Abstract: A polishing apparatus has a feed reel for feeding a polishing tape wound thereon and having a polishing surface, a take-up reel for reeling up the polishing tape from the feed reel, a presser for pressing the polishing tape between the feed reel and the take-up reel against a surface, to be polished, of a workpiece, and a motor for rotating the take-up reel. The feed reel, the take-up reel, and the presser are housed in a cartridge, which is detachably held by a cartridge holder.

Abstract: A polishing apparatus can improve the uniformity of thickness within a workpiece or reduce thickness variation between serially polished workpieces. The polishing apparatus comprises a polishing unit having a polishing tool for providing a polishing surface and a workpiece holding device for holding the workpiece. A polishing solution or liquid supplying device is provided for supplying a polishing solution or liquid into a polishing interface between the surface of the workpiece and the polishing surface. A temperature of the polishing interface is controlled according to at least an ambient temperature of a polishing space surrounding the polishing unit, as a variable parameter.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish by a combination of chemical polishing and mechanical polishing. The polishing apparatus includes a turntable with a polishing cloth mounted on an upper surface thereof, a top ring for supporting the workpiece to be polished and pressing the workpiece against the polishing cloth, and a dressing tool for dressing the polishing cloth on the turntable. The polishing apparatus further includes a cover which covers an upper surface of the turntable for preventing liquid on the turntable from being scattered, and inserting holes formed in an upper wall of the cover for inserting the top ring and the dressing tool therethrough.

Abstract: A workpiece such as a semiconductor wafer is polished by pressing the workpiece against a polishing surface under a predetermined pressure. A polished surface of the workpiece is processed by pressing the workpiece against a processing surface under a predetermined pressure while the processing surface makes circulatory translational motion along a predetermined path. The processing surface comprises a surface of a polishing cloth or a surface of an abrading plate, and the polished surface of the workpiece is further polished or cleaned.

Abstract: The object of the present invention is to provide a polishing apparatus that can supply a polishing solution having a non-varying distribution of abrading particles sizes at a steady rate. An apparatus (20) for delivering a polishing solution to a polishing apparatus (22) is disclosed. The apparatus (20) comprises: a solution passage for transporting the polishing solution; and an ultrasonic vibrator (72) being provided in at least one location of the solution passage.

Abstract: A polishing cloth mounted on a turntable is dressed by bringing a dresser in contact with the polishing cloth for restoring polishing capability of the polishing cloth. The dressing is performed by measuring heights of a surface of the polishing cloth at radial positions of the polishing cloth in a radial direction thereof, determining a rotational speed of the dresser with respect to a rotational speed of the turntable on the basis of the measured heights, and dressing the polishing cloth by pressing the dresser against the polishing cloth while the turntable and the dresser are rotating. The dresser has an annular diamond grain layer or an annular SiC layer.

Abstract: A holding unit for holding a substrate to enable a surface of the substrate to be processed. The unit comprises a vacuum suction member that comes into contact with a peripheral portion of the surface of the substrate and sucks the substrate. A processing apparatus holds the wafer stably and allows an edge, a bevel portion and/or a back surface of the wafer to be processed.

Abstract: A polishing cloth mounted on a turntable is dressed by bringing a dresser in contact with the polishing cloth for restoring the polishing capability of the polishing cloth. The dressing is performed by measuring heights of a surface of the polishing cloth at radial positions of the polishing cloth in a radial direction thereof, determining a rotational speed of the dresser with respect to a rotational speed of the turntable on the basis of the measured heights, and dressing the polishing cloth by pressing the dresser against the polishing cloth while the turntable and the dresser are rotating. The dresser has an annular diamond grain layer or an annular SiC layer.

Abstract: A substrate is plated with a metal film of uniform thickness only in a limited area thereof which is to be plated. A substrate plating apparatus has a substrate holder for holding a substrate and a plating cell for plating a portion of a surface, to be plated, of the substrate held by the substrate holder. The plating cell has an anode disposed so as to cover the portion of the surface, to be plated, of the substrate held by the substrate holder, a cathode for supplying a current to the surface, to be plated, of the substrate in such a state that the cathode is brought into contact with the substrate, a plating liquid supplying device for supplying a plating liquid between the anode and the surface, to be plated, of the substrate, and a power source for applying a voltage between the anode and the cathode.

Abstract: There is provided a polishing apparatus comprising an attitude controller for controlling an attitude or orientation of a turntable having a polishing surface and/or a carrier for holding an article to be polished in a sliding contact relation with the polishing surface. The turntable and carrier are connected to their drive shafts through universal joints. The attitude controllers control angles of tilting of the turntable and the carrier relative to their drive shafts.

Abstract: A substrate polishing apparatus wherein semiconductor substrate is held by a top ring 10-2 or 11-2 and is pressed against a polishing surface of a polishing table 10-1 or 10-2. A surface to be polished of the semiconductor substrate is polished by a relative movement between the semiconductor substrate and the polishing surface. The apparatus includes pressing force changing mechanism for changing an pressing force for pressing the semiconductor substrate, relative movement seed changing mechanism for changing the number of revolutions of the top ring and/or the polishing table, and control mechanism. The control mechanism performs the polishing through plural polishing processes on the polishing table 10-1 or 10-2 while changing the pressing force and the number of revolutions.

Abstract: A polishing apparatus for polishing a workpiece such as a semiconductor wafer has a turntable with an abrasive cloth mounted on an upper surface thereof, and a top ring for holding a workpiece and pressing the workpiece against the abrasive cloth under a first pressing force to polish the workpiece. The top ring has a recess defined therein for accommodating the workpiece therein. A presser ring is vertically movably disposed around the top ring, and pressed against the abrasive cloth under a variable second pressing force. The first and second pressing forces are variable independently of each other, and the second pressing force is determined based on the first pressing force.

Abstract: This invention relates, particularly, to a plating method and apparatus for a substrate for uses, such as the filling of a metal, e.g., copper (Cu), into a fine interconnection pattern (recesses) formed in a semiconductor substrate.

Abstract: A method of polishing substrates which enables a size of a polishing table to be reduced is provided. In the method, a surface of a substrate to be polished is brought into contact with a polishing surface of a polishing table in such a manner that a portion of the surface of the substrate extends outwardly from an outer periphery of the polishing surface The substrate is rotated about its center axis while keeping its surface in contact with the polishing surface of the polishing table. The attitude of the substrate carrier is controlled so that the surface of the substrate is kept parallel with the polishing surface of the polishing table during a polishing operation.

Abstract: A workpiece such as a semiconductor wafer is polished by pressing the workpiece against a polishing surface under a predetermined pressure. A polished surface of the workpiece is processed by pressing the workpiece against a processing surface under a predetermined pressure while the processing surface makes circulatory translational motion along a predetermined path. The processing surface comprises a surface of a polishing cloth or a surface of an abrading plate, and the polished surface of the workpiece is further polished or cleaned.

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish, and allows a polishing pad to be automatically replaced without stopping rotary or circulatory motion of a polishing table. The polishing apparatus comprises a polishing table for making rotary or circulatory motion, a top ring vertically movably disposed above the polishing table for removably holding a workpiece to be polished, a pair of rolls rotatable about their own axes and movable in unison with the polishing table and a polishing pad which is wound on one of the rolls and supplied over an upper surface of the polishing table toward the other of the rolls.

Abstract: A substrate plating apparatus forms an interconnection layer on an interconnection region composed of a fine groove and/or a fine hole defined in a substrate. The substrate plating apparatus includes a plating unit for forming a plated layer on a surface of the substrate including the interconnection region, a chemical mechanical polishing unit for chemically mechanically polishing the substrate to remove the plated layer from the surface of the substrate leaving a portion of the plated layer in the interconnection region, a cleaning unit for cleaning the substrate after the plated layer is formed or the substrate is chemically mechanically polished, a drying unit for drying the substrate after the substrate is cleaned, and a substrate transfer unit for transferring the substrate to and from each of the first plating unit, the first chemical mechanical polishing unit, the cleaning unit, and the drying unit.

Abstract: A substrate processing apparatus fills a metal such as copper or the like in fine interconnection patterns or trenches defined in a semiconductor substrate. The substrate processing apparatus has a loading/unloading unit for placing a substrate cassette to load and unload a substrate, a substrate treating unit for treating a substrate, and a transfer robot for transferring a substrate between the loading/unloading unit and the substrate treating unit. The loading/unloading unit, the substrate treating unit, and the transfer robot are installed in a single facility. The loading/unloading unit has a rotary table which is horizontally rotatable for positioning the substrate cassette in a position to detect the substrate cassette placed in the loading/unloading unit and to remove the substrate from the substrate cassette with the transfer robot.

Abstract: A semiconductor substrate having a Cu layer formed so as to fill wiring grooves formed in the substrate surface and to cover regions of the substrate surface where no wiring groove is formed is brought into sliding contact with a polishing surface on a turntable to carry out polishing until the Cu layer is polished to a predetermined thickness. Then, the semiconductor substrate is brought into sliding contact with a polishing surface on a turntable to carry out polishing until the Cu layer on the substrate surface is removed, except for portions of the Cu layer formed to fill the wiring grooves, and a barrier metal layer is also removed. Thus, the Cu layer on the substrate surface can be removed uniformly, and the Cu wiring portions formed in the wiring grooves can be planarly and uniformly polished without giving rise to problems of over-polishing such as dishing or erosion.

Abstract: A method is suitable for cleaning substrates, after polishing, that require a high degree of cleanliness, such as semiconductor wafers, glass substrates, or liquid crystal displays. The method comprises polishing a substrate using an abrasive liquid containing abrasive particles, and cleaning a polished surface of the substrate by supplying a cleaning liquid having substantially the same pH as the abrasive liquid or similar pH to the abrasive liquid so that a pH of the abrasive liquid attached to the polished surface of the substrate is not rapidly changed.