Abstract: A method and a device that enable inactivation of a virus even if the nature and the like of the virus is unknown. The method for inactivating a virus involves preparing a laser that emits laser light having a specific wavelength, and irradiating a virus with the laser light to inactivate the virus.

Abstract: Current bidirectional broadcasting systems do not consider the reduced level of performance by performers when distributing a no-audience live performance. Provided is a bidirectional broadcasting method enabling an audience to enjoy a live performance distributed through a monitor, and characterized by comprising collecting reaction sound in real time from each audience member in response to a live distribution, outputting the real-time reaction sound from each audience member in response to the live distribution as an analog acoustic signal to speakers installed in a live event venue from which the live event is being distributed over a communication channel, and communicating, to a live performer in real time, the reactions of the audience members to the live distribution.

Abstract: This semiconductor device comprises: a bit line that is arranged in a memory cell region on a semiconductor substrate; and a gate electrode of a transistor for a peripheral circuit, which is arranged in a peripheral circuit region on the semiconductor substrate. The lateral surface of the gate electrode is provided with a plurality of side wall insulating films, while the lateral surface of the bit line is provided with a single side wall insulating film.

Abstract: In one embodiment, a semiconductor device includes a well region of a second conductivity type, a control electrode, a first main electrode and a second main electrode. The well region has a source region and a drain region of a first conductivity type selectively formed in a surface of the well region. The control electrode is configured to control a current path between the source region connected to the first main electrode and the drain region connected to the second main electrode. With respect to a reference defined as a position of the well region at an identical depth to a portion of the source region or the drain region with maximum curvature, a peak of impurity concentration distribution of the second conductivity type is in a range of 0.15 micrometers on a side of the surface of the well region and on a side opposite to the surface.

Abstract: In one embodiment, a semiconductor device includes a well region of a second conductivity type, a control electrode, a first main electrode and a second main electrode. The well region has a source region and a drain region of a first conductivity type selectively formed in a surface of the well region. The control electrode is configured to control a current path between the source region connected to the first main electrode and the drain region connected to the second main electrode. With respect to a reference defined as a position of the well region at an identical depth to a portion of the source region or the drain region with maximum curvature, a peak of impurity concentration distribution of the second conductivity type is in a range of 0.15 micrometers on a side of the surface of the well region and on a side opposite to the surface.

Abstract: A titanium ring for an electrodeposition drum has an attractive, uniform surface without patterns comprising bright and dark spots which are formed during surface polishing. The ring has a thickness of 4-30 mm and a surface hardness when it has been polished to an average surface roughness Ra of at most 0.3 .mu.m such that the difference between the maximum and minimum Vickers hardness measured with a load of at most 1 kg at 10 or more points disposed at a pitch of 0.3-1 mm along a line in an arbitrary direction along the surface is at most 10. The ring can be manufactured by welding of a rolled plate or by ring rolling of a tube. When the temperature of the material forming the ring is heated to at least its .beta. transformation point, cooling past the .beta. transformation point is carried out at a rate of at least 1000.degree. C. per hour. Subsequent working or heat treatment is carried out below the .beta. transformation point.

Abstract: This invention relates to a welding material for welding a high-Si austenite stainless steel, capable of ensuring a high corrosion resistance of the weld metal in hot nitric acid of high concentration, while maintaining a toughness of the weld metal not smaller than 2 Kg-m/cm.sup.2, and the method of application therefor. The welding material has a composition containing not greater than 0.015% of C, 5 to 7% of Si, not greater than 2% of Mn, 15 to 20% of Cr, 10 to 22% of Ni, not greater than 0.02% of N, not greater than 0.45% of one or both of Nb and Ta, and the balance substantially Fe and inevitable impurities the sum of C and N contents is selected to be not greater than 0.03% and the sum of Nb and Ta contents is selected to be not smaller than 15.times.(C+N)%. The Ni-balance value given by the following formula ranges between -4 and -2.Ni balance value=% Ni+30(%C+%N)+0.5(%Mn)-1.1(%Cr+1.5.times.%Si)+8.

Abstract: This invention relates to a welding material of ferrite-austenite two-phase stainless steel capable of producing a weld metal having a high resistance to corrosion, particularly in an environment containing nitric acid, and the method of application therefor. The welding material consists essentially of not more than 0.03% of C, not more than 2.0% of Si, not more than 2.0% of Mn, 25 to 30% of Cr, 7 to 12% of Ni, not more than 0.35% of N, and the balance Fe and inevitable impurities. The Ni balance value given by the following formula ranges between -11.7 and -6.7:Ni balance value=Ni%+0.5.times.Mn%+30.times.(C+N)%-1.1 (Cr%+1.5.times.Si%)+8.2.