Abstract: The present invention is for a transparent conductive film of nitrogen-containing indium tin oxide 5 nm to 100 &mgr;m thick formed on a substrate. The process for producing the transparent film includes exciting the surface of the substrate in a vacuum and depositing vaporized indium tin oxide on the surface of the substrate. The surface may be excited with irradiation with an ion beam. The indium tin oxide may be deposited through vacuum deposition, laser abrasion, ion plating, ion beam deposition, or chemical vapor deposition. Vapor deposition of indium tin oxide may be performed using a sintered product of indium oxide and tin oxide or with indium metal and tin metal.

Abstract: A bonding composition comprising a metal oxide melt comprising (a) CaO, (b) SiO.sub.2 and/or Al.sub.2 O.sub.3, and (c) a metal oxide selected from TiO.sub.2, ZrO.sub.2, Cr.sub.2 O.sub.3, HfO.sub.2, Nb.sub.2 O.sub.3 and Ta.sub.2 O.sub.5 is melt-bonded on the surface of a ceramic material, and the ceramic material is bonded to an adherent, if necessary through at least one layer selected from a plating layer, a solder layer, and a buffer layer. In this manner, a strong bonding can be very easily obtained.

Abstract: A bonding composition comprising a metal oxide melt comprising (a) CaO, (b) SiO.sub.2 and/or Al.sub.2 O.sub.3, and (c) a metal oxide selected from TiO.sub.2, ZrO.sub.2, Cr.sub.2 O.sub.3, HfO.sub.2, Nb.sub.2 O.sub.3 and Ta.sub.2 O.sub.5 is melt-bonded on the surface of a ceramic material, and the ceramic material is bonded to an adherend, if necessary through at least one layer selected from a plating layer, a solder layer, and a buffer layer. In this manner, a strong bonding can be very easily obtained.