Patents by Inventor Noritaka Muraki
Noritaka Muraki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9112084Abstract: Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlX1Ga1-X1)As (0?X1?1) and a barrier layer which comprises a composition expressed by the composition formula of (AlX2Ga1-X2)As (0<X2?1), and a first clad layer and a second clad layer, between both of which the active layer is sandwiched, wherein the first clad layer and the second clad layer comprise a composition expressed by the composition formula of (AlX3Ga1-X3)Y1In1-Y1P (0?X3?1, 0<Y1?1); a current diffusion layer formed on the light-emitting section; and a functional substrate bonded to the current diffusion layer.Type: GrantFiled: January 10, 2014Date of Patent: August 18, 2015Assignee: SHOWA DENKO K.K.Inventors: Noriyuki Aihara, Noriyoshi Seo, Noritaka Muraki, Ryouichi Takeuchi
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Patent number: 8754398Abstract: A light-emitting diode, including a light emitting section including an active layer having a quantum well structure in which well layers having the composition: (InX1Ga1-X1)As (0?X1?1) and barrier layers having the composition: (AlX2Ga1-X2)As (0?X2?1) are alternately laminated, first guide and second guide layers paired to sandwich the active layer and having the composition: (AlX3Ga1-X3)As (0?X3?1), and first cladding and second cladding layers paired to sandwich the active layer via the first guide layer and the second guide layer, respectively; a current diffusion layer formed on the light emitting section; and a functional substrate bonded to the current diffusion layer; wherein the first cladding layer and the second cladding layer have the composition: (AlX4Ga1-X4)YIn1-YP (0?X4?1, 0<Y?1); and a light-emitting diode lamp and a lighting device using the same.Type: GrantFiled: January 20, 2011Date of Patent: June 17, 2014Assignee: Showa Denko K.K.Inventors: Noriyuki Aihara, Noriyoshi Seo, Noritaka Muraki
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Publication number: 20140124733Abstract: Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlX1Ga1-X1) As (0?X1?1) and a barrier layer which comprises a composition expressed by the composition formula of (AlX2Ga1-X2)As (0<X2?1), and a first clad layer and a second clad layer, between both of which the active layer is sandwiched, wherein the first clad layer and the second clad layer comprise a composition expressed by the composition formula of (AlX3Ga1-X3)Y1In1-Y1P (0?X3?1, 0<Y1?1); a current diffusion layer formed on the light-emitting section; and a functional substrate bonded to the current diffusion layer.Type: ApplicationFiled: January 10, 2014Publication date: May 8, 2014Applicant: SHOWA DENKO K.K.Inventors: Noriyuki AIHARA, Noriyoshi SEO, Noritaka MURAKI, Ryouichi TAKEUCHI
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Patent number: 8659004Abstract: Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlX1 Ga1-X1) As (0?X1?1) and a barrier layer which comprises a composition expressed by the composition formula of (AlX2 Ga1-X2) As (0<2?1), and a first clad layer and a second clad layer, between both of which the active layer is sandwiched, wherein the first clad layer and the second clad layer comprise a composition expressed by the composition formula of (AlX3Ga1-X)Y1 In1-Y1 P (0?X3?1, 0<Y1?1); a current diffusion layer formed on the light-emitting section; and a functional substrate bonded to the current diffusion layer.Type: GrantFiled: September 15, 2010Date of Patent: February 25, 2014Assignee: Showa Denko K.K.Inventors: Noriyuki Aihara, Noriyoshi Seo, Noritaka Muraki, Ryouichi Takeuchi
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Publication number: 20120305890Abstract: A light-emitting diode, including a light emitting section including an active layer having a quantum well structure in which well layers having the composition: (InX1Ga1-X1)As (0?X1?1) and barrier layers having the composition: (AlX2Ga1-X2)As (0?X2?1) are alternately laminated, first guide and second guide layers paired to sandwich the active layer and having the composition: (AlX3Ga1-X3)As (0?X3?1), and first cladding and second cladding layers paired to sandwich the active layer via the first guide layer and the second guide layer, respectively; a current diffusion layer formed on the light emitting section; and a functional substrate bonded to the current diffusion layer; wherein the first cladding layer and the second cladding layer have the composition: (AlX4Ga1-X4)YIn1-YP (0?X4?1, 0<Y?1); and a light-emitting diode lamp and a lighting device using the same.Type: ApplicationFiled: January 20, 2011Publication date: December 6, 2012Applicant: SHOWA DENKO K.K.Inventors: Noriyuki Aihara, Noriyoshi Seo, Noritaka Muraki
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Patent number: 8258541Abstract: A gallium nitride-based compound semiconductor light-emitting device including a positive electrode having openings, which is excellent in light extraction efficiency. The gallium nitride-based compound semiconductor light-emitting device includes a substrate; an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer, the layers being formed of a gallium nitride-based compound semiconductor and being stacked in this order on the substrate; a positive electrode which is provided so as to contact the p-type semiconductor layer; and a negative electrode which is provided so as to contact the n-type semiconductor layer, where the positive electrode is a positive electrode having openings, and at least a portion of the surface of the p-type semiconductor layer corresponding to the openings are roughened surface derived from spherical particulates.Type: GrantFiled: December 13, 2006Date of Patent: September 4, 2012Assignee: Showa Denko K.K.Inventors: Noritaka Muraki, Hironao Shinohara
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Publication number: 20120168717Abstract: Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlX1Ga1-X1)As (0?X1?1) and a barrier layer which comprises a composition expressed by the composition formula of (AlX2Ga1-X2)As (0<X2?1), and a first clad layer and a second clad layer, between both of which the active layer is sandwiched, wherein the first clad layer and the second clad layer comprise a composition expressed by the composition formula of (AlX3Ga1-X3)Y1In1-Y1P (0?X3?1, 0<Y1?1); a current diffusion layer formed on the light-emitting section; and a functional substrate bonded to the current diffusion layer.Type: ApplicationFiled: September 15, 2010Publication date: July 5, 2012Applicant: SHOWA DENKO K.K.Inventors: Noriyuki Aihara, Noriyoshi Seo, Noritaka Muraki, Ryouichi Takeuchi
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Publication number: 20120168782Abstract: Disclosed is a light-emitting diode, which has an infrared emission wavelength of 700 nm or more, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section (7), which includes an activity layer, wherein the activity layer emits infrared light and includes a multilayer including a well layer (12) which is made from a composition expressed by the composition formula of (AlXGa1-X) As (0?x?1) and a barrier layer (13); a current diffusion layer (8) formed on the light-emitting section (7); and a functional substrate (3) bonded to the current diffusion layer (8).Type: ApplicationFiled: September 13, 2010Publication date: July 5, 2012Applicant: SHOWA DENKO K.K.Inventors: Noriyuki Aihara, Ryouichi Takeuchi, Noritaka Muraki
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Patent number: 8188495Abstract: An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having excellent light extraction efficiency and a high emission output in which a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length. The present light emitting device comprises a substrate and a gallium nitride-based compound semiconductor layer formed on the substrate, wherein a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length, and a side surface of the gallium nitride-based compound semiconductor layer is not vertical to a principal surface of the substrate.Type: GrantFiled: June 8, 2007Date of Patent: May 29, 2012Assignee: Showa Denko K.K.Inventors: Noritaka Muraki, Munetaka Watanabe
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Patent number: 8115212Abstract: An object of the present invention is to provide a transparent positive electrode for use in a face-up-type chip which can emit intense light even using a low drive voltage. The inventive positive electrode for a semiconductor light-emitting device comprises a transparent electrode formed on a semiconductor layer and a bonding pad electrode formed on the transparent electrode, wherein the bonding pad electrode has a reflecting layer that is in contact with at least the transparent electrode.Type: GrantFiled: July 28, 2005Date of Patent: February 14, 2012Assignee: Showa Denko K.K.Inventors: Hisayuki Miki, Noritaka Muraki, Munetaka Watanabe
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Publication number: 20110297978Abstract: The invention provides a high luminance light-emitting diode capable of reducing the loss of light emitted from LED chips in a package and also capable of improving the light extraction efficiency from the package, wherein the light-emitting diode (1) includes a compound semiconductor layer (2) including a light-emitting portion (8) having a light-emitting layer (9) and a substrate (3), in which an external reflection layer (4) having a reflectivity higher than that of the substrate (3) is provided on a side surface of the substrate (3).Type: ApplicationFiled: January 21, 2010Publication date: December 8, 2011Applicant: SHOWA DENKO K.K.Inventors: Ryouichi Takeuchi, Noritaka Muraki
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Patent number: 8049243Abstract: This gallium nitride-based compound semiconductor light emitting device includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are composed of gallium nitride-based compound semiconductors and are deposited in that order on a substrate, and further includes a negative electrode and a positive electrode that are in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively, wherein the positive electrode has a translucent electrode composed of a three-layer structure including a contact metal layer that contacts at least the p-type semiconductor layer, a current diffusion layer provided on the contact metal layer and having conductivity greater than that of the contact metal layer, and a bonding pad layer provided on the current diffusion layer, and a mixed positive electrode-metal layer including a metal that forms the contact metal layer is present in a positive electrode side surface of the p-type semiconductor layer.Type: GrantFiled: May 19, 2005Date of Patent: November 1, 2011Assignee: Showa Denko K.K.Inventors: Koji Kamei, Munetaka Watanabe, Noritaka Muraki, Yasushi Ohno
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Patent number: 7947995Abstract: An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having superior light extraction efficiency and light distribution uniformity. The inventive gallium nitride-based compound semiconductor light emitting device comprises a substrate and a gallium nitride-based compound semiconductor layer stacked on the substrate, wherein on at least one lateral surface of the light emitting device, the bottom (substrate side) of the semiconductor layer is a reverse taper inclined 5 to 85 degrees relative to the substrate main surface and the top of the semiconductor layer is a forward taper inclined 95 to 175 degrees relative to the substrate main surface.Type: GrantFiled: November 8, 2007Date of Patent: May 24, 2011Assignee: Showa Denko K.K.Inventors: Noritaka Muraki, Naoki Fukunaga
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Patent number: 7875474Abstract: The invention provides a gallium nitride based compound semiconductor light emitting device with excellent light extracting efficiency and its production method. A light emitting device, obtained from a gallium nitride based compound semiconductor, includes a substrate; a n-type semiconductor layer 13, a light emitting layer 14, and a p-type semiconductor layer 15, sequentially stacked on a substrate 11; a light-permeable positive electrode 16 stacked on the p-type semiconductor layer 15; a positive electrode bonding pad 17 provided on the light-permeable positive electrode 16; and a negative electrode bonding pad provided 18 on the n-type semiconductor layer 13, wherein a disordered uneven surface formed at least on a part of the surface 15a of the p-type semiconductor layer 15.Type: GrantFiled: September 5, 2006Date of Patent: January 25, 2011Assignee: Show A Denko K.K.Inventors: Noritaka Muraki, Hironao Shinohara, Hiroshi Osawa
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Patent number: 7875896Abstract: An object of the present invention is to provide a positive electrode having high transparency, low contact resistance and excellent current diffusibility and not requiring electron beam irradiation, high-temperature annealing or heat treatment, for alloying, in an oxygen atmosphere. The inventive transparent positive electrode for gallium nitride-based compound semiconductor light-emitting devices comprises a contact metal layer in contact with a p-type semiconductor layer, a current diffusing layer on the contact metal layer, the current diffusing layer having an electrical conductivity larger than that of the contact metal layer, and a bonding pad layer on the current diffusing layer.Type: GrantFiled: April 28, 2005Date of Patent: January 25, 2011Assignee: Showa Denko K.K.Inventors: Munetaka Watanabe, Noritaka Muraki, Koji Kamei, Yasushi Ohno
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Patent number: 7847314Abstract: It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material.Type: GrantFiled: September 5, 2006Date of Patent: December 7, 2010Assignee: Showa Denko K.K.Inventors: Hironao Shinohara, Hisayuki Miki, Noritaka Muraki
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Publication number: 20100230714Abstract: A method for producing a gallium nitride based compound semiconductor light emitting device that is excellent in terms of light emission efficiency and is also capable of operating at a low driving voltage, a gallium nitride based compound semiconductor light emitting device, and a lamp using the device are provided, and the method for producing a gallium nitride based compound semiconductor light emitting device includes a first crystal growth step in which an n-type semiconductor layer 13, a light emitting layer 14, and a first p-type semiconductor layer 15 which are formed of a gallium nitride based compound semiconductor are laminated in this order on a substrate 11; and a second crystal growth step in which a second p-type semiconductor layer 16 formed of a gallium nitride based compound semiconductor is further laminated thereon; and also has an uneven pattern forming step in which an uneven pattern is formed on the surface of the first p-type semiconductor layer 15 before the first crystal growth stepType: ApplicationFiled: March 23, 2007Publication date: September 16, 2010Applicant: SHOWA DENKO K.K.Inventors: Hironao Shinohara, Noritaka Muraki, Hiroshi Osawa
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Publication number: 20100176418Abstract: An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having superior light extraction efficiency and light distribution uniformity. The inventive gallium nitride-based compound semiconductor light emitting device comprises a substrate and a gallium nitride-based compound semiconductor layer stacked on the substrate, wherein on at least one lateral surface of the light emitting device, the bottom (substrate side) of the semiconductor layer is a reverse taper inclined 5 to 85 degrees relative to the substrate main surface and the top of the semiconductor layer is a forward taper inclined 95 to 175 degrees relative to the substrate main surface.Type: ApplicationFiled: November 8, 2007Publication date: July 15, 2010Applicant: SHOWA DENKO K.K.Inventors: Noritaka Muraki, Naoki Fukunaga
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Publication number: 20090267103Abstract: The invention provides a gallium nitride based compound semiconductor light emitting device with excellent light extracting efficiency and its production method. A light emitting device, obtained from a gallium nitride based compound semiconductor, includes a substrate; a n-type semiconductor layer 13, a light emitting layer 14, and a p-type semiconductor layer 15, sequentially stacked on a substrate 11; a light-permeable positive electrode 16 stacked on the p-type semiconductor layer 15; a positive electrode bonding pad 17 provided on the light-permeable positive electrode 16; and a negative electrode bonding pad provided 18 on the n-type semiconductor layer 13, wherein a disordered uneven surface formed at least on a part of the surface 15a of the p-type semiconductor layer 15.Type: ApplicationFiled: September 5, 2006Publication date: October 29, 2009Applicant: SHOWA DENKO K.K.Inventors: Noritaka Muraki, Hironao Shinohara, Hiroshi Osawa
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Publication number: 20090212319Abstract: An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having excellent light extraction efficiency and a high emission output in which a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length. The present light emitting device comprises a substrate and a gallium nitride-based compound semiconductor layer formed on the substrate, wherein a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length, and a side surface of the gallium nitride-based compound semiconductor layer is not vertical to a principal surface of the substrate.Type: ApplicationFiled: June 8, 2007Publication date: August 27, 2009Applicant: SHOWA DENKO K.K.Inventors: Noritaka Muraki, Munetaka Watanabe