Abstract: A lead frame (100) for a semiconductor device is formed by applying nickel plating (102), palladium plating (103), and gold flash plating (104) substantially entirely to lead frame body (101) such as copper thin plate in this order, and further applying silver plating (105) selectively to part of an inner part that is to be enclosed with a package of the semiconductor device. The lead frame (100) may also include a base of the package. The silver plating contributes to an excellent light reflectance and wire bonding efficiency of the inner part, whereas the gold flash plating contributes to an excellent resistance to corrosion and soldering efficiency of an outer part that is outside the package.

Abstract: A data processing unit acquires a review image including a pattern defect on a substrate, compares the review image with a reference image thereby to extract a defect image, the reference image including no pattern defect, and performs an alignment between the review image and a self-layer design pattern image which is generated from design data belonging to the identical layer in a region corresponding to the review image. The data processing unit, then, based on result of the alignment, generates an another-layer design pattern image which is generated from design data belonging to another layer in the region corresponding to the review image, and, based on a synthesized image of the defect image and the another-layer design pattern image, determines the relative position relationship between the pattern defect and a pattern belonging to another layer, and judges the criticality based on the relative position relationship.

Abstract: An image forming method and a charged particle beam apparatus suitable for suppressing the inclination of charging when scanning a two-dimensional area with a charged particle beam. A third scanning line located between a first scanning line and a second scanning line is scanned. After the first, second and third scanning lines have been scanned, a plurality of scanning lines are scanned between the first and third scanning lines and between the second and third scanning lines.

Abstract: A data processing unit acquires a review image including a pattern defect on a substrate, compares the review image with a reference image thereby to extract a defect image, the reference image including no pattern defect, and performs an alignment between the review image and a self-layer design pattern image which is generated from design data belonging to the identical layer in a region corresponding to the review image. The data processing unit, then, based on result of the alignment, generates an another-layer design pattern image which is generated from design data belonging to another layer in the region corresponding to the review image, and, based on a synthesized image of the defect image and the another-layer design pattern image, determines the relative position relationship between the pattern defect and a pattern belonging to another layer, and judges the criticality based on the relative position relationship.

Abstract: A data processing unit acquires a review image including a pattern defect on a substrate, compares the review image with a reference image thereby to extract a defect image, the reference image including no pattern defect, and performs an alignment between the review image and a self-layer design pattern image which is generated from design data belonging to the identical layer in a region corresponding to the review image. The data processing unit, then, based on result of the alignment, generates an another-layer design pattern image which is generated from design data belonging to another layer in the region corresponding to the review image, and, based on a synthesized image of the defect image and the another-layer design pattern image, determines the relative position relationship between the pattern defect and a pattern belonging to another layer, and judges the criticality based on the relative position relationship.

Abstract: A lead frame (100) for a semiconductor device is formed by applying nickel plating (102), palladium plating (103), and gold flash plating (104) substantially entirely to lead frame body (101) such as copper thin plate in this order, and further applying silver plating (105) selectively to part of an inner part that is to be enclosed with a package of the semiconductor device. The lead frame (100) may also include a base of the package. The silver plating contributes to an excellent light reflectance and wire bonding efficiency of the inner part, whereas the gold flash plating contributes to an excellent resistance to corrosion and soldering efficiency of an outer part that is outside the package.

Abstract: According to the pattern search method of the present invention, detection of a detection image region relative to an observation image is performed by a pattern matching. An image whose size is substantially the same as that of the observation image is used as the detection image region. The detection image region is relatively displaced with reference to the observation image, thereby detecting a degree of similarity for a common region which is common to both of the region and the image. Displacement range of the detection image region is set in advance. If area of the common region is larger than a predetermined value, calculating the degree of similarity will be performed.

Abstract: An image forming method and a charged particle beam apparatus suitable for suppressing the inclination of charging when scanning a two-dimensional area with a charged particle beam. A third scanning line located between a first scanning line and a second scanning line is scanned. After the first, second and third scanning lines have been scanned, a plurality of scanning lines are scanned between the first and third scanning lines and between the second and third scanning lines.

Abstract: An image forming method and a charged particle beam apparatus suitable for suppressing the inclination of charging when scanning a two-dimensional area with a charged particle beam. A third scanning line located between a first scanning line and a second scanning line is scanned. After the first, second and third scanning lines have been scanned, a plurality of scanning lines are scanned between the first and third scanning lines and between the second and third scanning lines.

Abstract: A lead frame (100) for a semiconductor device is formed by applying nickel plating (102), palladium plating (103), and gold flash plating (104) substantially entirely to lead frame body (101) such as copper thin plate in this order, and further applying silver plating (105) selectively to part of an inner part that is to be enclosed with a package of the semiconductor device. The lead frame (100) may also include a base of the package. The silver plating contributes to an excellent light reflectance and wire bonding efficiency of the inner part, whereas the gold flash plating contributes to an excellent resistance to corrosion and soldering efficiency of an outer part that is outside the package.

Abstract: A lead frame (100) for a semiconductor device is formed by applying nickel plating (102), palladium plating (103), and gold flash plating (104) substantially entirely to lead frame body (101) such as copper thin plate in this order, and further applying silver plating (105) selectively to part of an inner part that is to be enclosed with a package of the semiconductor device. The lead frame (100) may also include a base of the package. The silver plating contributes to an excellent light reflectance and wire bonding efficiency of the inner part, whereas the gold flash plating contributes to an excellent resistance to corrosion and soldering efficiency of an outer part that is outside the package.

Abstract: A lead frame (100) for a semiconductor device is formed by applying nickel plating (102), palladium plating (103), and gold flash plating (104) substantially entirely to lead frame body (101) such as copper thin plate in this order, and further applying silver plating (105) selectively to part of an inner part that is to be enclosed with a package of the semiconductor device. The lead frame (100) may also include a base of the package. The silver plating contributes to an excellent light reflectance and wire bonding efficiency of the inner part, whereas the gold flash plating contributes to an excellent resistance to corrosion and soldering efficiency of an outer part that is outside the package.

Abstract: A data processing unit acquires a review image including a pattern defect on a substrate, compares the review image with a reference image thereby to extract a defect image, the reference image including no pattern defect, and performs an alignment between the review image and a self-layer design pattern image which is generated from design data belonging to the identical layer in a region corresponding to the review image. The data processing unit, then, based on result of the alignment, generates an another-layer design pattern image which is generated from design data belonging to another layer in the region corresponding to the review image, and, based on a synthesized image of the defect image and the another-layer design pattern image, determines the relative position relationship between the pattern defect and a pattern belonging to another layer, and judges the criticality based on the relative position relationship.

Abstract: An image forming method and a charged particle beam apparatus suitable for suppressing the inclination of charging when scanning a two-dimensional area with a charged particle beam. A third scanning line located between a first scanning line and a second scanning line is scanned. After the first, second and third scanning lines have been scanned, a plurality of scanning lines are scanned between the first and third scanning lines and between the second and third scanning lines.

Abstract: An image forming method and a charged particle beam apparatus suitable for suppressing the inclination of charging when scanning a two-dimensional area with a charged particle beam. A third scanning line located between a first scanning line and a second scanning line is scanned. After the first, second and third scanning lines have been scanned, a plurality of scanning lines are scanned between the first and third scanning lines and between the second and third scanning lines.

Abstract: An image forming method and a charged particle beam apparatus suitable for suppressing the inclination of charging when scanning a two-dimensional area with a charged particle beam. A third scanning line located between a first scanning line and a second scanning line is scanned. After the first, second and third scanning lines have been scanned, a plurality of scanning lines are scanned between the first and third scanning lines and between the second and third scanning lines.

Abstract: A lead frame (100) for a semiconductor device is formed by applying nickel plating (102), palladium plating (103), and gold flash plating (104) substantially entirely to lead frame body (101) such as copper thin plate in this order, and further applying silver plating (105) selectively to part of an inner part that is to be enclosed with a package of the semiconductor device. The lead frame (100) may also include a base of the package. The silver plating contributes to an excellent light reflectance and wire bonding efficiency of the inner part, whereas the gold flash plating contributes to an excellent resistance to corrosion and soldering efficiency of an outer part that is outside the package.

Abstract: According to the pattern search method of the present invention, detection of a detection image region relative to an observation image is performed by a pattern matching. An image whose size is substantially the same as that of the observation image is used as the detection image region. The detection image region is relatively displaced with reference to the observation image, thereby detecting a degree of similarity for a common region which is common to both of the region and the image. Displacement range of the detection image region is set in advance. If area of the common region is larger than a predetermined value, calculating the degree of similarity will be performed.