Patents by Inventor Norio Magome

Norio Magome has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 8013381
    Abstract: A semiconductor device has a semiconductor substrate of a first conductivity type; first to third high-voltage insulated-gate field effect transistors formed on a principal surface of the semiconductor substrate; a first device isolation insulating film that is formed in the semiconductor substrate and isolates the first high-voltage insulated-gate field effect transistor and the second high-voltage insulated-gate field effect transistor from each other; a second device isolation insulating film that is formed in the semiconductor substrate and isolates the first high-voltage insulated-gate field effect transistor and the third high-voltage insulated-gate field effect transistor from each other; a first impurity diffusion layer of the first conductivity type that is formed below the first device isolation insulating film; and a second impurity diffusion layer of the first conductivity type that is formed below the second device isolation insulating film.
    Type: Grant
    Filed: January 28, 2009
    Date of Patent: September 6, 2011
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Norio Magome, Toshifumi Minami, Tomoaki Hatano, Norihisa Arai
  • SEMICONDUCTOR DEVICE
    Publication number: 20090194841
    Abstract: A semiconductor device has a semiconductor substrate of a first conductivity type; first to third high-voltage insulated-gate field effect transistors formed on a principal surface of the semiconductor substrate; a first device isolation insulating film that is formed in the semiconductor substrate and isolates the first high-voltage insulated-gate field effect transistor and the second high-voltage insulated-gate field effect transistor from each other; a second device isolation insulating film that is formed in the semiconductor substrate and isolates the first high-voltage insulated-gate field effect transistor and the third high-voltage insulated-gate field effect transistor from each other; a first impurity diffusion layer of the first conductivity type that is formed below the first device isolation insulating film; and a second impurity diffusion layer of the first conductivity type that is formed below the second device isolation insulating film.
    Type: Application
    Filed: January 28, 2009
    Publication date: August 6, 2009
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Norio MAGOME, Toshifumi Minami, Tomoaki Hatano, Norihisa Arai