Patents by Inventor Norio Kanetsuki

Norio Kanetsuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180206671
    Abstract: A liquid cooling device that is capable of efficiently cooling a liquid in the inside of a liquid holding container, and a beverage forming device including the liquid cooling device are provided. The liquid cooling device includes the liquid holding container that has an open portion; a container mounting part on which the liquid holding container is to be mounted; an air passage; and an airflow generating unit. The air passage is located directly above the open portion (4b), and at least a part of an outer periphery of the air passage extends along a peripheral edge of the open portion (4b). The airflow generating unit generates, within the air passage, an airflow flowing along the air passage. A hole portion (33) that communicates with the open portion (4b) is provided in a lower surface of the air passage.
    Type: Application
    Filed: July 22, 2016
    Publication date: July 26, 2018
    Inventors: Masaaki KODAMA, Toshinori OKADA, Daisuke TAKAHASHI, Motoyasu YOSHII, Hitoshi KIJI, Jun GOTO, Shinji NAGAI, Daiki ENDO, Norio KANETSUKI, Yukari MORIOKA
  • Publication number: 20180140128
    Abstract: A disc-shaped stirring element (100A) includes at least one projecting portion (102) at a position on a lower surface (103a) separated from a rotation center, the projecting portion (102) projecting toward a bottom surface (51a) of a stirring container (51), and an upper surface (103b) of the stirring element (100A) is planar.
    Type: Application
    Filed: May 16, 2016
    Publication date: May 24, 2018
    Inventors: Masaaki KODAMA, Toshinori OKADA, Daisuke TAKAHASHI, Norio KANETSUKI, Shinji NAGAI, Daiki ENDO, Hitoshi KIJI, Motoyasu YOSHII
  • Patent number: 6893970
    Abstract: According to a plasma processing method, a process gas supplied into a process chamber is used to generate plasma from the process gas and process a substrate placed in the process chamber by means of the plasma. The substrate includes stacked films of at least two types to be etched by the plasma, and, according to any of the films that is to be etched, a change is made in the process gas in the plasma generation period. Accordingly, the time required for any process except for the main plasma process can be shortened so that the total time for the entire plasma process can be shortened to improve the processing speed.
    Type: Grant
    Filed: December 12, 2001
    Date of Patent: May 17, 2005
    Assignees: Sharp Kabushiki Kaisha, Tadahiro Ohmi
    Inventors: Norio Kanetsuki, Tatsushi Yamamoto, Masaki Hirayama, Tadahiro Ohmi
  • Patent number: 6527908
    Abstract: A plasma process apparatus capable of preventing generation of plasma in an unwanted location and performing uniform plasma processing with stability is obtained. The plasma process apparatus includes a processing chamber having an internal wall surface; a microwave radiating member having one wall surface and the other wall surface that faces the internal wall surface of the processing chamber, and being disposed such that a space is formed between the other wall surface and a portion of the internal wall surface, and propagating and radiating microwaves within the processing chamber; and a reactive gas supply member, including a reactive gas supply passage having a space formed between the other wall surface of the microwave radiating member and the internal wall surface; and a microwave transmission preventing member disposed on a region, which faces the reactive gas supply passage, of the other wall surface of the microwave radiating member.
    Type: Grant
    Filed: March 21, 2001
    Date of Patent: March 4, 2003
    Assignees: Sharp Kabushiki Kaisha
    Inventors: Norio Kanetsuki, Takamitsu Tadera, Tatsushi Yamamoto, Masaki Hirayama, Tadahiro Ohmi
  • Publication number: 20020084255
    Abstract: According to a plasma processing method, a process gas supplied into a process chamber is used to generate plasma from the process gas and process a substrate placed in the process chamber by means of the plasma. The substrate includes stacked films of at least two types to be etched by the plasma, and, according to any of the films that is to be etched, a change is made in the process gas in the plasma generation period. Accordingly, the time required for any process except for the main plasma process can be shortened so that the total time for the entire plasma process can be shortened to improve the processing speed.
    Type: Application
    Filed: December 12, 2001
    Publication date: July 4, 2002
    Inventors: Norio Kanetsuki, Tatsushi Yamamoto, Masaki Hirayama, Tadahiro Ohmi
  • Publication number: 20020043341
    Abstract: A plasma process apparatus capable of preventing generation of plasma in an unwanted location and performing uniform plasma processing with stability is obtained. The plasma process apparatus includes a processing chamber having an internal wall surface; a microwave radiating member having one wall surface and the other wall surface that faces the internal wall surface of the processing chamber, and being disposed such that a space is formed between the other wall surface and a portion of the internal wall surface, and propagating and radiating microwaves within the processing chamber; and a reactive gas supply member, including a reactive gas supply passage having a space formed between the other wall surface of the microwave radiating member and the internal wall surface; and a microwave transmission preventing member disposed on a region, which faces the reactive gas supply passage, of the other wall surface of the microwave radiating member.
    Type: Application
    Filed: March 21, 2001
    Publication date: April 18, 2002
    Inventors: Norio Kanetsuki, Takamitsu Tadera, Tatsushi Yamamoto, Masaki Hirayama, Tadahiro Ohmi