Abstract: An electronic device comprising a substrate having a frame, a metal lead and an electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film or wherein pores at the surface of the organic resin are filled within an inactive gas such as argon because of a plasma treatment of the resin surface with the inactive gas whereby impurities are prevented from entering into the organic resin through the pores.

Abstract: An electronic device comprising a substrate having a frame, a metal lead and an electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film or wherein pores at the surface of the organic resin are filled within an inactive gas such as argon because of a plasma treatment of the resin surface with the inactive gas whereby impurities are prevented from entering into the organic resin through the pores.

Abstract: A microwave-assisted plasma processing apparatus has a reaction chamber in which a substrate holder is provided to support a substrate to be treated. The holder is formed congruent with the inside of reaction chamber and located to substantially separate a reaction space in the reaction chamber save for a narrow clearance therebetween through which exhausted gas passes from said reaction space into said auxiliary space. By this structure, high density plasmas can be formed in the reaction chamber without substantial loss of input microwave energy.

Abstract: A novel primary or secondary battery whose active material for the negative electrode is composed of metallic gallium, gallium alloys or gallium oxide has first come into the world.Gallium has an electrochemical equivalent of 23.24, which is smaller than those of zinc (32.70) and cadmium (56.21). This indicates that when used as an active material for the negative electrode in batteries, gallium has larger capacity per unit mass than zinc and cadmium by respective factors of ca. 1.4 and 2.4. The potential of the reaction; Ga+6OH.sup.- =GaO.sub.3.sup.3- +3H.sub.2 O+3e.sup.- is obviously less noble than the voltage of hydrogen evolution and this means that a high-potential battery can be made. Due to the high hydrogen overvoltage of gallium, gallium ions in the solution can be precipitated as metallic gallium by electrodeposition. As a further advantage, no dendrite formation occurs during the electrodeposition unlike in the case of zinc.

Abstract: A microwave-assisted plasma processing apparatus has a reaction chamber in which a substrate holder is provided to support a substrate to be treated. The holder is formed congruent with the inside of reaction chamber and located to substantially separate a reaction space in the reaction chamber save for a narrow clearance therebetween through which exhausted gas passes from said reaction space into said auxiliary space. By this structure, high density plasmas can be formed in the reaction chamber without substantial loss of input microwave energy.

Abstract: Carbonaceous films are coated on a surface by chemical vapor reation. In advance of the deposition of carbonaceous film, a silicon nitride film as coated on the surface to prevent interdiffusion between the carbonaceous film and the underlying surface.

Abstract: An electronic device comprising a substrate having a frame, a metal lead and electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film.

Abstract: An improved electric device and manufacturing method for the same are described. The device is for example an IC chip clothed in moulding. In advance of the moulding process, the IC chip is coated with silicon nitride in order to protect the IC chip from moisture invaded through cracks or gaps. The coating of silicon nitride is carried out by plasma CVD. Particularly, an AC voltage is applied to the IC chip during deposition for the purpose of obtaining an excellent property of the silicon nitride coating.

Abstract: An improved apparatus and method for depositing thin films on a substrate. The apparatus utilizes two types of energy input. A pair of electrodes are provided in a reaction chamber and supplied with first AC electric energy at 1 to 100 MHz for generating a plasma gas in a reaction chamber therebetween. The substrate is mounted on a substrate holder to which second electric energy is supplied.

Abstract: An electrophotographic photoconductor comprises an electroconductive substrate, an organic photoconductive layer formed on the electroconductive substrate, and a protective layer formed on the organic photoconductive layer, comprising carbon or a carbon-based material as its main component, in which the difference in the Vickers hardness between the organic photoconductive layer and the protective layer is 2500 Kg/mm.sup.2 or less, and the oxygen concentration at the interface or in the vicinity of the interface between the organic photoconductive layer and the protective layer is 1 atom % or less.

Abstract: Plasma CVD method and apparatus are described. The apparatus comprises a vacuum chamber in which two pairs of electrodes are provided. A high frequency voltage is applied to one of the pairs in order to produce a plasma from a reactive gas in the chamber. A substrate to be coated is located between the other of the pairs. A relatively low frequency voltage is applied to the other pair of electrodes. By virtue of the low frequency voltage, the substrate is exposed to the bombardment of ions of the plasma during deposition. The bombardment functions to remove relatively soft portions of the depositing material.

Abstract: A solar cell comprises a plurality of series connected photoelectric conversion structures formed on a substrate. The conversion structure consists of a first semiconductor film on a P-type, an intrinsic semiconductor film formed on the first semiconductor film such that one end thereof extends beyond an end of the first semiconductor film and a second semiconductor film of a second, opposite conductivity type formed on the intrinsic semiconductor film such that one end thereof extends beyond the extended end of the intrinsic semiconductor film and makes direct electrical contact with an end of the first semiconductor film of the adjacent structure.

Abstract: An improved electric device and manufacturing method for the same are described. The device is, for example, an IC chip clothed with moulding. In advance of the moulding process, the IC chip is coated with silicon nitride in order to protect the IC chip from moisture invaded through cracks or gaps. The coating of silicon nitride is carried out after cleaning the surface of the IC chip by plasma CVD.

Abstract: An improved method for manufacturing uniform films or etching uniformly on a plurality of substrates is shown. The substrates are vertically placed in a reaction chamber so as to be treated at once. A chemical vapor reaction takes place by virtue of a high frequency electric power which is modulated in its amplitude. By this modulation, the deposition or etching can be carried out over the surface of a susbtrate.