Abstract: An ultraviolet light generation target includes a light emitting layer. The light emitting layer contains a YPO4 crystal to which at least scandium (Sc) is added, and receives an electron beam to generate ultraviolet light. Further, a method of manufacturing the ultraviolet light generation target includes a first step of preparing a mixture containing yttrium (Y) oxide, Sc oxide, phosphoric acid, and a liquid, a second step of evaporating the liquid, and a third step of firing the mixture.

Abstract: The manufacturing method is a method for manufacturing a light emitter that generates ultraviolet light. The light emitter contains a YPO4 crystal to which at least scandium (Sc) is added, and receives an electron beam or excitation light having a shorter wavelength than a wavelength of the ultraviolet light, to generate the ultraviolet light. The manufacturing method includes: producing a first mixture; producing a second mixture; producing a third mixture; and sintering the third mixture. The first mixture containing a compound of yttrium (Y), a compound of scandium (Sc), phosphoric acid or a phosphate compound, and a liquid is produced. In the producing the second mixture, the second mixture in a powder form is produced by evaporating the liquid. In the producing the third mixture, the third mixture is produced by mixing either one or both of an alkali metal halide and an alkali metal carbonate with the second mixture.

Abstract: A UV excitation light source comprises a phosphor. The phosphor contains ScxY1-xPO4 crystals (wherein 0<x<1), and, upon receiving UV light of a first wavelength, generates UV light of a second wavelength that is longer than the first wavelength. A method for producing the phosphor includes: a first step for producing a mixture that includes an oxide of Y, an oxide of Sc, phosphoric acid, and a liquid; a second step for vaporizing the liquid; and a third step for baking the mixture.

Abstract: An ultraviolet light generation target includes a light emitting layer. The light emitting layer contains a YPO4 crystal to which at least scandium (Sc) is added, and receives an electron beam to generate ultraviolet light. Further, a method of manufacturing the ultraviolet light generation target includes a first step of preparing a mixture containing yttrium (Y) oxide, Sc oxide, phosphoric acid, and a liquid, a second step of evaporating the liquid, and a third step of firing the mixture.

Abstract: A target for ultraviolet light generation 20A includes a sapphire substrate 21 that transmits ultraviolet light UV, an interlayer 22 that is in contact with the sapphire substrate 21, includes oxygen atoms and aluminum atoms in a composition, and transmits ultraviolet light UV, and a luminous layer 23 that is provided on the interlayer 22, includes oxide crystals containing rare earth elements to which an activator agent is added, and receives electron beams EB so as to generate ultraviolet light UV.

Abstract: An ultraviolet light-generating target comprising a substrate transmitting ultraviolet light; and a light-emitting layer provided on the substrate and emitting ultraviolet light in response to an electron beam, wherein the light-emitting layer is an amorphous layer formed of Al2O3 doped with Sc.

Abstract: An ultraviolet light-generating target comprising a substrate transmitting ultraviolet light; and a light-emitting layer provided on the substrate and emitting ultraviolet light in response to an electron beam, wherein the light-emitting layer is an amorphous layer formed of Al2O3 doped with Sc.

Abstract: A target for ultraviolet light generation 20A includes a sapphire substrate 21 that transmits ultraviolet light UV, an interlayer 22 that is in contact with the sapphire substrate 21, includes oxygen atoms and aluminum atoms in a composition, and transmits ultraviolet light UV, and a luminous layer 23 that is provided on the interlayer 22, includes oxide crystals containing rare earth elements to which an activator agent is added, and receives electron beams EB so as to generate ultraviolet light UV.

Abstract: A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer disposed on the substrate and generating ultraviolet light in response to an electron beam. The light-emitting layer includes a polycrystalline film constituted by an oxide polycrystal containing Lu and Si doped with an activator or a polycrystalline film constituted by a rare-earth-containing aluminum garnet polycrystal doped with an activator.

Abstract: A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer disposed on the substrate and generating ultraviolet light in response to an electron beam. The light-emitting layer includes a polycrystalline film constituted by an oxide polycrystal containing Lu and Si doped with an activator or a polycrystalline film constituted by a rare-earth-containing aluminum garnet polycrystal doped with an activator.

Abstract: An ultraviolet light generating target 20 includes a substrate 21 made of sapphire, quartz or rock crystal; and a Pr:LuAG polycrystalline film 22, provided on the substrate 21, that generates ultraviolet light upon receiving an electron beam. By using a Pr:LuAG polycrystal as the target, the ultraviolet light generating efficiency can be increased more remarkably than when a Pr:LuAG single crystal film is used.

Abstract: An ultraviolet light generating target 20 includes a substrate 21 made of sapphire, quartz or rock crystal; and a Pr:LuAG polycrystalline film 22, provided on the substrate 21, that generates ultraviolet light upon receiving an electron beam. By using a Pr:LuAG polycrystal as the target, the ultraviolet light generating efficiency can be increased more remarkably than when a Pr:LuAG single crystal film is used.

Abstract: A substrate 18, a cathode 20 and an anode 22 are stored in a space demarcated by a casing 10, and the space is evacuated. The cathode 20 and the anode 22 are provided on the same surface of a substrate 18 having electric insulation, and have a comb-tooth shape so as to be mutually engaged. Therefore, the area of the part in which the cathode 20 and the anode 22 approach each other becomes larger, and thereby photoelectrons discharged from the cathode 20 through the incidence of ultraviolet rays are transmitted in the vacuum, and are favorably collected in the anode 22.

Abstract: A sensor with built-in circuits can be improved in the stability of the operation or characteristics. A circuit region and a sensor region are covered by a passivation film. The sensor region is partially covered by the passivation film. The sensor region and circuit region are protected by the passivation film, and an effect of the passivation film on the mechanical displacement of a diaphragm portion can be alleviated so that the sensor with built-in circuits may be improved in the stability of the operation or characteristics.

Abstract: A substrate 18, a cathode 20 and an anode 22 are stored in a space demarcated by a casing 10, and the space is evacuated. The cathode 20 and the anode 22 are provided on the same surface of a substrate 18 having electric insulation, and have a comb-tooth shape so as to be mutually engaged. Therefore, the area of the part in which the cathode 20 and the anode 22 approach each other becomes larger, and thereby photoelectrons discharged from the cathode 20 through the incidence of ultraviolet rays are transmitted in the vacuum, and are favorably collected in the anode 22.

Abstract: By sealing a diaphragm with less processes and lower cost and reducing deformation due to remaining stress, a stable and highly reliable pressure sensor construction is proposed. The pressure sensor is low in measurement error and small in floating capacitance and leakage current and good in characteristic. As a means to attain the above object, a polycrystalline silicon diaphragm is sealed with a silicon oxide film deposited through a LPCVD method and then completely covered. The diaphragm is placed on a surface of a semiconductor substrate with a nearly constant gap of 0.15 to 1.3 ?m, and has difference-in-grade constructions of a deformation reducing means due to remaining stress.

Abstract: A high-accuracy high-stability capacitor type pressure sensor which eliminates a parasitic capacitance between a reference capacitor and a semiconductor substrate. A capacitor type pressure sensor comprising, on a semiconductor substrate 10, an active capacitor 100 whose capacitance varies as the surrounding pressure varies, a reference capacitor 200 whose capacitance will not vary substantially as the surrounding pressure varies, and a circuit which is electrically connected to both said active and reference capacitors 100 and 200, detects the difference or ratio thereof, and uses the potential of a semiconductor substrate, wherein an electrode 30a of said reference capacitor is formed on the semiconductor substrate 10 with a dielectric 20 therebetween.

Abstract: By sealing a diaphragm with less processes and lower cost and reducing deformation due to remaining stress, a stable and highly reliable pressure sensor construction is proposed. The pressure sensor is low in measurement error and small in floating capacitance and leakage current and good in characteristic. As a means to attain the above object, a polycrystalline silicon diaphragm is sealed with a silicon oxide film deposited through a LPCVD method and then completely covered. The diaphragm is placed on a surface of a semiconductor substrate with a nearly constant gap of 0.15 to 1.3 &mgr;m, and has difference-in-grade constructions of a deformation reducing means due to remaining stress.

Abstract: A sensor with built-in circuits can be improved in the stability of the operation or characteristics. A circuit region and a sensor region are covered by a passivation film. The sensor region is partially covered by the passivation film. The sensor region and circuit region are protected by the passivation film, and an effect of the passivation film on the mechanical displacement of a diaphragm portion can be alleviated so that the sensor with built-in circuits may be improved in the stability of the operation or characteristics.

Abstract: Dynamic quantitative displacement is converted stably and straight into voltage (D.C. output) by using a high speed detection driving frequency without restricting a response of an operational amplifier. When a dynamic quantity detection electrostatic capacitance changes according to a dynamic quantity, electric charges stored in this element and in a reference electrostatic capacitance become unbalanced to produce a difference value, and an output of an operational amplifier changes according to the difference in electric charge quantity. However, the output becomes finally stable when the electric charges in the dynamic quantity detection electrostatic capacitance and in the reference electrostatic capacitance become equal. The output is proportional to a reciprocal of the dynamic quantity detection electrostatic capacitance and it is a D.C. voltage. Further, output without depending on integration feedback capacitance (feedback condenser) CF can be obtained.