Abstract: A measurement device includes a plurality of slits, a beam current measurement unit provided at a position away from the slits in a beam traveling direction, and a measurement control unit. The beam current measurement unit is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in a first direction perpendicular to the beam traveling direction. The slits are disposed to be spaced apart in the first direction such that the first direction coincides with a slit width direction and are configured to be movable in the first direction. The measurement control unit acquires a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction with the beam current measurement unit while moving the slits in the first direction.

Abstract: A beamline device includes a deflection device deflecting an ion beam in a first direction perpendicular to a beam traveling direction by applying at least one of an electric field and a magnetic field to the ion beam. A slit is disposed such that the first direction coincides with a slit width direction. A beam current measurement device is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in the first direction. A control device calculates angle information in the first direction on the ion beam by acquiring a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction by the beam current measurement device while changing a deflection amount of the ion beam in the first direction with the deflection device.

Abstract: A measurement device includes a plurality of slits, a beam current measurement unit provided at a position away from the slits in a beam traveling direction, and a measurement control unit. The beam current measurement unit is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in a first direction perpendicular to the beam traveling direction. The slits are disposed to be spaced apart in the first direction such that the first direction coincides with a slit width direction and are configured to be movable in the first direction. The measurement control unit acquires a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction with the beam current measurement unit while moving the slits in the first direction.

Abstract: A beamline device includes a deflection device deflecting an ion beam in a first direction perpendicular to a beam traveling direction by applying at least one of an electric field and a magnetic field to the ion beam. A slit is disposed such that the first direction coincides with a slit width direction. A beam current measurement device is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in the first direction. A control device calculates angle information in the first direction on the ion beam by acquiring a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction by the beam current measurement device while changing a deflection amount of the ion beam in the first direction with the deflection device.

Abstract: An ion beam measuring device includes: a mask that is used for shaping an original ion beam into a measuring ion beam including a y beam part elongated in a y direction that is perpendicular to a traveling direction of the ion beam and an x beam part elongated in an x direction that is perpendicular to the traveling direction and the y direction; a detection unit that is configured to detect an x-direction position of the y beam part and a y-direction position of the x beam part; and a beam angle calculating unit that is configured to calculate an x-direction beam angle using the x-direction position and a y-direction beam angle using the y-direction position.

Abstract: Provided is a beam irradiation apparatus including: a beam scanner that is configured such that a charged particle beam is reciprocatively scanned in a scanning direction; a measurement device that is capable of measuring an angular component of charged particles incident into a region of a measurement target; and a data processor that calculates effective irradiation emittance of the charged particle beam using results measured by the measurement device. The measurement device measures a time dependent value for angular distribution of the charged particle beam. The data processor transforms time information included in the time dependent value for the angular distribution to position information and thus calculates the effective irradiation emittance. The effective irradiation emittance represents emittance of a virtual beam bundle, the virtual beam bundle being formed by summing portions of the charged particle beam which are incident into the region of the measurement target.

Abstract: An ion implantation apparatus includes a beam scanner, a beam measurement unit that is able to measure an ion irradiation amount distribution in a beam scanning direction at a wafer position, and a control unit that outputs a control waveform to the beam scanner for scanning an ion beam. The control unit includes an output unit that outputs a reference control waveform to the beam scanner, an acquisition unit that acquires the ion irradiation amount distribution measured for the ion beam scanned based on the reference control waveform from a beam measurement unit, and a generation unit that generates a correction control waveform by using the acquired ion irradiation amount distribution. The control unit outputs the correction control waveform so that the ion irradiation amount distribution becomes a target distribution and the ion irradiation amount distribution per unit time becomes a target value.

Abstract: Provided is a beam irradiation apparatus including: a beam scanner that is configured such that a charged particle beam is reciprocatively scanned in a scanning direction; a measurement device that is capable of measuring an angular component of charged particles incident into a region of a measurement target; and a data processor that calculates effective irradiation emittance of the charged particle beam using results measured by the measurement device. The measurement device measures a time dependent value for angular distribution of the charged particle beam. The data processor transforms time information included in the time dependent value for the angular distribution to position information and thus calculates the effective irradiation emittance. The effective irradiation emittance represents emittance of a virtual beam bundle, the virtual beam bundle being formed by summing portions of the charged particle beam which are incident into the region of the measurement target.

Abstract: An ion implantation apparatus includes a beam scanner, a beam measurement unit that is able to measure an ion irradiation amount distribution in a beam scanning direction at a wafer position, and a control unit that outputs a control waveform to the beam scanner for scanning an ion beam. The control unit includes an output unit that outputs a reference control waveform to the beam scanner, an acquisition unit that acquires the ion irradiation amount distribution measured for the ion beam scanned based on the reference control waveform from a beam measurement unit, and a generation unit that generates a correction control waveform by using the acquired ion irradiation amount distribution. The control unit outputs the correction control waveform so that the ion irradiation amount distribution becomes a target distribution and the ion irradiation amount distribution per unit time becomes a target value.

Abstract: An ion beam measuring device includes: a mask that is used for shaping an original ion beam into a measuring ion beam including a y beam part elongated in a y direction that is perpendicular to a traveling direction of the ion beam and an x beam part elongated in an x direction that is perpendicular to the traveling direction and the y direction; a detection unit that is configured to detect an x-direction position of the y beam part and a y-direction position of the x beam part; and a beam angle calculating unit that is configured to calculate an x-direction beam angle using the x-direction position and a y-direction beam angle using the y-direction position.

Abstract: A floating-point arithmetic processing apparatus has a circuit for generating a limit value for normalization shift by subtracting an exponent of the minimum value of a normalized number from a value of an exponent of an intermediate result, and a circuit for generating, as a normalization shift number, smaller one of a shift number necessary for making the mantissa of the intermediate result a normalized number and the limit value for normalization shift. The floating-point arithmetic processing apparatus further has a circuit having a circuit for detecting a condition for overflow before the rounding process and a circuit for generating a value in the case of overflow, so that a predetermined value is delivered as a final result only when the overflow condition is detected before the rounding process but in the other case, a result obtained by performing the normalization process and the rounding process is delivered.

Abstract: To offer a floating-point addition/subtraction processing apparatus and a method thereof, capable of shortening the computation time, the floating-point calculation processing apparatus includes an approximate shift mount predicting unit for predicting a shift amount for normalization by using the input floating-point data to be addition/subtraction processed within an error of 1 bit, a shift error detecting unit for detecting a difference between the predicted shift amount and a correct shift amount, and an bit shifter for correcting a result, obtained by normalization using the predicted shift amount, by the detected difference of the two shift amounts, wherein a round-off determination and a shift amount calculation are processed in parallel before a normalization shift processing is executed.

Abstract: A pass transistor type selector circuit comprises a control signal supplying circuit for supplying a pair of control signals of opposite phases to the respective gate electrodes of a pair of nMOS transistors of a selecting circuit. The control signal supplying circuit includes a control signal interrupting means which operates in synchronism with a clock signal so as to selectively interrupt the supply of the control signals to the signal selecting circuit while the clock signal is low level. The control signal interrupting means is provided with a discharging means for discharging high-level one of the gate electrodes of the nMOS transistors of the signal selecting circuit while the clock signal is low level. The discharging means comprises two nMOS transistors, each connected between the respective gate electrodes of the nMOS transistors of the signal selecting circuit and a grounding terminal.

Abstract: Associative keys and retrieve outputs corresponding thereto are registered to an associative memory in a vector data conversion apparatus. Conversion vector data stored in the main storage and comprising vector elements of the same type of an associative key is sequentially read out for each vector element and is inputted to a comparator, which then compares the vector element with the associative keys beforehand registered to the associative memory so as to determine whether or not a matching condition exists therebetween. When the comparator detects the matching condition, a retrieve output corresponding to the matched associative key is read out from the associative memory and is stored in the main storage. While the conversion vector data is sequentially read out for each vector in this manner, the retrieve output data is sequentially stored in the main storage so as to generate the converted vector data comprising the retrieve output data as vector elements.

Abstract: A vector to be processed consisting of a plurality of partial vectors each having a variable number of vector elements and a key vector consisting of a fixed number of vector elements are vector-processed while the vector elements of those vectors are sequentially read out. A vector processor has a punctuation detection circuit for detecting a punctuation between the partial vectors in the vector to be processed. The reading of the key vector is restored to the reading of the start vector element in accordance with the detection signal from the punctuation detection circuit.