Abstract: A vapor deposition mask includes a frame and a metal film supported by the frame, wherein the metal film includes a mask region arranged with a plurality of pixel opening parts corresponding to a display region of a display device, and an alignment region arranged in a periphery of the mask region, the alignment region includes a first opening part and a plurality of second opening parts arranged in a periphery of the first opening part, and a maximum width of the second opening part is smaller than a maximum width of the first opening part.

Abstract: Disclosed is a display device having a pixel including a pixel electrode, an electroluminescence layer over the pixel electrode, and an opposing electrode over the electroluminescence layer. The pixel electrode possesses: a first conductive layer including a conductive oxide containing indium and zinc; a second conductive layer over the first conductive layer, the second conductive layer containing silver; and a third conductive layer over the second conductive layer, the third conductive layer including a conductive oxide containing indium and tin. A thickness of the first conductive layer is equal to or more than twice a thickness of the third conductive layer and equal to or less than five times the thickness of the third conductive layer.

Abstract: A vapor deposition mask includes a frame and a metal film supported by the frame, wherein the metal film includes a mask region arranged with a plurality of pixel opening parts corresponding to a display region of a display device, and an alignment region arranged in a periphery of the mask region, the alignment region includes a first opening part and a plurality of second opening parts arranged in a periphery of the first opening part, and a maximum width of the second opening part is smaller than a maximum width of the first opening part.

Abstract: Disclosed is a display device having a pixel including a pixel electrode, an electroluminescence layer over the pixel electrode, and an opposing electrode over the electroluminescence layer. The pixel electrode possesses: a first conductive layer including a conductive oxide containing indium and zinc; a second conductive layer over the first conductive layer, the second conductive layer containing silver; and a third conductive layer over the second conductive layer, the third conductive layer including a conductive oxide containing indium and tin. A thickness of the first conductive layer is equal to or more than twice a thickness of the third conductive layer and equal to or less than five times the thickness of the third conductive layer.

Abstract: According to one embodiment, a display device includes an insulating substrate, a first transistor including a first semiconductor layer of silicon and a first electrode, a first insulating layer provided above the first semiconductor layer, a second transistor including a second semiconductor layer of an oxide semiconductor, a second electrode and a conductive layer electrically connected to the second semiconductor layer, and a second insulating layer provided above the first insulating layer and the second semiconductor layer, the first electrode being electrically connected to the first semiconductor layer in a first hole, and the second electrode being in contact with the conductive layer in a second hole.

Abstract: A display device includes: a base layer; pixel electrodes laminated on the base layer; a light emitting element layer laminated on the pixel electrodes; and a common electrode laminated on the light emitting element layer. Each of the pixel electrodes includes a first oxide conductive layer that is in direct contact with the base layer, a metal conductive layer that is in direct contact with the first oxide conductive layer, and a second oxide conductive layer that is in direct contact with the metal conductive layer. The base layer has an adhesion to the first oxide conductive layer that is higher than that of the metal conductive layer. The first oxide conductive layer includes a protrusion part that is extended farther than the metal conductive layer and the second oxide conductive layer in a direction, adjacent two of the pixel electrodes facing each other in the direction.

Abstract: A semiconductor device in an embodiment according to the present invention includes a first terminal and a second terminal stacked with a first conductive layer including titanium or molybdenum, a second conductive layer including aluminum above the first conductive layer, and a third conductive layer including titanium or molybdenum above the second conductive layer, a first insulation layer between the first terminal and the second terminal, a second insulation layer between the first insulation layer contacting a side wall part of the first terminal, and a fourth conducing layer extending an upper surface of the first terminal and an upper surface of the second insulation layer. The first terminal and the second terminal are arranged on an exterior side of a drive circuit including a semiconductor element.

Abstract: A display device includes: first and second drain electrodes; an organic insulating film; an inorganic insulating film formed on the organic insulating film; and first and second pixel electrodes formed on the inorganic insulating film. The organic insulating film includes an organic insulating film opening spanning the first drain electrode and the second drain electrode. The inorganic insulating film covering the organic insulating film includes first and second inorganic insulating film openings. The first pixel electrode is connected to the first drain electrode via the first inorganic insulating film opening. The second pixel electrode is connected to the second drain electrode via the second inorganic insulating film opening.

Abstract: According to one embodiment, a manufacturing method of thin film transistor includes forming an oxide semiconductor layer on a first insulating film, forming a first conductive layer formed of molybdenum or a molybdenum alloy on the oxide semiconductor layer, forming a second conductive layer on the first conductive layer, forming a resist mask on the second conductive layer, and forming a first conductive portion and a second conductive portion by performing dry etching of the second conductive layer using the resist mask.

Abstract: According to one embodiment, a display device includes an insulating substrate, a first transistor including a first semiconductor layer of silicon and a first electrode, a first insulating layer provided above the first semiconductor layer, a second transistor including a second semiconductor layer of an oxide semiconductor, a second electrode and a conductive layer electrically connected to the second semiconductor layer, and a second insulating layer provided above the first insulating layer and the second semiconductor layer, the first electrode being electrically connected to the first semiconductor layer in a first hole, and the second electrode being in contact with the conductive layer in a second hole.

Abstract: A display device a display region arranged with a plurality of pixels in a matrix shape, wherein each of the plurality of pixels includes a first electrode including a first conducting layer on the first conducting layer and comprised from Mo or a Mo alloy, a second conducting layer comprised from Ag or an Ag alloy, and a third conducting layer on the second conducting layer and comprised from a metal oxide having conducting properties, the first electrode being arranged corresponding to each of the pixels respectively, a light emitting layer above the third conducting layer and emitting light according to a current supply, and a second electrode above the light emitting layer and allowing at least a part of the light from the light emitting layer to pass through.

Abstract: A method of manufacturing a display device includes forming a three-layer laminate by laminating a first transparent conductive film, a metal film, and a second transparent conductive film in order from a substrate side. The three-layer laminate forms a plurality of anode electrodes arranged in a pixel region and a plurality of dummy electrodes arranged on an outer side of the pixel region. The method of manufacturing a display device also includes subjecting the second transparent conductive film and the metal film to etching and subjecting the first transparent conductive film to etching. A density of a pattern of the plurality of dummy electrodes is reduced as a distance from the pixel region is increased.

Abstract: There is provided an excellent contact between an electrode of a thin film transistor and a pixel electrode. A display device includes: an organic planarization film including a first contact hole opened on an electrode of a thin film transistor; an interlayer insulating film including a second contact hole opened on the electrode of the thin film transistor and on the organic planarization film; a base electrode that covers a portion where an end of the second contact hole overlaps a side wall of the first contact hole; and a pixel electrode contacted with the electrode of the thin film transistor.

Abstract: An organic EL display device includes in order from a substrate side: a metal layer; an insulating layer formed on the metal layer; a first electrode layer formed on the insulating layer; an organic layer formed on the first electrode layer; and a second electrode layer formed on the organic layer. The metal layer is for use as a reflective layer configured to reflect, on a surface of the metal layer, light generated from the organic layer by applying a voltage between the first electrode layer and the second electrode layer.

Abstract: According to one embodiment, a manufacturing method of thin film transistor includes forming an oxide semiconductor layer on a first insulating film, forming a first conductive layer formed of molybdenum or a molybdenum alloy on the oxide semiconductor layer, forming a second conductive layer on the first conductive layer, forming a resist mask on the second conductive layer, and forming a first conductive portion and a second conductive portion by performing dry etching of the second conductive layer using the resist mask.

Abstract: A display device includes: a base layer; pixel electrodes laminated on the base layer; a light emitting element layer laminated on the pixel electrodes; and a common electrode laminated on the light emitting element layer. Each of the pixel electrodes includes a first oxide conductive layer that is in direct contact with the base layer, a metal conductive layer that is in direct contact with the first oxide conductive layer, and a second oxide conductive layer that is in direct contact with the metal conductive layer. The base layer has an adhesion to the first oxide conductive layer that is higher than that of the metal conductive layer. The first oxide conductive layer includes a protrusion part that is extended farther than the metal conductive layer and the second oxide conductive layer in a direction, adjacent two of the pixel electrodes facing each other in the direction.

Abstract: A semiconductor device in an embodiment according to the present invention includes a first terminal and a second terminal stacked with a first conductive layer including titanium or molybdenum, a second conductive layer including aluminum above the first conductive layer, and a third conductive layer including titanium or molybdenum above the second conductive layer, a first insulation layer between the first terminal and the second terminal, a second insulation layer between the first insulation layer contacting a side wall part of the first terminal, and a fourth conducing layer extending an upper surface of the first terminal and an upper surface of the second insulation layer. The first terminal and the second terminal are arranged on an exterior side of a drive circuit including a semiconductor element.

Abstract: A display device a display region arranged with a plurality of pixels in a matrix shape, wherein each of the plurality of pixels includes a first electrode including a first conducting layer on the first conducting layer and comprised from Mo or a Mo alloy, a second conducting layer comprised from Ag or an Ag alloy, and a third conducting layer on the second conducting layer and comprised from a metal oxide having conducting properties, the first electrode being arranged corresponding to each of the pixels respectively, a light emitting layer above the third conducting layer and emitting light according to a current supply, and a second electrode above the light emitting layer and allowing at least a part of the light from the light emitting layer to pass through.

Abstract: A display device includes a display region arranged with a plurality of pixels in a matrix shape, a pixel electrode including at least a first conductive layer and a second conductive layer, an end part of the second conductive layer existing further to the exterior than an end part of the first conductive layer, a protective layer covering a region spreading further to the exterior than an end part of the first conductive layer of the second conductive layer so as to expose a part of a surface of the second conductive layer of a region stacked with the first conductive layer and the second conductive layer, and a bank layer covering an end part of the pixel electrode and an end part of the protective layer so as to expose a part of the second conductive layer.

Abstract: Since a film, which is the upper layer of an interlayer insulating film and has a fast etching rate, does not have dense film quality, moisture is entered from the end portion of a substrate, and it is likely that display unevenness and the like occur. A manufacturing method of a display device includes the steps of: forming a first contact hole on the first interlayer film; forming a second interlayer film on the first interlayer film and in the first contact hole, the second interlayer film having a lower layer film and an upper layer film having an etching rate faster than an etching rate of the lower layer film; forming a second contact hole on the second interlayer film; and removing at least a part of the upper layer film.