Patents by Inventor Noriko Oshiro

Noriko Oshiro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Installation structure of exhaust gas sensor
    Patent number: 11149619
    Abstract: An installation structure of an exhaust gas sensor includes: two exhaust pipes on a downstream side of a multi-cylinder engine; a collecting pipe configured to collect the two exhaust pipes; and an exhaust gas sensor installed in the collecting pipe. Outlets of the two exhaust pipes are connected to the collecting pipe so as to be adjacent to each other. In the collecting pipe, the exhaust gas sensor is installed at a position away from the outlets of the two exhaust pipes in a direction orthogonal to a direction in which the outlets of the two exhaust pipes are adjacent to each other in a sectional view.
    Type: Grant
    Filed: July 6, 2020
    Date of Patent: October 19, 2021
    Assignee: SUZUKI MOTOR CORPORATION
    Inventors: Takayoshi Muramatsu, Noriko Oshiro
  • INSTALLATION STRUCTURE OF EXHAUST GAS SENSOR
    Publication number: 20210010408
    Abstract: An installation structure of an exhaust gas sensor includes: two exhaust pipes on a downstream side of a multi-cylinder engine; a collecting pipe configured to collect the two exhaust pipes; and an exhaust gas sensor installed in the collecting pipe. Outlets of the two exhaust pipes are connected to the collecting pipe so as to be adjacent to each other. In the collecting pipe, the exhaust gas sensor is installed at a position away from the outlets of the two exhaust pipes in a direction orthogonal to a direction in which the outlets of the two exhaust pipes are adjacent to each other in a sectional view.
    Type: Application
    Filed: July 6, 2020
    Publication date: January 14, 2021
    Applicant: SUZUKI MOTOR CORPORATION
    Inventors: Takayoshi MURAMATSU, Noriko OSHIRO
  • Selective etching silicon nitride
    Publication number: 20050159011
    Abstract: By providing a silicon containing precursor, such as methyl triethoxysilane, to a phosphoric etch bath, wafers containing nitride may be selectively etched without unduly impacting other silicon containing underlying layers.
    Type: Application
    Filed: January 21, 2004
    Publication date: July 21, 2005
    Inventors: Vani Thirumala, Nabil Mistkawi, Bruce Beattie, John O'Sullivan, Huiying Liu, Noriko Oshiro, Hokkin Choi, Loretta Cordrey