Abstract: A process for producing the crystals of difructose dianhydride III (DFA III), namely a indigestible disaccharide where two fructose molecules are bonded to each other at positions 1, 2? and 2,3? (di-D-fructofuranose-1,2?:2,3?-dianhydride), where solutions containing DFA III are adjusted to and/or maintained at pH 5 or more, preferably pH 5 to 8, and more preferably 6 to 8. DFA III can be produced industrially without lowering the crystal yield even when the crystallization thereof is done in a recycling system; additionally by adjusting the total fructose content in mother solutions for (crude) crystallization to 5% or less per a solid content basis and adjusting the fructose content to 1% or less, DFA III can more effectively be produced.

Abstract: A process for producing the crystals of difructose dianhydride III (DFA III), namely a indigestible disaccharide where two fructose molecules are bonded to each other at positions 1,2? and 2,3? (di-D-fructofuranose-1,2?:2,3?-dianhydride), where solutions containing DFA III are adjusted to and/or maintained at pH 5 or more, preferably pH 5 to 8, and more preferably 6 to 8. DFA III can be produced industrially without lowering the crystal yield even when the crystallization thereof is done in a recycling system; additionally by adjusting the total fructose content in mother solutions for (crude) crystallization to 5% or less per a solid content basis and adjusting the fructose content to 1% or less, DFA III can more effectively be produced.

Abstract: The invention provides a process for producing the crystals of difructose dianhydride III (DFA III), namely a indigestible disaccharide where two fructose molecules are bonded to each other at positions 1,2? and 2,3? (di-D-fructofuranose-1,2?,2,3?-dianhydride), where solutions containing DFA III are adjusted to and/or maintained at pH 5 or more, preferably pH 5 to 8, and more preferably 6 to 8. In accordance with the invention, DFA III can be produced industrially without lowering the crystal yield even when the crystallization thereof is done in a recycling system; additionally by adjusting the total fructose content in mother solutions for (crude) crystallization to 5% or less per a solid content basis and adjusting the fructose content to 1% or less, DFA III can more effectively be produced.

Abstract: In the invention, highly pure crystals of difructose dianhydride III (di-D-fructofuranose-1,2?:2,3?-dianhydride; hereinafter referred to as DFA III) are produced by adding 5% or less of powdered active carbon to a DFA III containing purified solution containing DFA III of 90% or more purity at a concentration of R-Bx 10-60, preferably 40-55, and after stirring, applying the mixture to solid-liquid separation (filtration with diatomaceous, filtration through a membrane filter, ultrafiltration, or continuous centrifugal separation) and concentrating the separated liquid part, followed by immediate crystallization. In the process of the invention, DFA III crystals can be produced efficiently and industrially, and the resulting crystals can be used for various purposes in pharmaceuticals or food and drink since they have no smell. This is characteristics of the invention different from the prior art products.

Abstract: A contact structure in a semiconductor device includes a layer of dielectric material and a via formed through the dielectric material. The contact structure further includes a spacer formed on sidewalls of the via using atomic layer deposition (ALD) and a metal deposited in the via.

Abstract: The invention provides a process for producing the crystals of difructose dianhydride III (DFA III), namely a indigestible disaccharide where two fructose molecules are bonded to each other at positions 1,2? and 2,3?(di-D-fructofuranose-1,2?:2,3?-dianhydride), where solutions containing DFA III are adjusted to and/or maintained at pH 5 or more, preferably pH 5 to 8, and more preferably 6 to 8. In accordance with th invention, DFA III can be produced industrially without lowering the crystal yield even when the crystallization thereof is done in a recycling system; additionally by adjusting the total fructose content in mother solutions for (crude) crystallization to 5% or less per a solid content basis and adjusting the fructose content to 1% or less, DFA III can more effectively be produced.

Abstract: A contact structure in a semiconductor device includes a layer of dielectric material and a via formed through the dielectric material. The contact structure further includes a spacer formed on sidewalls of the via using atomic layer deposition (ALD) and a metal deposited in the via.

Abstract: In the invention, highly pure crystals of difructose dianhydride III (di-D-fructofuranose-1,2?:2,3 ?-dianhydride; hereinafter referred to as DFA III) are produced by adding 5% or less of powdered active carbon to a DFA III containing purified solution containing DFA III of 90% or more purity at a concentration of R-Bx 10-60, preferably 40-55, and after stirring, applying the mixture to solid-liquid separation (filtration with diatomaceous, filtration through a membrane filter, ultrafiltration, or continuous centrifugal separation) and concentrating the separated liquid part, followed by immediate crystallization. In the process of the invention, DFA III crystals can be produced efficiently and industrially, and the resulting crystals can be used for various purposes in pharmaceuticals or food and drink since they have no smell. This is characteristics of the invention different from the prior art products.

Abstract: A process of the formation of heteroepitaxy including heating a silicon substrate in gas ambience including one of a hydride of a IIIB group element and an organic substance of a IIIB group element, having the IIIB group element remain on the surface of the silicon substrate, and growing a GaAs film on a surface of the silicon substrate after the heat processing. Particles remaining on an inner wall or the like of a film forming apparatus are prevented from reaching the surface, and a IIIB group element remains on the surface after preprocessing. Such a GaAs film formed on the surface includes less unevenness and crystal defects.