Abstract: A method of manufacturing a fiber-reinforced thermoplastics, comprising a mixing step for mixing an uncured thermosetting resin with reinforcing fibers to obtain a mixture, and a reaction step for forming the thermoplastics by causing a polymerization reaction of the thermosetting resin in the mixture so that the thermosetting resin polymerizes.

Abstract: A material for a semiconductor-mounting heat dissipation substrate comprises a copper-molybdenum rolled composite obtained by impregnating melted copper into a void between powder particles of a molybdenum powder compact to obtain a molybdenum-copper composite and then rolling the composite. In a final rolling direction of a plate material, the coefficient of linear expansion is 8.3×10?6/K at 30-800° C. The material for a semiconductor-mounting heat dissipation substrate is superior in thermal conductivity to a CMC clad material and easy in machining by a punch press. The substrate material is used as a heat dissipation substrate (13) of a ceramic package (11).

Abstract: A material for a semiconductor-mounting heat dissipation substrate comprises a copper-molybdenum rolled composite obtained by impregnating melted copper into a void between powder particles of a molybdenum powder compact to obtain a composite of molybdenum and copper and then rolling the composite. In a final rolling direction of a plate material, the coefficient of linear expansion is 8.3×10?6/K at 30–800° C. The material for a semiconductor-mounting heat dissipation substrate is superior in thermal conductivity to a CMC clad material and easy in machining by a punch press. The substrate material is used as a heat dissipation substrate (13) of a ceramic package (11).

Abstract: A composite material is a Mo—Cu based composite material having a Cu content of 30 to 70 weight % and containing a copper pool phase and an Mo—Cu based composite phase. The copper pool phase is contained in an amount of 10-50 weight %. A heat-sink member uses the composite material.

Abstract: A package to be mounted with semiconductor chips has a heat-radiating substrate having a thickness of smaller than 0.4 mm of a Cu—Mo composite as prepared by impregnating from 30 to 40% by mass of copper (Cu) melt into a green compact of molybdenum. The heat-radiating substrate is produced by preparing an Mo green compact through isostatic molding, mounting Cu on the Mo green compact, heating it to thereby impregnate copper into the Mo green compact to give a Cu—Mo composite, and rolling the Cu—Mo composite into a sheet substrate.

Abstract: A package to be mounted with semiconductor chips has a heat-radiating substrate having a thickness of smaller than 0.4 mm of a Cu—Mo composite as prepared by impregnating from 30 to 40% by mass of copper (Cu) melt into a green compact of molybdenum. The heat-radiating substrate is produced by preparing an Mo green compact through isostatic molding, mounting Cu on the Mo green compact, heating it to thereby impregnate copper into the Mo green compact to give a Cu—Mo composite, and rolling the Cu—Mo composite into a sheet substrate.

Abstract: A package to be mounted with semiconductor chips has a heat-radiating substrate having a thickness of smaller than 0.4 mm of a Cu—Mo composite as prepared by impregnating from 30 to 40% by mass of copper (Cu) melt into a green compact of molybdenum. The heat-radiating substrate is produced by preparing an Mo green compact through isostatic molding, mounting Cu on the Mo green compact, heating it to thereby impregnate copper into the Mo green compact to give a Cu—Mo composite, and rolling the Cu—Mo composite into a sheet substrate. In the isostatic molding process, at least two or more plates.

Abstract: A material for a semiconductor-mounting heat dissipation substrate comprises a copper-molybdenum rolled composite obtained by impregnating melted copper into a void between powder particles of a molybdenum powder compact to obtain a composite of molybdenum and copper and then rolling the composite. In a final rolling direction of a plate material, the coefficient of linear expansion is 8.3×10−6/K at 30-800° C. The material for a semiconductor-mounting heat dissipation substrate is superior in thermal conductivity to a CMC clad material and easy in machining by a punch press. The substrate material is used as a heat dissipation substrate (13) of a ceramic package (11).

Abstract: A heat sink substrate comprises a Cu—Mo composite substrate composed of a molybdenum (Mo) green compact with which Copper (Cu) of 20-60 wt % is impregnated. It is preferable that the heat sink substrate is a rolled plate obtained by repeatedly warm rolling or cold rolling the Cu—Mo composite substrate and that the rolled plate does not include any fine void and unevenly impregnated copper, that is, copper and molybdenum are uniformly distributed therein.

Abstract: A heat sink substrate comprises a Cu—Mo composite substrate composed of a molybdenum (Mo) green compact with which Copper (Cu) of 20-60 wt % is impregnated. It is preferable that the heat sink substrate is a rolled plate obtained by repeatedly warm rolling or cold rolling the Cu—Mo composite substrate and that the rolled plate does not include any fine void and unevenly impregnated copper, that is, copper and molybdenum are uniformly distributed therein.

Abstract: A heat sink substrate comprises a Cu—Mo composite substrate composed of a molybdenum (Mo) green compact with which Copper (Cu) of 20-60 wt % is impregnated. It is preferable that the heat sink substrate is a rolled plate obtained by repeatedly warm rolling or cold rolling the Cu—Mo composite substrate and that the rolled plate does not include any fine void and unevenly impregnated copper, that is, copper and molybdenum are uniformly distributed therein.