Patents by Inventor Noriko Ueno

Noriko Ueno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6567445
    Abstract: A semiconductor emission element is disclosed including a plurality of the laser oscillator formed on the opposite side of a base of a substrate. P-side electrodes are connected to the laser oscillator while extract electrodes having a function of radiation by increasing its thickness, are connected to the p-side electrodes. The extract electrodes cover two of the laser oscillators while covering the other two laser oscillators with insulating layers in between. As a result, thermal interference can be terminated while deterioration of the performance of the emitting portion by generation of heat can be suppressed even if the substrate is provided on the base with the opposite side of the emitting portion of the substrate facing the base.
    Type: Grant
    Filed: May 22, 2001
    Date of Patent: May 20, 2003
    Assignee: Sony Corporation
    Inventors: Hironobu Narui, Takehiro Taniguchi, Noriko Ueno, Nobukata Okano
  • Patent number: 6548317
    Abstract: The purpose of the invention is to provide a photoelectric conversion element enable to ensure the connection of the contact electrode easily and accurately. The plurality of the laser oscillator in which a semiconductor layer and the p-side electrode are laminated are formed on the same substrate. Each contact electrode formed on the base substrate through each opening of the insulating layer is electrically connected to each p-side electrode. Each opening corresponding to each laser oscillator placed side by side is formed in a staggered configuration in the alignment direction. Each contact electrode is extended in parallel with the alignment direction corresponding to each opening. Accordingly, the space between each opening and the space between each contact electrode which are placed side by side in the alignment direction are widened and the requirement for highly accurate position matching is eliminated.
    Type: Grant
    Filed: August 9, 2001
    Date of Patent: April 15, 2003
    Assignee: Sony Corporation
    Inventors: Takehiro Taniguchi, Hironobu Narui, Noriko Ueno, Nobukata Okano
  • Patent number: 6459714
    Abstract: It is an object to provide a semiconductor emission element which can promote radiation while being manufactured easily, and a method of manufacturing the same. In the semiconductor emission element of the invention, a plurality of the laser oscillator are formed on the opposite side of a base of a substrate which is supported by the base. P-sides electrodes are connected to the laser oscillator while extract electrodes having a function of radiation by thickening its thickness are connected to the p-side electrodes. The extract electrodes cover two of the laser oscillators while covering the other two laser oscillators with insulating layers in between. As a result, thermal interference can be terminated while deterioration of the performance of the emitting portion by generation of heat can be suppressed even if the substrate is provided on the base with the opposite side of the emitting portion of the substrate facing the base.
    Type: Grant
    Filed: June 3, 1999
    Date of Patent: October 1, 2002
    Assignee: Sony Corporation
    Inventors: Hironobu Narui, Takehiro Taniguchi, Noriko Ueno, Nobukata Okano
  • Patent number: 6404790
    Abstract: A stripe portion extending in an <011> crystal axis direction of a compound semiconductor substrate (1) in which a {100} crystalline surface is made a major surface is formed between stepped portions (41), a laser resonator is formed in the stripe portion, the width of the stripe portion at one end surface of the laser resonator is made broader in width compared with the central portion and another end surface of the laser resonator. Then, in accordance with the shape of the stripe portion, the stripe shape of an active layer of the laser resonator is made broader in width than the center portion and the other end surface, whereby a semiconductor laser of a narrow field pattern with a low threshold value is obtained.
    Type: Grant
    Filed: September 16, 1999
    Date of Patent: June 11, 2002
    Assignee: Sony Corporation
    Inventors: Hironobu Narui, Takehiro Taniguchi, Noriko Ueno, Nobukata Okano
  • Publication number: 20010049152
    Abstract: The purpose of the invention is to provide a photoelectric conversion element enable to ensure the connection of the contact electrode easily and accurately.
    Type: Application
    Filed: August 9, 2001
    Publication date: December 6, 2001
    Inventors: Takehiro Taniguchi, Hironobu Narui, Noriko Ueno, Nobukata Okano
  • Patent number: 6310381
    Abstract: The purpose of the invention is to provide a photoelectric conversion element enable to ensure the connection of the contact electrode easily and accurately. The plurality of the laser oscillator in which a semiconductor layer and the p-side electrode are laminated are formed on the same substrate. Each contact electrode formed on the base substrate through each opening of the insulating layer is electrically connected to each p-side electrode. Each opening corresponding to each laser oscillator placed side by side is formed in a staggered configuration in the alignment direction. Each contact electrode is extended in parallel with the alignment direction corresponding to each opening. Accordingly, the space between each opening and the space between each contact electrode which are placed side by side in the alignment direction are widened and the requirement for highly accurate position matching is eliminated.
    Type: Grant
    Filed: May 6, 1999
    Date of Patent: October 30, 2001
    Assignee: Sony Corporation
    Inventors: Takehiro Taniguchi, Hironobu Narui, Noriko Ueno, Nobukata Okano