Abstract: According to one embodiment, a memory element includes: a first electrode layer; a second electrode layer; and a memory layer provided between the first electrode layer and the second electrode layer, and the memory layer including a plurality of first oxide layers in a second oxide layer, a resistivity of each of the plurality of first oxide layers being higher than a resistivity of the second oxide layer.

Abstract: A resistance change element includes a first conductive layer, a second conductive layer, and a memory layer. The memory layer is provided between the first conductive layer and the second conductive layer. The memory layer is capable of reversibly transitioning between a first state and a second state due to at least one of a voltage and a current supplied via the first conductive layer and the second conductive layer. A resistance of the second state is higher than a resistance of the first state. The memory layer includes niobium oxide. One of a (100) plane, a (010) plane, and a (110) plane of the memory layer is oriented in a stacking direction from the first conductive layer toward the second conductive layer.

Abstract: According to one embodiment, a memory element includes: a first electrode layer; a second electrode layer; and a memory layer provided between the first electrode layer and the second electrode layer, and the memory layer including a plurality of first oxide layers in a second oxide layer, a resistivity of each of the plurality of first oxide layers being higher than a resistivity of the second oxide layer.

Abstract: A resistance change element includes a first conductive layer, a second conductive layer, and a memory layer. The memory layer is provided between the first conductive layer and the second conductive layer. The memory layer is capable of reversibly transitioning between a first state and a second state due to at least one of a voltage and a current supplied via the first conductive layer and the second conductive layer. A resistance of the second state is higher than a resistance of the first state. The memory layer includes niobium oxide. One of a (100) plane, a (010) plane, and a (110) plane of the memory layer is oriented in a stacking direction from the first conductive layer toward the second conductive layer.

Abstract: According to one embodiment, in a phase change optical disk which has a substrate and a multi-layered including an interference film, phase change recording film, interface film, and reflecting film, and in which information is reversibly recorded in or erased from the recording film by using light, an element (e.g., Ge or Te) forming the phase change recording film has segregation or a concentration distribution in the thickness direction of the recording film from a portion in contact with the phase change recording film.

Abstract: A semiconductor device includes an interlayer insulating film formed above a semiconductor substrate. The interlayer insulating film has a concave portion. A barrier metal layer is formed along a bottom and a sidewall of the concave portion. The barrier metal layer has a first portion provided along the sidewall of the concave portion and a second portion provided along the bottom of the concave portion. A metal wiring layer is formed in the concave portion via the barrier metal layer. The first portion of the barrier metal layer is composed of a titanium nitride layer whose titanium content is more than 50 at %, and the second portion of the barrier metal layer is composed of a titanium nitride layer whose titanium content is relatively larger than the titanium content of the first portion or of a Ti layer.

Abstract: A phase-change optical recording medium has a recording film that brings about reversible phase-change between a crystalline phase and an amorphous phase upon irradiation with light and an interface film formed in contact with at least one surface of the recording film and comprising hafnium (Hf), silicon (Si), oxygen (O) and carbon (C).

Abstract: In a single-sided, recordable/rewritable phase change optical recording medium having one or more layers, an interface layer adjacent to a phase change optical recording film contains at least Zr (zirconium), O (oxygen), and N (nitrogen), and further contains one or both of Y (yttrium) and Nb (niobium).

Abstract: A Phase-change optical recording media includes a recording film that causes reversible phase-change between a crystalline phase and an amorphous phase on irradiation with light, and an interface film formed in contact with at least one surface of the recording film and containing Hf (hafnium), O (oxygen) and N (nitrogen).

Abstract: A phase-change optical recording medium has a first information layer including a phase-change optical recording film arranged in a position close to the light incident side, a second information layer including another phase-change optical recording film arranged in a position remote from the light incident side and an interlayer separating film arranged between the first information layer and the second information layer, in which at least one of the first information layer and the second information layer includes a noise reduction film in contact with the interlayer separating film. The noise reduction film is formed of SiOx (1?x?2) or SiOC.

Abstract: According to one embodiment, in an information recording medium in which letting H1 (nm) a groove depth of a first substrate on which a first recording layer is formed, H2 (nm) a groove depth of a second substrate on which a second recording layer is formed, H11 (nm) a thickness of a first dye layer at a land area, H12 (nm) a thickness of the first dye layer at a groove bottom area, H21 (nm) a thickness of a second dye layer at a land area, and H22 (nm) a thickness of the second dye layer at a groove bottom area, the groove depth H1 of the first substrate and the groove depth H2 of the second substrate satisfy |H11?H12|=?, |H21?H22|=?, ?/8n?H1????/3n, and ?/8n?H2????/3n.

Abstract: A phase-change optical recording medium has a phase-change recording film to which recording and erasure can be reversibly performed by irradiation with light, and at least one dielectric film formed of a SiOC film containing Si, O and C, and having a carbon concentration within a range of between 0.1 and 30 atomic %.

Abstract: A phase-change optical recording medium has a phase-change recording film to which recording and erasure can be reversibly performed by irradiation with light, and at least one dielectric film formed of a SiOC film containing Si, O and C, and having a carbon concentration within a range of between 0.1 and 30 atomic %.

Abstract: According to one embodiment, in a phase-change optical disk which has a substrate and a stacked structure including an interference film, a phase-change recording film, an interface film, and a reflecting film and which enables the recording film to be recorded into or erased from reversibly with light, the elements constituting the recording film have a segregation or a concentration distribution in the direction of the thickness of the recording film from a region in contact with the phase-change recording film, or in the in-plane direction (or in the direction perpendicular to the thickness) of the recording film.

Abstract: According to one embodiment, there is provided an optical disk including a substrate layer having a refractive index of 1.50 to 1.70 and a thickness X (?m) equal to or greater than f (n)?13 ?m, a first information layer formed on the substrate layer, an adhesive layer formed on the first information layer and having a thickness Y (?m) equal to or greater than 20 ?m, and a second information layer formed on the adhesive layer, wherein X+Y?f (n)+30 ?m and f(n)<X+Y/2 are satisfied and f (n) is given by the formula f (n)=(A1×n3)(n2+A2)/(n2?1)(n2+A3)×1000 (?m), where “n” is a refractive index of the substrate layer, A1 is 0.26200, A2 is ?0.32400, and A3 is 0.00595.

Abstract: An optical disk including first information layer having first guide grooves consisting of first protrusive flat portion having first width and first recessed flat portion having a second width having first height difference from the first protrusive flat portion, the first information layer being formed on the transparent substrate layer, second information layer having second guide grooves consisting of second protrusive flat portion having third width formed on second recessed flat portion having fourth width having second height difference, the second information layer, wherein cycle P (?m) of the first and second guide grooves has value ranging from 0.35 ?m to 0.8 ?m and has relationship of Q1=2Z1/(P?X1?Y1), Q2=2Z2/(P?X2?Y2), 0.9<Q2/Q1<1.5, and 1<X1/Y1<4, 0.25<X2/Y2<1 is satisfied.

Abstract: An optical disk has transparent substrate layer provided at light incidence side, first information layer which has first groove of first depth, adhesive layer provided on the first information layer, and second information layer which has second groove of second depth that is deeper than the first depth, and irreversibly records information therein, wherein the first depth and the second depth are ?/2n or less, the width of the first and second grooves is 0.3 ?m or less, the track pitch of the first and second grooves is 0.45 ?m or less, the first and second information layers include organic dye material having light absorption in the range of the wavelength ? of laser beam for use in recording and reproducing information from 390 nm to 420 nm.

Abstract: According to one embodiment, in a phase change optical disk which has a substrate and a multi-layered including an interference film, phase change recording film, interface film, and reflecting film, and in which information is reversibly recorded in or erased from the recording film by using light, an element (e.g., Ge or Te) forming the phase change recording film has segregation or a concentration distribution in the thickness direction of the recording film from a portion in contact with the phase change recording film.

Abstract: A phase-change optical recording medium has a recording film that brings about reversible phase-change between a crystalline phase and an amorphous phase upon irradiation with light and an interface film formed in contact with at least one surface of the recording film and comprising hafnium (Hf), silicon (Si), oxygen (O) and carbon (C).

Abstract: A phase-change optical recording medium has a recording film that brings about reversible phase-change between a crystalline phase and an amorphous phase upon irradiation with light and an interface film formed in contact with at least one surface of the recording film and comprising hafnium (Hf), silicon (Si), oxygen (O) and carbon (C).