Patents by Inventor Norio Funahashi

Norio Funahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6043749
    Abstract: A frequency detection circuit has a transistor switching device between first and second electric potentials, and a gate applied with a clock signal. A resistor and a capacitor are connected in parallel between the output of the transistor switching device and the second potential. The capacitor is charged toward the first potential when the clock signal assumes one level and discharged toward the second potential in accordance with a time constant determined by the resistor and the capacitor when the clock signal changes to the other level.
    Type: Grant
    Filed: April 16, 1998
    Date of Patent: March 28, 2000
    Assignee: NEC Corporation
    Inventors: Hirofumi Saito, Norio Funahashi
  • Patent number: 6028335
    Abstract: A semiconductor device includes first and second elements, a light-shielding member, and a comparator. The first and second elements are formed on the same substrate, change in electrical characteristics upon irradiation of ultraviolet rays, and hold the changed states. The first element has the same arrangement as that of the second element. The light-shielding member is formed on the first element to shield ultraviolet rays. The comparator compares the electrical characteristics of the first and second elements and outputs an abnormality detection signal on the basis of the comparison results.
    Type: Grant
    Filed: April 22, 1998
    Date of Patent: February 22, 2000
    Assignee: NEC Corporation
    Inventors: Yuji Okamoto, Norio Funahashi
  • Patent number: 5086413
    Abstract: An EEPROM device comprises a memory cell array having a plurality of non-volatile memory cells respectively disposed at locations defined by word lines and bit lines and memorizing pieces of data information in a rewriteable manner, respectively, a row address decoder circuit responsive to an address signal indicative of a row address for selectively activating one of the word lines, a column address decoder circuit responsive to an address signal indicative of a column address for selecting one of the bit lines, and a data control unit selectively carrying out erasing, write-in and read-out operations on one of the non-volatile memory cells, in which the row address decoder circuit is further operative to concurrently activate every second word line in the presence of the row address signal indicative of a first state and to concurrently activate the other word lines in the presence of the row address signal indicative of a second state in a testing mode of operation, and in which the data control unit carri
    Type: Grant
    Filed: July 27, 1990
    Date of Patent: February 4, 1992
    Assignee: NEC Corporation
    Inventors: Toshihide Tsuboi, Norio Funahashi