Abstract: An analysis method includes acquiring target data collected at edges; determining first analysis target satisfying a first condition, and specifying a first detection position indicating a position at which the first analysis target is detected at the edges and a first detection time; calculating a correlation coefficient of the feature amount; specifying a first range of the first detection position and a second range of the first detection time of the analysis target for which the correlation coefficient satisfies a predetermined relationship; determining second analysis target satisfying a second condition, and specifying a second detection position and a second detection time; determining whether the analysis target in which the second detection position is included in the first range and the second detection time; and acquiring any one of the analysis target from the edges when it is determined that the analysis target is included.

Abstract: An analysis method includes acquiring target data collected at edges; determining first analysis target satisfying a first condition, and specifying a first detection position indicating a position at which the first analysis target is detected at the edges and a first detection time; calculating a correlation coefficient of the feature amount; specifying a first range of the first detection position and a second range of the first detection time of the analysis target for which the correlation coefficient satisfies a predetermined relationship; determining second analysis target satisfying a second condition, and specifying a second detection position and a second detection time; determining whether the analysis target in which the second detection position is included in the first range and the second detection time; and acquiring any one of the analysis target from the edges when it is determined that the analysis target is included.

Abstract: There is provided a sensor system capable of being used semi-permanently in a maintenance-free state without exchanging batteries as well as being installed in an already-existing manhole lid by a simple work on the spot, and having a measurement unit, a power source unit, and a communication unit, and installed in a manhole lid, wherein the power source unit includes a thermoelectric power generation module configured to generate electric power by a difference in temperature between a first heat transfer unit thermally connected to the manhole lid and a second heat transfer unit thermally connected to a heat radiating unit within a manhole, and the measurement unit and the communication unit are driven by electric power generated by the thermoelectric power generation module and measurement data of the measurement unit is transmitted to the outside via the communication unit.

Abstract: A thermoelectric conversion device includes: a thermoelectric conversion element in which a p-type thermoelectric material and an n-type thermoelectric material that are provided between an upper electrode and a lower electrode of the thermoelectric conversion element are alternately connected in series via the upper electrode and the lower electrode; an insulating layer that is provided between the upper electrode and the lower electrode and covers the p-type thermoelectric material and the n-type thermoelectric material; and an electric storage element that is provided between the upper electrode and the lower electrode and is covered by the insulating layer.

Abstract: A power generation device includes a thermoelectric conversion part; a cooling member configured to be disposed on one principal surface of the thermoelectric conversion part; and a heat generation part configured to be disposed on another principal surface of the thermoelectric conversion part, to be formed of a viscoelastic body having a plurality of cavities formed in the viscoelastic body, and to generate heat by violation.

Abstract: There is provided a sensor system capable of being used semi-permanently in a maintenance-free state without exchanging batteries as well as being installed in an already-existing manhole lid by a simple work on the spot, and having a measurement unit, a power source unit, and a communication unit, and installed in a manhole lid, wherein the power source unit includes a thermoelectric power generation module configured to generate electric power by a difference in temperature between a first heat transfer unit thermally connected to the manhole lid and a second heat transfer unit thermally connected to a heat radiating unit within a manhole, and the measurement unit and the communication unit are driven by electric power generated by the thermoelectric power generation module and measurement data of the measurement unit is transmitted to the outside via the communication unit.

Abstract: The present invention relates to a thermoelectric conversion element and a method for manufacturing the same and relates to suppression of breakage and deterioration of the thermoelectric conversion element due to partial pressurization from the vertical direction. This thermoelectric conversion element has: at least one n-type semiconductor body; at least one p-type semiconductor body; a first connecting electrode; a first out-put electrode for n-side output; and a second output electrode for p-side output, wherein areas of respective joint sections of the n-type semiconductor body with the first connecting electrode, the first output electrode, and the second output electrode and of the p-type semiconductor body with the first connecting electrode, the first output electrode, and the second output electrode are greater than respective cross-sectional areas in other positions, in an axial direction, of the n-type semiconductor body and the p-type semiconductor body.

Abstract: An actuator includes a first part having a magnetomotive element and configured to absorb heat up to at least a first temperature; a second part arranged so as to face the first part; a temperature-sensitive magnetic body provided between the first part and the second part and configured to move between a first position for contact with the first part and a second position for contact with the second part, the temperature-sensitive magnetic body having a Curie point lower than the first temperature and higher than a temperature of the second part; and a restoring part configured to restore the temperature-sensitive magnetic body from the first position to the second position.

Abstract: A microchannel cooling device includes a heat sink having a liquid refrigerant flow channel having a microscopic cross section and connected to a heat source thermally, and a thermoelectric element provided on the heat sink and extending parallel to a direction of extension of the liquid refrigerant flow channel.

Abstract: The invention relates to a semiconductor device, a method for manufacturing a semiconductor device and an electronic thermoelectric power generation device, a semiconductor device having a thermoelectric conversion element that is embedded in a semiconductor chip so as to be integrated with a semiconductor circuit can be implemented. A semiconductor substrate is provided with a through opening for a region in which a thermoelectric conversion element is to be formed, and a thermoelectric conversion element is embedded in the through opening, where the thermoelectric conversion element includes: a number of penetrating rods made of a thermoelectric conversion material; and an insulating reinforcement layer in which the penetrating rods are embedded and of which the thermal conductivity is lower than that of the thermoelectric conversion material.

Abstract: A micro movable device includes: a micro movable substrate including a micro movable unit, the micro movable unit including a frame section, a movable section, and a coupling section which couples the frame section and the movable section to each other; a support base; a first spacer and a second spacer which are provided between the frame section of the micro movable substrate and the base, the first and second spacers joining the frame section and the base to each other; and a fixation member provided between the frame section of the micro movable substrate and the base, the fixation member including a spacer portion which joins the frame section and the base to each other and an adhesive portion which covers the spacer portion and joins the frame section and the base to each other, the fixation member being provided between the first and second spacers.

Abstract: An electronic device having a variable capacitance element, includes a support substrate providing physical support, a pair of anchors formed on the support substrate, and having support portions in a direction perpendicular to a surface of the substrate, a movable electrode supported by the support portions of the pair of anchors, having opposing first and second side surfaces constituting electrode surfaces, and at least partially capable of elastic deformation, a first fixed electrode supported above the support substrate, and having a first electrode surface opposing to the first side surface of the movable electrode, and a second fixed electrode supported above the support substrate, and having a second electrode surface opposing to the second side surface of the movable electrode.

Abstract: A three-dimensional mounting semiconductor device includes a layer structure including a plurality of first substrates with a trench-shaped concavity formed in and a plurality of second substrates with semiconductor elements formed in, which are alternately stacked, wherein an unevenness defined by a size difference between the first substrate and the second substrate is formed on a side surface, and a first through-hole are defined by an inside surface of the trench-shaped concavity and a surface of the second substrate, and a third substrate jointed to the side surface of the layer structure and having an unevenness formed on a surface jointed to the layer structure which are engaged with the unevenness formed on the side surface of the layer structure.

Abstract: A micro movable device includes: a micro movable substrate in which a micro movable unit is formed, the micro movable unit including a frame, a movable part, and a coupling part for coupling the frame and the movable part to define an axial center of rotation of the movable part; a supporting substrate; and a reinforced fixed part provided between the frame and the supporting substrate, and including a first spacer that joins the frame to the supporting substrate and an adhesive part that covers the first spacer and joins the frame to the supporting substrate, wherein the frame includes a first area facing the movable part in a direction of extent of the axial center, and a second area different from the first area, and the reinforced fixed part is bonded to the second area of the frame.

Abstract: A thermoelectric conversion device includes: a thermoelectric conversion element in which a p-type thermoelectric material and an n-type thermoelectric material that are provided between an upper electrode and a lower electrode of the thermoelectric conversion element are alternately connected in series via the upper electrode and the lower electrode; an insulating layer that is provided between the upper electrode and the lower electrode and covers the p-type thermoelectric material and the n-type thermoelectric material; and an electric storage element that is provided between the upper electrode and the lower electrode and is covered by the insulating layer.

Abstract: The invention relates to a semiconductor device, a method for manufacturing a semiconductor device and an electronic thermoelectric power generation device, a semiconductor device having a thermoelectric conversion element that is embedded in a semiconductor chip so as to be integrated with a semiconductor circuit can be implemented. A semiconductor substrate is provided with a through opening for a region in which a thermoelectric conversion element is to be formed, and a thermoelectric conversion element is embedded in the through opening, where the thermoelectric conversion element includes: a number of penetrating rods made of a thermoelectric conversion material; and an insulating reinforcement layer in which the penetrating rods are embedded and of which the thermal conductivity is lower than that of the thermoelectric conversion material.

Abstract: A power generation device includes a thermoelectric conversion part; a cooling member configured to be disposed on one principal surface of the thermoelectric conversion part; and a heat generation part configured to be disposed on another principal surface of the thermoelectric conversion part, to be formed of a viscoelastic body having a plurality of cavities formed in the viscoelastic body, and to generate heat by violation.

Abstract: The present invention relates to a thermoelectric conversion element and a method for manufacturing the same and relates to suppression of breakage and deterioration of the thermoelectric conversion element due to partial pressurization from the vertical direction. This thermoelectric conversion element has: at least one n-type semiconductor body; at least one p-type semiconductor body; a first connecting electrode; a first out-put electrode for n-side output; and a second output electrode for p-side output, wherein areas of respective joint sections of the n-type semiconductor body with the first connecting electrode, the first output electrode, and the second output electrode and of the p-type semiconductor body with the first connecting electrode, the first output electrode, and the second output electrode are greater than respective cross-sectional areas in other positions, in an axial direction, of the n-type semiconductor body and the p-type semiconductor body.

Abstract: A microchannel cooling device includes a heat sink having a liquid refrigerant flow channel having a microscopic cross section and connected to a heat source thermally, and a thermoelectric element provided on the heat sink and extending parallel to a direction of extension of the liquid refrigerant flow channel.

Abstract: A three-dimensional mounting semiconductor device includes a layer structure including a plurality of first substrates with a trench-shaped concavity formed in and a plurality of second substrates with semiconductor elements formed in, which are alternately stacked, wherein an unevenness defined by a size difference between the first substrate and the second substrate is formed on a side surface, and a first through-hole are defined by an inside surface of the trench-shaped concavity and a surface of the second substrate, and a third substrate jointed to the side surface of the layer structure and having an unevenness formed on a surface jointed to the layer structure which are engaged with the unevenness formed on the side surface of the layer structure.