Patents by Inventor Norio Ichikawa

Norio Ichikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220025258
    Abstract: A UV excitation light source comprises a phosphor. The phosphor contains ScxY1-xPO4 crystals (wherein 0<x<1), and, upon receiving UV light of a first wavelength, generates UV light of a second wavelength that is longer than the first wavelength. A method for producing the phosphor includes: a first step for producing a mixture that includes an oxide of Y, an oxide of Sc, phosphoric acid, and a liquid; a second step for vaporizing the liquid; and a third step for baking the mixture.
    Type: Application
    Filed: December 16, 2019
    Publication date: January 27, 2022
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Norio ICHIKAWA, Kohei IKEDA
  • Publication number: 20220013351
    Abstract: An ultraviolet light generation target includes a light emitting layer. The light emitting layer contains a YPO4 crystal to which at least scandium (Sc) is added, and receives an electron beam to generate ultraviolet light. Further, a method of manufacturing the ultraviolet light generation target includes a first step of preparing a mixture containing yttrium (Y) oxide, Sc oxide, phosphoric acid, and a liquid, a second step of evaporating the liquid, and a third step of firing the mixture.
    Type: Application
    Filed: December 13, 2019
    Publication date: January 13, 2022
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Norio ICHIKAWA, Kohei IKEDA
  • Patent number: 10381215
    Abstract: A target for ultraviolet light generation 20A includes a sapphire substrate 21 that transmits ultraviolet light UV, an interlayer 22 that is in contact with the sapphire substrate 21, includes oxygen atoms and aluminum atoms in a composition, and transmits ultraviolet light UV, and a luminous layer 23 that is provided on the interlayer 22, includes oxide crystals containing rare earth elements to which an activator agent is added, and receives electron beams EB so as to generate ultraviolet light UV.
    Type: Grant
    Filed: June 6, 2016
    Date of Patent: August 13, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Kohei Ikeda, Norio Ichikawa, Hiroyuki Taketomi
  • Patent number: 10079141
    Abstract: An ultraviolet light-generating target comprising a substrate transmitting ultraviolet light; and a light-emitting layer provided on the substrate and emitting ultraviolet light in response to an electron beam, wherein the light-emitting layer is an amorphous layer formed of Al2O3 doped with Sc.
    Type: Grant
    Filed: December 26, 2017
    Date of Patent: September 18, 2018
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Kohei Ikeda, Norio Ichikawa
  • Publication number: 20180182608
    Abstract: A target for ultraviolet light generation 20A includes a sapphire substrate 21 that transmits ultraviolet light UV, an interlayer 22 that is in contact with the sapphire substrate 21, includes oxygen atoms and aluminum atoms in a composition, and transmits ultraviolet light UV, and a luminous layer 23 that is provided on the interlayer 22, includes oxide crystals containing rare earth elements to which an activator agent is added, and receives electron beams EB so as to generate ultraviolet light UV.
    Type: Application
    Filed: June 6, 2016
    Publication date: June 28, 2018
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Kohei IKEDA, Norio ICHIKAWA, Hiroyuki TAKETOMI
  • Publication number: 20180182609
    Abstract: An ultraviolet light-generating target comprising a substrate transmitting ultraviolet light; and a light-emitting layer provided on the substrate and emitting ultraviolet light in response to an electron beam, wherein the light-emitting layer is an amorphous layer formed of Al2O3 doped with Sc.
    Type: Application
    Filed: December 26, 2017
    Publication date: June 28, 2018
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Kohei Ikeda, Norio Ichikawa
  • Patent number: 9240313
    Abstract: A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer disposed on the substrate and generating ultraviolet light in response to an electron beam. The light-emitting layer includes a polycrystalline film constituted by an oxide polycrystal containing Lu and Si doped with an activator or a polycrystalline film constituted by a rare-earth-containing aluminum garnet polycrystal doped with an activator.
    Type: Grant
    Filed: September 6, 2013
    Date of Patent: January 19, 2016
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshinori Honda, Hiroyuki Taketomi, Fumitsugu Fukuyo, Koji Kawai, Hidetsugu Takaoka, Norio Ichikawa, Takashi Suzuki
  • Publication number: 20150294853
    Abstract: A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer disposed on the substrate and generating ultraviolet light in response to an electron beam. The light-emitting layer includes a polycrystalline film constituted by an oxide polycrystal containing Lu and Si doped with an activator or a polycrystalline film constituted by a rare-earth-containing aluminum garnet polycrystal doped with an activator.
    Type: Application
    Filed: September 6, 2013
    Publication date: October 15, 2015
    Inventors: Yoshinori Honda, Hiroyuki Taketomi, Fumitsugu Fukuyo, Koji Kawai, Hidetsugu Takaoka, Norio Ichikawa, Takashi Suzuki
  • Patent number: 8895947
    Abstract: An ultraviolet light generating target 20 includes a substrate 21 made of sapphire, quartz or rock crystal; and a Pr:LuAG polycrystalline film 22, provided on the substrate 21, that generates ultraviolet light upon receiving an electron beam. By using a Pr:LuAG polycrystal as the target, the ultraviolet light generating efficiency can be increased more remarkably than when a Pr:LuAG single crystal film is used.
    Type: Grant
    Filed: April 24, 2012
    Date of Patent: November 25, 2014
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Yoshinori Honda, Fumitsugu Fukuyo, Takashi Suzuki, Norio Ichikawa, Takeaki Hattori, Koji Kawai, Shucheng Chu
  • Publication number: 20140034853
    Abstract: An ultraviolet light generating target 20 includes a substrate 21 made of sapphire, quartz or rock crystal; and a Pr:LuAG polycrystalline film 22, provided on the substrate 21, that generates ultraviolet light upon receiving an electron beam. By using a Pr:LuAG polycrystal as the target, the ultraviolet light generating efficiency can be increased more remarkably than when a Pr:LuAG single crystal film is used.
    Type: Application
    Filed: April 24, 2012
    Publication date: February 6, 2014
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Yoshinori Honda, Fumitsugu Fukuyo, Takashi Suzuki, Norio Ichikawa, Takeaki Hattori, Koji Kawai, Shucheng Chu
  • Patent number: 7166830
    Abstract: A substrate 18, a cathode 20 and an anode 22 are stored in a space demarcated by a casing 10, and the space is evacuated. The cathode 20 and the anode 22 are provided on the same surface of a substrate 18 having electric insulation, and have a comb-tooth shape so as to be mutually engaged. Therefore, the area of the part in which the cathode 20 and the anode 22 approach each other becomes larger, and thereby photoelectrons discharged from the cathode 20 through the incidence of ultraviolet rays are transmitted in the vacuum, and are favorably collected in the anode 22.
    Type: Grant
    Filed: April 11, 2003
    Date of Patent: January 23, 2007
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Tadashi Kitahara, Yoshiro Nomoto, Norio Ichikawa
  • Patent number: 6941815
    Abstract: A sensor with built-in circuits can be improved in the stability of the operation or characteristics. A circuit region and a sensor region are covered by a passivation film. The sensor region is partially covered by the passivation film. The sensor region and circuit region are protected by the passivation film, and an effect of the passivation film on the mechanical displacement of a diaphragm portion can be alleviated so that the sensor with built-in circuits may be improved in the stability of the operation or characteristics.
    Type: Grant
    Filed: June 19, 2002
    Date of Patent: September 13, 2005
    Assignees: Hitachi, Ltd., Hitachi Car Engineering Co., Ltd.
    Inventors: Yasuo Onose, Junichi Horie, Seiji Kuryu, Akihiko Saito, Norio Ichikawa, Atsuo Watanabe, Satoshi Shimada
  • Publication number: 20050140293
    Abstract: A substrate 18, a cathode 20 and an anode 22 are stored in a space demarcated by a casing 10, and the space is evacuated. The cathode 20 and the anode 22 are provided on the same surface of a substrate 18 having electric insulation, and have a comb-tooth shape so as to be mutually engaged. Therefore, the area of the part in which the cathode 20 and the anode 22 approach each other becomes larger, and thereby photoelectrons discharged from the cathode 20 through the incidence of ultraviolet rays are transmitted in the vacuum, and are favorably collected in the anode 22.
    Type: Application
    Filed: April 11, 2003
    Publication date: June 30, 2005
    Inventors: Tadashi Kitahara, Yoshiro Nomoto, Norio Ichikawa
  • Patent number: 6877383
    Abstract: By sealing a diaphragm with less processes and lower cost and reducing deformation due to remaining stress, a stable and highly reliable pressure sensor construction is proposed. The pressure sensor is low in measurement error and small in floating capacitance and leakage current and good in characteristic. As a means to attain the above object, a polycrystalline silicon diaphragm is sealed with a silicon oxide film deposited through a LPCVD method and then completely covered. The diaphragm is placed on a surface of a semiconductor substrate with a nearly constant gap of 0.15 to 1.3 ?m, and has difference-in-grade constructions of a deformation reducing means due to remaining stress.
    Type: Grant
    Filed: September 20, 2002
    Date of Patent: April 12, 2005
    Assignees: Hitachi, Ltd., Hitachi Car Engineering Co., Ltd.
    Inventors: Junichi Horie, Yasuo Onose, Norio Ichikawa, Seiji Kuryu, Satoshi Shimada, Akihiko Saito, Keiji Hanzawa, Masahiro Matsumoto, Hiroshi Moriya, Akio Yasukawa, Atsushi Miyazaki
  • Patent number: 6564643
    Abstract: A high-accuracy high-stability capacitor type pressure sensor which eliminates a parasitic capacitance between a reference capacitor and a semiconductor substrate. A capacitor type pressure sensor comprising, on a semiconductor substrate 10, an active capacitor 100 whose capacitance varies as the surrounding pressure varies, a reference capacitor 200 whose capacitance will not vary substantially as the surrounding pressure varies, and a circuit which is electrically connected to both said active and reference capacitors 100 and 200, detects the difference or ratio thereof, and uses the potential of a semiconductor substrate, wherein an electrode 30a of said reference capacitor is formed on the semiconductor substrate 10 with a dielectric 20 therebetween.
    Type: Grant
    Filed: April 12, 2001
    Date of Patent: May 20, 2003
    Assignees: Hitachi, Ltd., Hitachi Car Engineering Co., Ltd.
    Inventors: Junichi Horie, Atsushi Miyazaki, Satoshi Shimada, Akihiko Saitou, Yasuo Onose, Norio Ichikawa, Keiji Hanzawa
  • Publication number: 20030019299
    Abstract: By sealing a diaphragm with less processes and lower cost and reducing deformation due to remaining stress, a stable and highly reliable pressure sensor construction is proposed. The pressure sensor is low in measurement error and small in floating capacitance and leakage current and good in characteristic. As a means to attain the above object, a polycrystalline silicon diaphragm is sealed with a silicon oxide film deposited through a LPCVD method and then completely covered. The diaphragm is placed on a surface of a semiconductor substrate with a nearly constant gap of 0.15 to 1.3 &mgr;m, and has difference-in-grade constructions of a deformation reducing means due to remaining stress.
    Type: Application
    Filed: September 20, 2002
    Publication date: January 30, 2003
    Applicant: HITACHI, LTD.
    Inventors: Junichi Horie, Yasuo Onose, Norio Ichikawa, Seiji Kuryu, Satoshi Shimada, Akihiko Saito, Keiji Hanzawa, Masahiro Matsumoto, Hiroshi Moriya, Akio Yasukawa, Atsushi Miyazaki
  • Publication number: 20020157475
    Abstract: A sensor with built-in circuits can be improved in the stability of the operation or characteristics. A circuit region and a sensor region are covered by a passivation film. The sensor region is partially covered by the passivation film. The sensor region and circuit region are protected by the passivation film, and an effect of the passivation film on the mechanical displacement of a diaphragm portion can be alleviated so that the sensor with built-in circuits may be improved in the stability of the operation or characteristics.
    Type: Application
    Filed: June 19, 2002
    Publication date: October 31, 2002
    Applicant: Hitachi, Ltd.
    Inventors: Yasuo Onose, Junichi Horie, Seiji Kuryu, Akihiko Saito, Norio Ichikawa, Atsuo Watanabe, Satoshi Shimada
  • Patent number: 6377056
    Abstract: Dynamic quantitative displacement is converted stably and straight into voltage (D.C. output) by using a high speed detection driving frequency without restricting a response of an operational amplifier. When a dynamic quantity detection electrostatic capacitance changes according to a dynamic quantity, electric charges stored in this element and in a reference electrostatic capacitance become unbalanced to produce a difference value, and an output of an operational amplifier changes according to the difference in electric charge quantity. However, the output becomes finally stable when the electric charges in the dynamic quantity detection electrostatic capacitance and in the reference electrostatic capacitance become equal. The output is proportional to a reciprocal of the dynamic quantity detection electrostatic capacitance and it is a D.C. voltage. Further, output without depending on integration feedback capacitance (feedback condenser) CF can be obtained.
    Type: Grant
    Filed: August 26, 1999
    Date of Patent: April 23, 2002
    Assignees: Hitachi, Ltd., Hitachi Car Engineering Co., Ltd.
    Inventors: Keiji Hanzawa, Masahiro Matsumoto, Satoshi Shimada, Akihiko Saito, Yasuo Onose, Norio Ichikawa, Junichi Horie, Seiji Kuryu
  • Patent number: 6167761
    Abstract: In a capacitance type pressure sensor, a diaphragm is formed of a fragile material using an impurity-diffused monocrystal silicon and constitutes a stable pressure-responsive structure which does not undergo a plastic deformation. Between the diaphragm and a movable electrode is formed an oxide film to diminish stray capacitance between the movable electrode and a substrate and also between the movable electrode and a impurity-diffused layer. The oxide film and the movable electrode are each divided into plural regions so that the divided regions of the movable electrode are formed on the divided regions of the oxide film, thereby diminishing stress strain induced by a difference in therm expansion coefficient among the diaphragm, oxide film and movable electrode.
    Type: Grant
    Filed: June 24, 1998
    Date of Patent: January 2, 2001
    Assignee: Hitachi, Ltd. and Hitachi Car Engineering Co., Ltd.
    Inventors: Keiji Hanzawa, Akio Yasukawa, Satoshi Shimada, Seikou Suzuki, Akihiko Saito, Masahiro Matsumoto, Atsushi Miyazaki, Norio Ichikawa, Junichi Horie, Seiji Kuryu
  • Patent number: 6051853
    Abstract: A semiconductor pressure sensor utilizing electrostatic capacitance has a plurality of pressure sensing electrostatic capacitances and a reference electrostatic capacitance formed on one side of a silicon chip. As a movable electrode, the pressure sensing electrostatic capacitances each have a diaphragm, which may have a displacement portion composed of a central area thereof, and a peripheral portion which is more deformable than the central portion.
    Type: Grant
    Filed: October 3, 1997
    Date of Patent: April 18, 2000
    Assignees: Hitachi, Ltd., Hitachi Car Engineering Co., Ltd.
    Inventors: Satoshi Shimada, Akihiko Saito, Masahiro Matsumoto, Seikou Suzuki, Terumi Nakazawa, Atsushi Miyazaki, Norio Ichikawa, Keiji Hanzawa