110). By applying voltage to the mask (113), the direction of progress of the material for forming the EL layer is controlled to be selectively deposited at a desired location.Type: ApplicationFiled: March 2, 2006Publication date: September 7, 2006Inventors: Shunpei Yamazaki, Masaaki Hiroki, Noriko Ishimaru
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Patent number: 7022535Abstract: Measure of forming an EL layer by selectively depositing through evaporation a material for forming the EL layer at a desired location is provided. When a material for forming an EL layer is deposited, a mask (113) is provided between a sample boat (111) and a substrate (110). By applying voltage to the mask (113), the direction of progress of the material for forming the EL layer is controlled to be selectively deposited at a desired location.Type: GrantFiled: March 2, 2004Date of Patent: April 4, 2006Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masaaki Hiroki, Noriko Ishimaru
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Publication number: 20050263835Abstract: A silicon oxynitride film is manufactured using SiH4, N2O and H2 by plasma CVD, and it is applied to the gate insulating film (1004 in FIG. 1A) of a TFT. The characteristics of the silicon oxynitride film are controlled chiefly by changing the flow rates of N2O and H2. A hydrogen concentration and a nitrogen concentration in the film can be increased by the increase of the flow rate of H2. Besides, the hydrogen concentration and the nitrogen concentration in the film can be decreased, to heighten an oxygen concentration by the increase of the flow rate of N2O. The gate insulating film ensures the stability and reliability of the characteristics of the TFT, such as the threshold voltage (Vth) and sub-threshold constant (S value) thereof.Type: ApplicationFiled: July 15, 2005Publication date: December 1, 2005Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsunori Sakama, Noriko Ishimaru, Taketomi Asami, Shunpei Yamazaki
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Patent number: 6919282Abstract: A silicon oxynitride film is manufactured using SiH4, N2O and H2 by plasma CVD, and it is applied to the gate insulating film (1004 in FIG. 1A) of a TFT. The characteristics of the silicon oxynitride film are controlled chiefly by changing the flow rates of N2O and H2. A hydrogen concentration and a nitrogen concentration in the film can be increased by the increase of the flow rate of H2. Besides, the hydrogen concentration and the nitrogen concentration in the film can be decreased to heighten an oxygen concentration by the increase of the flow rate of N2O. The gate insulating film ensures the stability and reliability of the characteristics of the TFT, such as the threshold voltage (Vth) and sub-threshold constant (S value) thereof.Type: GrantFiled: January 8, 2003Date of Patent: July 19, 2005Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsunori Sakama, Noriko Ishimaru, Taketomi Asami, Shunpei Yamazaki
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Publication number: 20040238820Abstract: An objective is to provide an insulating film suitable for a semiconductor device, typically a TFT, and a method of manufacturing the insulating film. A semiconductor device using this type of insulating film for a gate insulating film, a base film, and a protective insulating film or an interlayer insulating film, and a method of its manufacture, are provided. The insulating film is manufactured from a hydrogenated silicon oxynitride film by plasma CVD using SiH4, N2O, and H2 as raw material gasses. It has a composition in which the oxygen concentration is set from 55 to 70 atomic %, the nitrogen concentration is set from 0.1 to 6 atomic %, preferably between 0.1 and 2 atomic %, and the hydrogen concentration is set from 0.1 to 3 atomic %. In order to make a film with this composition, the substrate temperature is set from 350 to 500° C., preferably between 400 and 450° C., and the electric discharge power density is set between 0.1 and 1 W/cm2.Type: ApplicationFiled: September 24, 2003Publication date: December 2, 2004Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsunori Sakama, Taketomi Asami, Noriko Ishimaru, Shunpei Yamazaki
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Publication number: 20040171182Abstract: Measure of forming an EL layer by selectively depositing through evaporation a material for forming the EL layer at a desired location is provided. When a material for forming an EL layer is deposited, a mask (113) is provided between a sample boat (111) and a substrate (110). By applying voltage to the mask (113), the direction of progress of the material for forming the EL layer is controlled to be selectively deposited at a desired location.Type: ApplicationFiled: March 2, 2004Publication date: September 2, 2004Inventors: Shunpei Yamazaki, Masaaki Hiroki, Noriko Ishimaru
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Patent number: 6730992Abstract: To a provide a method of forming a layered film of a silicon nitride film and a silicon oxide film on a glass substrate in a short time without requiring a plurality of film deposition chambers. In a thin film transistor, a layered film including a silicon nitride oxide film (12) is formed between a semiconductor layer (13) and a substrate (11) using the same chamber. The silicon nitride oxide film has a continuously changing composition ration of nitrogen or oxygen. An electric characteristic of the TFT is thus improved.Type: GrantFiled: February 19, 2003Date of Patent: May 4, 2004Assignees: Semiconductor Energy Laboratory Co., Ltd., Sharp Kabushiki KaishaInventors: Mitsunori Sakama, Noriko Ishimaru, Masahiko Miwa, Mitinori Iwai
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Patent number: 6699739Abstract: Measure of forming an EL layer by selectively depositing through evaporation a material for forming the EL layer at a desired location is provided. When a material for forming an EL layer is deposited, a mask (113) is provided between a sample boat (111) and a substrate (110). By applying voltage to the mask (113), the direction of progress of the material for forming the EL layer is controlled to be selectively deposited at a desired location.Type: GrantFiled: March 2, 2001Date of Patent: March 2, 2004Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masaaki Hiroki, Noriko Ishimaru