Abstract: A photoelectric fiber includes a fiber including a core through which light is guided; an electrical unit formed continuously with the fiber, the electrical unit being configured to house a photoelectric conversion chip including a photoelectric conversion element; and an external electrode formed on a front surface of at least one of the fiber or the electrical unit, wherein the photoelectric conversion chip is optically connected to the core and electrically connected to the external electrode.

Abstract: The present disclosure relates to a method of producing a catalyst for exhaust gas purification, including: (i) a process in which a Pd precursor and a Pt precursor are dissolved in a solvent to prepare a solution containing Pd and Pt, the content of Pt with respect to a total weight of Pd and Pt being 85 weight % or less; and (ii) a process in which the solution containing Pd and Pt prepared in the process (i) is supported on a catalyst coating layer.

Abstract: The present disclosure provides an exhaust gas purification apparatus for motor vehicles that has succeeded in suppressing peeling of a coat layer from an exhaust gas purification catalyst. Such exhaust gas purification apparatus for motor vehicles comprises: an exhaust gas purification catalyst comprising a substrate and a coat layer coated on the substrate comprising a microwave-absorbing material, a noble metal, and aluminum oxide (Al2O3); and a microwave-generating apparatus for heating the microwave-absorbing material located ahead of the exhaust gas purification catalyst with respect to an exhaust gas flow direction, wherein the microwave-absorbing material includes NiFe2O4, the noble metal includes at least one metal selected from the group consisting of platinum (Pt), palladium (Pd), and rhodium (Rh), and contents of zinc oxide (ZnO) and copper(II) oxide (CuO) in the coat layer are equivalent to or lower than the given levels.

Abstract: The present disclosure provides an exhaust gas purification apparatus for motor vehicles that has succeeded in suppressing peeling of a coat layer from an exhaust gas purification catalyst. Such exhaust gas purification apparatus for motor vehicles comprises: an exhaust gas purification catalyst comprising a substrate and a coat layer coated on the substrate comprising a microwave-absorbing material, a noble metal, and aluminum oxide (Al2O3); and a microwave-generating apparatus for heating the microwave-absorbing material located ahead of the exhaust gas purification catalyst with respect to an exhaust gas flow direction, wherein the microwave-absorbing material includes NiFe2O4, the noble metal includes at least one metal selected from the group consisting of platinum (Pt), palladium (Pd), and rhodium (Rh), and contents of zinc oxide (ZnO) and copper(II) oxide (CuO) in the coat layer are equivalent to or lower than the given levels.

Abstract: An exhaust gas catalyst includes: catalyst particles that clean exhaust gas; and magnetic particles that are placed around the catalyst particles and that generate heat upon absorption of microwaves. Each of the magnetic particles includes: a core portion composed of a ferromagnetic material capable of generating heat upon absorption of microwaves; and a shell portion coating a surface of the core portion, the shell portion having a property of permitting passage of microwaves, the shell portion being superior to ?-alumina or ?-alumina in a property of blocking gases.

Abstract: Provided is an exhaust gas purifying apparatus including a first catalyst and a second catalyst that passes exhaust gas from the first catalyst, in which the temperature of the second catalyst can be increased in an early stage after an engine is started, and thus exhaust gas purification efficiency can be enhanced in an earlier stage than in conventional apparatuses. The apparatus includes an exhaust gas purifying catalyst that includes a first catalyst for purifying exhaust gas from an exhaust manifold and a second catalyst for purifying exhaust gas having passed through the first catalyst. The heat capacity of the first catalyst is lower than that of the second catalyst. The heat capacity of the second catalyst is 184 to 322 J/K under a temperature environment of 25° C., and that of the first catalyst is less than or equal to 20 J/K under a temperature environment of 25° C.

Abstract: Provided is an exhaust gas purifying apparatus including a first catalyst and a second catalyst that passes exhaust gas from the first catalyst, in which the temperature of the second catalyst can be increased in an early stage after an engine is started, and thus exhaust gas purification efficiency can be enhanced in an earlier stage than in conventional apparatuses. The apparatus includes an exhaust gas purifying catalyst that includes a first catalyst for purifying exhaust gas from an exhaust manifold and a second catalyst for purifying exhaust gas having passed through the first catalyst. The heat capacity of the first catalyst is lower than that of the second catalyst. The heat capacity of the second catalyst is 184 to 322 J/K under a temperature environment of 25° C., and that of the first catalyst is less than or equal to 20 J/K under a temperature environment of 25° C.

Abstract: A vital information measuring device includes: a flexible substrate including a functioning part which is mounted thereon; and an outer member for covering the flexible substrate. The functioning part has: a sensor section for sequentially measuring a parameter relating to certain vital information on a subject; a circuit section for performing a predetermined process with respect to a measurement signal outputted from the sensor section; a memory section for storing therein the measurement signal or measurement data after the process by the circuit section; a display section for displaying thereon certain information relating to the measurement; and a power source section for supplying a drive voltage to the respective sections of the functioning part.

Abstract: A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.

Abstract: Disclosed is a positive resist processing liquid composition which is composed of an aqueous solution containing a quaternary ammonium hydroxide represented by the following general formula (I). In the formula, R1 and R3 independently represent a methyl group, and R2 represents an alkyl group having 12-18 carbon atoms.

Abstract: The present invention provides an etching solution composition for etching crystalline transparent conductive films which enables etching of a crystalline ITO film without damaging copper and/or copper alloy used in electrode materials. Etching solution compositions for etching crystalline transparent conductive films described herein consist of an aqueous solution that comprises 1-10 wt % of a fluorine compound.

Abstract: As a washing liquid and an etching solution for semiconductor substrates and glass substrates, alkaline aqueous solutions are used; however, since metal impurities are adsorbed on the substrate surface during processing, a next process for removing the adsorbed metal impurities is required. In addition, when a washing liquid is used, it cannot wash off metal impurities; therefore an acid washing process is required. The present invention provides an aqueous solution composition, which is an alkaline aqueous solution but is able to prevent adsorption of metal impurities, which also has cleaning capability. By means of an alkaline aqueous solution composition used for washing or etching a substrate, the composition comprising a chelating agent represented by the general formula (1): and an alkaline component, the adsorption of metal impurities on the substrate is prevented, and metal impurities adsorbed on the substrate are washed off.

Abstract: A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.

Abstract: A semiconductor substrate cleaning liquid composition is provided that includes one or more types selected from the group consisting of a compound having at least two sulfonic acid groups per molecule, phytic acid, and a condensed phosphoric acid compound; an inorganic acid; and water. There is also provided a process for cleaning a semiconductor substrate that includes a first step of cleaning the semiconductor substrate using the semiconductor substrate cleaning liquid composition and, subsequent to the first step, a second step of cleaning the semiconductor substrate with pure water, ozone water formed by dissolving ozone gas in pure water, or aqueous hydrogen peroxide.

Abstract: A post-dry etching cleaning liquid composition for cleaning a substrate after dry etching is provided, the cleaning liquid composition containing at least one type of fluorine compound, glyoxylic acid, at least one type of organic acid salt, and water. With regard to the fluorine compound, ammonium fluoride may be used. With regard to the organic acid salt, at least one of ammonium oxalate, ammonium tartarate, ammonium citrate, and ammonium acetate may be used.

Abstract: A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the composition including one or two or more types of inorganic acid and one or two or more types of inorganic fluorine compound. There is also provided a process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.

Abstract: An aqueous solution of ammonia, tetramethylammonium hydroxide and sodium hydroxide, etc. has been used as a cleaning liquid and an etching liquid of a semiconductor substrate and a glass substrate. However, the metal impurities in the alkali components are adsorbed onto the substrate surface during treatment, so that a process for removing the adsorbed metal impurities is necessary as the next process. In addition, in the case of the cleaning liquid, though it is effective in the removal of fine particles, the metal impurities cannot be cleaned, so that it is necessary to carry out acid cleaning, which makes the process complicated. According to the present invention, the alkaline aqueous solution for treating a substrate wherein an alkali component and a specific chelating agent are combined prevents adsorption of metal impurities onto the substrate, and further cleans and removes the metals adhered to the substrate.

Abstract: Disclosed is a positive resist processing liquid composition which is composed of an aqueous solution containing a quaternary ammonium hydroxide represented by the following general formula (I). In the formula, R1 and R3 independently represent a methyl group, and R2 represents an alkyl group having 12-18 carbon atoms.

Abstract: A support apparatus for optical characteristic measurement includes a measurement data inputter configured to input measurement data obtained by an optical characteristic measuring instrument, an image inputter configured to input an image of a measurement object, a measurement table in which the measurement data and the image of the measurement object corresponding to the measurement data are recorded, and a measurement data manager configured to record the measurement data inputted by the measurement data inputter in the measurement table so as to be associated with the image of the measurement object every time an optical characteristic of the measurement object is measured.

Abstract: It is an object of the present invention to provide a liquid composition for cleaning a semiconductor substrate capable of removing metal impurities on the substrate surface without corroding a copper wiring in the manufacturing process of a semiconductor circuit element. According to the present invention, by means of a cleaning liquid composition for cleaning a semiconductor substrate, comprising one or more aliphatic polycarboxylic acids and one or more basic amino acids, metal impurities can be removed without corroding the copper wiring in a cleaning process of a semiconductor substrate having a copper wiring, in particular in a cleaning process of a semiconductor substrate in which the copper wiring is exposed after chemical mechanical polishing (CMP).