Patents by Inventor Norio Murase

Norio Murase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10253253
    Abstract: An object of the present invention is to prepare a fine particle with high durability and high brightness, in which semiconductor nanoparticles are assembled. The present invention provides fluorescent fine particles comprising Cd- and Se-containing semiconductor nanoparticles dispersed in silicon-containing fine particles, wherein the average particle size of the silicon-containing fine particles is 20 to 100 nm, and the number of semiconductor nanoparticles dispersed in the silicon-containing fine particles is 10 or more.
    Type: Grant
    Filed: July 28, 2016
    Date of Patent: April 9, 2019
    Assignee: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Norio Murase, Ping Yang, Masanori Ando
  • Publication number: 20160333265
    Abstract: An object of the present invention is to prepare a fine particle with high durability and high brightness, in which semiconductor nanoparticles are assembled. The present invention provides fluorescent fine particles comprising Cd- and Se-containing semiconductor nanoparticles dispersed in silicon-containing fine particles, wherein the average particle size of the silicon-containing fine particles is 20 to 100 nm, and the number of semiconductor nanoparticles dispersed in the silicon-containing fine particles is 10 or more.
    Type: Application
    Filed: July 28, 2016
    Publication date: November 17, 2016
    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Norio MURASE, Ping YANG, Masanori ANDO
  • Patent number: 8585927
    Abstract: The present invention provides semiconductor-nanoparticle-dispersed small silica glass particles that emit bright fluorescent light with high fluorescence quantum yield and high density, compared to the conventional semiconductor-nanoparticle-dispersed small glass particles, and that have excellent fluorescence intensity stability over time; and a process for preparing the same. The semiconductor-nanoparticle-dispersed silica glass particles have a mean particle size of not less than 10 nanometers and not more than 5 micrometers, and contain a hydrolyzed alkoxide and semiconductor nanoparticles at a concentration of not less than 2×10?5 mol/l and not more than 1×10?2 mol/l. The particles emit fluorescent light with a fluorescence quantum yield (quantum yield) of 25% or more (and 60% or more), when dispersed in a solution.
    Type: Grant
    Filed: September 21, 2006
    Date of Patent: November 19, 2013
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Masanori Ando, Norio Murase, Chunliang Li, Ping Yang
  • Publication number: 20120301971
    Abstract: An object of the present invention is to prepare a fine particle with high durability and high brightness, in which semiconductor nanoparticles are assembled. The present invention provides fluorescent fine particles comprising Cd- and Se-containing semiconductor nanoparticles dispersed in silicon-containing fine particles, wherein the average particle size of the silicon-containing fine particles is 20 to 100 nm, and the number of semiconductor nanoparticles dispersed in the silicon-containing fine particles is 10 or more.
    Type: Application
    Filed: December 17, 2010
    Publication date: November 29, 2012
    Inventors: Norio Murase, Ping Yang, Masanori Ando
  • Patent number: 8287758
    Abstract: The present invention provides a novel fluorescent material which has a luminance higher than that of the conventional rare earth ion-dispersed fluorescent materials and is excellent in light resistance and long-term stability, and also an optical device, such as a high-luminance display panel or lighting equipment, which uses such a fluorescent material. Semiconductor ultrafine particles are characterized by maintaining 50% or more fluorescence quantum yield of photoluminescence when they are kept dispersed in water at 10° C. to 20° C. in air for 5 days. The fluorescent material is obtained by dispersing such semiconductor ultrafine particles in a glass matrix using a sol-gel process.
    Type: Grant
    Filed: January 23, 2004
    Date of Patent: October 16, 2012
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Norio Murase, Chunliang Li
  • Patent number: 8221651
    Abstract: Nanoparticles having a core/shell structure consisting of a core comprising a Group III element and a Group V element at a molar ratio of the Group III element to the Group V element in the range of 1.25 to 3.0, and a shell comprising a Group II element and a Group VI element and having a thickness of 0.2 nm to 4 nm, the nanoparticles having a photoluminescence efficiency of 10% or more and a diameter of 2.5 to 10 nm; a method of producing the water-dispersible nanoparticles and a method of producing a glass matrix having the nanoparticles dispersed therein.
    Type: Grant
    Filed: April 21, 2009
    Date of Patent: July 17, 2012
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Norio Murase, Chunliang Li, Masanori Ando
  • Patent number: 8025816
    Abstract: This invention provides a novel phosphor material that has better brightness than conventional phosphors using dispersed rare earth ions, and that possesses excellent light resistance, temporal stability, and the like, and a light-emitting device with high brightness comprising such phosphor material and an excitation ultraviolet light source corresponding to the properties thereof. A phosphor comprising a silicon-containing solid matrix and semiconductor superfine particles dispersed therein at a concentration of 5×10?4 to 1×10?2 mol/L, said semiconductor superfine particles having a fluorescence quantum yield of 3% or greater and a diameter of 1.5 to 5 nm, and a light-emitting device including said phosphor and a light source for excitation light with an intensity of 3 to 800 W/cm2.
    Type: Grant
    Filed: May 6, 2003
    Date of Patent: September 27, 2011
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Norio Murase, Masanori Ando
  • Publication number: 20100295016
    Abstract: The present invention provides a luminescent fiber, which retains a certain shape with assembled nanoparticles, and a method for producing the luminescent fiber. Specifically, the present invention provides a luminescent fiber comprising silicon and semiconductor nanoparticles having a mean particle size of 2 to 12 nm, the luminescent fiber having a diameter of 20 nm to 2 ?m, a length of 40 nm to 500 ?m, an aspect ratio of 2 to 1,000, and photoluminescence efficiency of not less than 5%.
    Type: Application
    Filed: May 13, 2010
    Publication date: November 25, 2010
    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Norio MURASE, Ping Yang, Masanori Ando
  • Patent number: 7824767
    Abstract: The present invention provides a thin-film fluorescent material in which semiconductor nanoparticles in a stable condition maintain a high fluorescence quantum yield and can be held at a high concentration in a glass matrix. The present invention also provides optical devices using the thin-film fluorescent material, such as high-brightness displays and lighting systems. The present invention relates to a fluorescent material, in which semiconductor nanoparticles with a fluorescence quantum yield of 15% or more and a diameter of 2 to 5 nanometers are dispersed in a glass matrix at a concentration of 5×10?4 mol/l or more and a method for manufacturing the same.
    Type: Grant
    Filed: March 2, 2006
    Date of Patent: November 2, 2010
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Norio Murase, Ping Yang
  • Publication number: 20100252778
    Abstract: An object of the present invention is to reduce the incompleteness of the surface state due to lattice constant and steric hindrance, which was heretofore nearly unavoidable, in the surface treatment of light-emitting semiconductor nanoparticles. The present invention provides an excellent luminescent material that has enhanced photoluminescence efficiency, reduced photoluminescence spectrum width, and increased chemical resistance. Specifically, the present invention provides a luminescent material comprising semiconductor nanoparticles having a mean particle size of 2 to 12 nm and a band gap of 3.8 eV or less, each of the semiconductor nanoparticles being coated with a silicon-containing layer, the semiconductor nanoparticles in the luminescent material having a peak emission wavelength 20 nm or more towards the longer-wavelength side than the peak emission wavelength of the semiconductor nanoparticles alone.
    Type: Application
    Filed: July 25, 2008
    Publication date: October 7, 2010
    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Norio Murase, Ping Yang, Masanori Ando
  • Publication number: 20100129455
    Abstract: The present invention provides fine silicon-containing glass beads each having one or more cavities therein and containing nanoparticles in a glass phase of each of the silicon-containing glass beads, and a method of producing such glass beads, and also provides silicon-containing glass beads containing nanoparticles, which may be identical to or different from the nanoparticles in the glass phase, and a functional material such as pharmaceutical molecules (e.g., materials having fluorescent properties, magnetic properties, drug effects, etc.), and a method of producing such glass beads. The present invention relates to silicon-containing glass beads each having one or more cavities therein and having an average particle diameter of 20 nm to 1 ?m, the silicon-containing glass beads containing nanoparticles A in the silicon-containing glass phase, and also containing a functional material in the cavity.
    Type: Application
    Filed: October 13, 2009
    Publication date: May 27, 2010
    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Norio MURASE, Ping YANG, Masanori ANDO
  • Publication number: 20090315446
    Abstract: The present invention provides nanoparticles having a core/shell structure consisting of a core comprising a Group III element and a Group V element at a molar ratio of the Group III element to the Group V element in the range of 1.25 to 3.0, and a shell comprising a Group II element and a Group VI element and having a thickness of 0.2 nm to 4 nm, the nanoparticles having a photoluminescence efficiency of 10% or more and a diameter of 2.5 to 10 nm; a method of producing the water-dispersible nanoparticles comprising bringing a dispersion of III-V semiconductor nanoparticles in an organic solvent into contact with an aqueous solution of a Group II element-containing compound and a Group VI element-containing compound to thereby transfer the III-V semiconductor nanoparticles of the organic solvent dispersion to the aqueous solution, and then irradiating the aqueous solution with light; and a method of producing a glass matrix having the nanoparticles dispersed therein.
    Type: Application
    Filed: April 21, 2009
    Publication date: December 24, 2009
    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Norio MURASE, Chunliang LI, Masanori ANDO
  • Publication number: 20090108235
    Abstract: The present invention provides semiconductor-nanoparticle-dispersed small silica glass particles that emit bright fluorescent light with high fluorescence quantum yield and high density, compared to the conventional semiconductor-nanoparticle-dispersed small glass particles, and that have excellent fluorescence intensity stability over time; and a process for preparing the same. The semiconductor-nanoparticle-dispersed silica glass particles have a mean particle size of not less than 10 nanometers and not more than 5 micrometers, and contain a hydrolyzed alkoxide and semiconductor nanoparticles at a concentration of not less than 2×10?5 mol/l and not more than 1×10?2 mol/l. The particles emit fluorescent light with a fluorescence quantum yield (quantum yield) of 25% or more (and 60% or more), when dispersed in a solution.
    Type: Application
    Filed: September 21, 2006
    Publication date: April 30, 2009
    Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Masanori Ando, Norio Murase, Chunliang Li, Ping Yang
  • Publication number: 20080213558
    Abstract: The present invention provides a thin-film fluorescent material in which semiconductor nanoparticles in a stable condition maintain a high fluorescence quantum yield and can be held at a high concentration in a glass matrix. The present invention also provides optical devices using the thin-film fluorescent material, such as high-brightness displays and lighting systems. The present invention relates to a fluorescent material, in which semiconductor nanoparticles with a fluorescence quantum yield of 15% or more and a diameter of 2 to 5 nanometers are dispersed in a glass matrix at a concentration of 5×10?4 mol/l or more and a method for manufacturing the same.
    Type: Application
    Filed: March 2, 2006
    Publication date: September 4, 2008
    Inventors: Norio Murase, Ping Yang
  • Publication number: 20070075294
    Abstract: The present invention provides a novel fluorescent material which has a luminance higher than that of the conventional rare earth ion-dispersed fluorescent materials and is excellent in light resistance and long-term stability, and also an optical device, such as a high-luminance display panel or lighting equipment, which uses such a fluorescent material. Semiconductor ultrafine particles are characterized by maintaining 50% or more fluorescence quantum yield of photoluminescence when they are kept dispersed in water at 10° C. to 20° C. in air for 5 days. The fluorescent material is obtained by dispersing such semiconductor ultrafine particles in a glass matrix using a sol-gel process.
    Type: Application
    Filed: January 23, 2004
    Publication date: April 5, 2007
    Inventors: Norio Murase, Chunliang Li
  • Publication number: 20060097624
    Abstract: This invention provides a novel phosphor material that has better brightness than conventional phosphors using dispersed rare earth ions, and that possesses excellent light resistance, temporal stability, and the like, and a light-emitting device with high brightness comprising such phosphor material and an excitation ultraviolet light source corresponding to the properties thereof. A phosphor comprising a silicon-containing solid matrix and semiconductor superfine particles dispersed therein at a concentration of 5×10?4 to 1×10?2 mol/L, said semiconductor superfine particles having a fluorescence quantum yield of 3% or greater and a diameter of 1.5 to 5 nm, and a light-emitting device including said phosphor and a light source for excitation light with an intensity of 3 to 800 W/cm2.
    Type: Application
    Filed: May 6, 2003
    Publication date: May 11, 2006
    Inventors: Norio Murase, Masanori Ando
  • Patent number: 5828595
    Abstract: In a system (apparatus and method) which employs a light absorbent material surrounded by an optically transparent matrix as a recording medium and in which the presence or absence of emission light of a specific wavelength from unity of the light absorbent material is used for optical writing and reading, the light emitted in response to reading light is condensed and spectrally diffracted and the light intensity is detected for each specific wavelength and related to recorded information.
    Type: Grant
    Filed: October 10, 1996
    Date of Patent: October 27, 1998
    Assignee: Director General, Agency of Industrial Science and Technology
    Inventors: Norio Murase, Tetsuo Yazawa
  • Patent number: 5770102
    Abstract: The present invention provides ice nucleating-active materials which are free from problems like corrosiveness against a device owing to the materials used and harmfulness of the materials themselves; and have a function of elevating freezing temperature of water which is effective for releasing an over-cooling state of it, and generates a method for an ice bank system exhibiting a large energy-saving effect. This invention relates to ice nucleating-active materials containing trioctahedral smectites capable of being dispersive in water as effective components, and a method for an ice bank system comprising adding the trioctahedral smectites into a liquid in the ice bank system at a concentration of at least 30 ppm and freezing it by using a freezer.
    Type: Grant
    Filed: February 7, 1997
    Date of Patent: June 23, 1998
    Assignee: Japan as represented by Director General of Agency of Industrial Science and Technology
    Inventors: Kazuo Torii, Hideo Yamamoto, Katuhiro Miyaji, Norio Murase
  • Patent number: 5420846
    Abstract: An information recording medium includes an information recording layer on which at least information is to be recorded by irradiating light, and a light transmission restricting layer which has a plurality of nonlinear transmission characteristics or nonlinear reflection characteristics for the intensity of the light irradiated and which has an optical material for restricting the transmission or reflection of the light according to the respective characteristics when the light is irradiated onto the information recording layer. An information recording and reproducing unit uses the information recording medium and includes an information recording position setting unit for deciding a position at which information is to be recorded on the information recording medium by detecting a direction of an easy magnetization axis.
    Type: Grant
    Filed: February 23, 1993
    Date of Patent: May 30, 1995
    Assignee: Hitachi, Ltd.
    Inventors: Hisataka Sugiyama, Akira Arimoto, Motoyasu Terao, Norio Murase, Kimio Tatsuno, Masahiko Takahashi, Fumiyoshi Kirino, Fumio Kugiya
  • Patent number: 5373491
    Abstract: A wavelength-multiple optical memory is provided which is capable of performing high density recording/reading at room temperature. A large number of cylindrical recording members, each of which is made up of plural portions along a central axis of the cylinder and plural sizes which vary slightly in a direction perpendicular to the central axis, are formed on a substrate. The cylindrical recording members may be of circular cylindrical or elliptical cylindrical shape. It is preferable that recording material layers of the cylindrical recording members have complex refractive indexes which are different from each other. A difference in size of the recording material layers of the circular or elliptical cylinders having sizes closest to each other is preferably in a range of 1/5000 to 1/5 of an average of the sizes, are even more preferably in a range of 1/500 to 1/10. Wavelength-multiple recording is performed by changing a wavelength of a light beam emitted from a light source within a very narrow range.
    Type: Grant
    Filed: May 29, 1992
    Date of Patent: December 13, 1994
    Assignee: Hitachi, Ltd.
    Inventors: Motoyasu Terao, Norio Murase, Shigenori Okamine