Abstract: A method of making pattern data of a photomask pattern includes: the processes of adding, to each of first cells, information of the first cell higher than the first cell on the basis of a hierarchical structure; selecting, from the first cells included in one level of the hierarchical structure, the first cell identical to one of the first cells included in a level higher than the one level and the first cell placed inside two or more of the first cells included in a level immediately higher than the one level, and forming a cell group with the selected first cells; making pattern data of the first cells not included in the cell group in consideration of the optical proximity effect and forming a fourth cell group with second cells including the pattern data; and replacing the first cells with the corresponding second cells in input data.

Abstract: A method of performing an optical proximity effect correction to a first photomask pattern for a wiring of a semiconductor device for use in combination with a second photomask pattern for a via, the wiring including an end portion coupled to the via, the method being performed by a computer including a memory storing layout data of the first photomask pattern and the second photomask pattern, including extracting a pattern of layout data of the first photomask pattern for the wiring corresponding to the end portion of the wiring and layout data of the second photomask pattern for the via.

Abstract: A method of performing an optical proximity effect correction to a first photomask pattern for a wiring of a semiconductor device for use in combination with a second photomask pattern for a via, the wiring including an end portion coupled to the via, the method being performed by a computer including a memory storing layout data of the first photomask pattern and the second photomask pattern, including extracting a pattern of layout data of the first photomask pattern for the wiring corresponding to the end portion of the wiring and layout data of the second photomask pattern for the via.

Abstract: A method of making pattern data of a photomask pattern includes: the processes of adding, to each of first cells, information of the first cell higher than the first cell on the basis of a hierarchical structure; selecting, from the first cells included in one level of the hierarchical structure, the first cell identical to one of the first cells included in a level higher than the one level and the first cell placed inside two or more of the first cells included in a level immediately higher than the one level, and forming a cell group with the selected first cells; making pattern data of the first cells not included in the cell group in consideration of the optical proximity effect and forming a fourth cell group with second cells including the pattern data; and replacing the first cells with the corresponding second cells in input data.