Patents by Inventor Noriyuki Aihara
Noriyuki Aihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10693036Abstract: A method for manufacturing a tunnel junction layer using organic vapor phase deposition, the method including: a first process that supplies a first material gas containing a group III element, a second material gas containing a group V element, and a third material gas containing a dopant of a first conductivity type, onto a compound semiconductor layer on which the tunnel junction layer is to be laminated; a second process that stops supplying the first material gas, the second material gas and the third material gas, and supplies a fourth material gas containing a dopant of a second conductivity type opposite to the first conductivity type; and a third process that continues to supply the fourth material gas, and further supplies a fifth material gas containing a group III element and a sixth material gas containing a group V element.Type: GrantFiled: May 2, 2019Date of Patent: June 23, 2020Assignee: SHOWA DENKO K. K.Inventors: Akira Uzawa, Noriyoshi Seo, Atsushi Matsumura, Noriyuki Aihara
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Patent number: 10439103Abstract: A light-emitting element layer 10 includes: an n-type contact layer 11; a first light-emitting layer 12; a tunnel junction layer 13; a second light-emitting layer 14; and a p-type contact layer 15 laminated in this order. The first light-emitting layer 12 and the second light-emitting layer 14 emit light of the same wavelength. The tunnel junction layer 13 includes: a p-type tunnel layer 131 made of AlGaAs containing p-type impurities (C); and an n-type tunnel layer 133 made of GaInP containing n-type impurities (Te). A highly n-type impurities-doped layer 132 having a higher concentration of n-type impurities than the n-type tunnel layer 133 is arranged between the p-type tunnel layer 131 and the n-type tunnel layer 133.Type: GrantFiled: May 17, 2018Date of Patent: October 8, 2019Assignee: SHOWA DENKO K. K.Inventors: Akira Uzawa, Noriyoshi Seo, Atsushi Matsumura, Noriyuki Aihara
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Publication number: 20190259908Abstract: A light-emitting element layer (10) includes: an n-type contact layer (11); a first light-emitting layer (12); a tunnel junction layer (13); a second light-emitting layer (14); and a p-type contact layer (15) laminated in this order. The first light-emitting layer (12) and the second light-emitting layer (14) emit light of the same wavelength. The tunnel junction layer (13) includes: a p-type tunnel layer (131) made of AlGaAs containing p-type impurities (C); and an n-type tunnel layer (133) made of GaInP containing n-type impurities (Te). A highly n-type impurities-doped layer (132) having a higher concentration of n-type impurities than the n-type tunnel layer (133) is arranged between the p-type tunnel layer (131) and the n-type tunnel layer (133).Type: ApplicationFiled: May 2, 2019Publication date: August 22, 2019Applicant: SHOWA DENKO K. K.Inventors: Akira UZAWA, Noriyoshi Seo, Atsushi Matsumura, Noriyuki Aihara
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Publication number: 20180342646Abstract: A light-emitting element layer 10 includes: an n-type contact layer 11; a first light-emitting layer 12; a tunnel junction layer 13; a second light-emitting layer 14; and a p-type contact layer 15 laminated in this order. The first light-emitting layer 12 and the second light-emitting layer 14 emit light of the same wavelength. The tunnel junction layer 13 includes: a p-type tunnel layer 131 made of AlGaAs containing p-type impurities (C); and an n-type tunnel layer 133 made of GaInP containing n-type impurities (Te). A highly n-type impurities-doped layer 132 having a higher concentration of n-type impurities than the n-type tunnel layer 133 is arranged between the p-type tunnel layer 131 and the n-type tunnel layer 133.Type: ApplicationFiled: May 17, 2018Publication date: November 29, 2018Applicant: SHOWA DENKO K. K.Inventors: Akira UZAWA, Noriyoshi SEO, Atsushi MATSUMURA, Noriyuki AIHARA
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Patent number: 9318656Abstract: A light-emitting diode and manufacturing method, including a flat portion and a mesa structure. An inclined side surface is formed by wet etching such that a cross-sectional area of the mesa structure is continuously reduced toward a top surface. A protective film covers the flat portion, the inclined side surface, and a peripheral region of the top surface of the mesa structure. The protective film includes an electrical conduction window arranged around a light emission hole and from which a compound semiconductor layer is exposed. A continuous electrode film contacts the exposed compound semiconductor layer, covers the protective film formed on the flat portion, and has the light emission hole on the top surface. A transparent conductive film is formed between a reflecting layer and the layer at a position that corresponds to the electrical conduction window and in a range surrounded by the electrical conduction window.Type: GrantFiled: December 13, 2012Date of Patent: April 19, 2016Assignee: SHOWA DENKO K.K.Inventor: Noriyuki Aihara
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Patent number: 9299885Abstract: The invention provides a light-emitting diode, a light-emitting diode lamp, and an illumination device which emit infrared light with both high-speed response and high output performance. The invention relates to a light-emitting diode including a light-emitting portion which has an active layer of a quantum well structure, in which a well layer made of a compound semiconductor having a composition formula (InX1Ga1-X1)As (0?X1?1) and a barrier layer made of a compound semiconductor having a composition formula (AlX2Ga1-X2)As (0?X2?1) are alternately laminated, and a first clad layer and a second clad layer sandwiching the active layer, an electric current diffusion layer which is formed on the light-emitting portion, and a functional substrate which is bonded to the electric current diffusion layer, a light-emitting diode lamp, and an illumination device.Type: GrantFiled: November 30, 2011Date of Patent: March 29, 2016Assignee: SHOWA DENKO K.K.Inventor: Noriyuki Aihara
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Patent number: 9166110Abstract: A light-emitting diode and method of manufacturing the same, including a flat portion and a mesa structure including an inclined side surface formed by wet etching and a top surface. A protective film and an electrode film sequentially cover a part of the flat portion and at least a part of the mesa structure, the protective film including an electrical conduction window arranged around a light emission hole and from which a compound semiconductor layer is exposed. The electrode film is a continuous film that contacts the surface of the exposed compound semiconductor layer, covers a portion of the protective film formed on the flat portion, and has the light emission hole on the top surface. A transparent film is formed between a reflecting layer and a compound semiconductor layer. A through-electrode is provided in a range of the transparent film which overlaps the light emission hole.Type: GrantFiled: December 18, 2012Date of Patent: October 20, 2015Assignee: SHOWA DENKO K.K.Inventor: Noriyuki Aihara
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Patent number: 9112084Abstract: Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlX1Ga1-X1)As (0?X1?1) and a barrier layer which comprises a composition expressed by the composition formula of (AlX2Ga1-X2)As (0<X2?1), and a first clad layer and a second clad layer, between both of which the active layer is sandwiched, wherein the first clad layer and the second clad layer comprise a composition expressed by the composition formula of (AlX3Ga1-X3)Y1In1-Y1P (0?X3?1, 0<Y1?1); a current diffusion layer formed on the light-emitting section; and a functional substrate bonded to the current diffusion layer.Type: GrantFiled: January 10, 2014Date of Patent: August 18, 2015Assignee: SHOWA DENKO K.K.Inventors: Noriyuki Aihara, Noriyoshi Seo, Noritaka Muraki, Ryouichi Takeuchi
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Publication number: 20150034900Abstract: A light-emitting diode and manufacturing method, including a flat portion and a mesa structure. An inclined side surface is formed by wet etching such that a cross-sectional area of the mesa structure is continuously reduced toward a top surface. A protective film covers the flat portion, the inclined side surface, and a peripheral region of the top surface of the mesa structure. The protective film includes an electrical conduction window arranged around a light emission hole and from which a compound semiconductor layer is exposed. A continuous electrode film contacts the exposed compound semiconductor layer, covers the protective film formed on the flat portion, and has the light emission hole on the top surface. A transparent conductive film is formed between a reflecting layer and the layer at a position that corresponds to the electrical conduction window and in a range surrounded by the electrical conduction window.Type: ApplicationFiled: December 13, 2012Publication date: February 5, 2015Applicant: SHOWA DENKO K.K.Inventor: Noriyuki Aihara
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Publication number: 20140291612Abstract: A light-emitting diode and method of manufacturing the same, including a flat portion and a mesa structure including an inclined side surface formed by wet etching and a top surface. A protective film and an electrode film sequentially cover a part of the flat portion and at least a part of the mesa structure, the protective film including an electrical conduction window arranged around a light emission hole and from which a compound semiconductor layer is exposed. The electrode film is a continuous film that contacts the surface of the exposed compound semiconductor layer, covers a portion of the protective film formed on the flat portion, and has the light emission hole on the top surface. A transparent film is formed between a reflecting layer and a compound semiconductor layer. A through-electrode is provided in a range of the transparent film which overlaps the light emission hole.Type: ApplicationFiled: December 18, 2012Publication date: October 2, 2014Applicant: SHOWA DENKO K.K.Inventor: Noriyuki AIHARA
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Patent number: 8754398Abstract: A light-emitting diode, including a light emitting section including an active layer having a quantum well structure in which well layers having the composition: (InX1Ga1-X1)As (0?X1?1) and barrier layers having the composition: (AlX2Ga1-X2)As (0?X2?1) are alternately laminated, first guide and second guide layers paired to sandwich the active layer and having the composition: (AlX3Ga1-X3)As (0?X3?1), and first cladding and second cladding layers paired to sandwich the active layer via the first guide layer and the second guide layer, respectively; a current diffusion layer formed on the light emitting section; and a functional substrate bonded to the current diffusion layer; wherein the first cladding layer and the second cladding layer have the composition: (AlX4Ga1-X4)YIn1-YP (0?X4?1, 0<Y?1); and a light-emitting diode lamp and a lighting device using the same.Type: GrantFiled: January 20, 2011Date of Patent: June 17, 2014Assignee: Showa Denko K.K.Inventors: Noriyuki Aihara, Noriyoshi Seo, Noritaka Muraki
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Publication number: 20140124733Abstract: Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlX1Ga1-X1) As (0?X1?1) and a barrier layer which comprises a composition expressed by the composition formula of (AlX2Ga1-X2)As (0<X2?1), and a first clad layer and a second clad layer, between both of which the active layer is sandwiched, wherein the first clad layer and the second clad layer comprise a composition expressed by the composition formula of (AlX3Ga1-X3)Y1In1-Y1P (0?X3?1, 0<Y1?1); a current diffusion layer formed on the light-emitting section; and a functional substrate bonded to the current diffusion layer.Type: ApplicationFiled: January 10, 2014Publication date: May 8, 2014Applicant: SHOWA DENKO K.K.Inventors: Noriyuki AIHARA, Noriyoshi SEO, Noritaka MURAKI, Ryouichi TAKEUCHI
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Patent number: 8659004Abstract: Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlX1 Ga1-X1) As (0?X1?1) and a barrier layer which comprises a composition expressed by the composition formula of (AlX2 Ga1-X2) As (0<2?1), and a first clad layer and a second clad layer, between both of which the active layer is sandwiched, wherein the first clad layer and the second clad layer comprise a composition expressed by the composition formula of (AlX3Ga1-X)Y1 In1-Y1 P (0?X3?1, 0<Y1?1); a current diffusion layer formed on the light-emitting section; and a functional substrate bonded to the current diffusion layer.Type: GrantFiled: September 15, 2010Date of Patent: February 25, 2014Assignee: Showa Denko K.K.Inventors: Noriyuki Aihara, Noriyoshi Seo, Noritaka Muraki, Ryouichi Takeuchi
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Publication number: 20130248819Abstract: The invention provides a light-emitting diode, a light-emitting diode lamp, and an illumination device which emit infrared light with both high-speed response and high output performance. The invention relates to a light-emitting diode including a light-emitting portion which has an active layer of a quantum well structure, in which a well layer made of a compound semiconductor having a composition formula (InX1Ga1-X1)As (0?X1?1) and a barrier layer made of a compound semiconductor having a composition formula (AlX2Ga1-X2)As (0?X2?1) are alternately laminated, and a first clad layer and a second clad layer sandwiching the active layer, an electric current diffusion layer which is formed on the light-emitting portion, and a functional substrate which is bonded to the electric current diffusion layer, a light-emitting diode lamp, and an illumination device.Type: ApplicationFiled: November 30, 2011Publication date: September 26, 2013Applicant: SHOWA DENKO K.K.Inventor: Noriyuki Aihara
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Publication number: 20130134390Abstract: A light-emitting diode of the present invention includes a light-emitting unit, containing an active layer having a quantum well structure prepared by alternately stacking a well layer and a barrier layer each formed from a compound semiconductor having a composition formula of (AlX1Ga1-X1)As (wherein 0?X1?1), and a first cladding layer and a second cladding layer that sandwich the active layer, a current diffusion layer formed on the light-emitting unit, and a functional substrate bonded to the current diffusion layer, wherein the first cladding layer and the second cladding layer are formed from a compound semiconductor having a composition formula of (AlX2Ga1-X2)Y1In1-Y1P (wherein 0?X2?1 and 0?Y1?1), and the number of pairs of the well layer and the barrier layer is not more than five.Type: ApplicationFiled: August 10, 2011Publication date: May 30, 2013Applicant: SHOWA DENKO K.K.Inventor: Noriyuki Aihara
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Publication number: 20120305890Abstract: A light-emitting diode, including a light emitting section including an active layer having a quantum well structure in which well layers having the composition: (InX1Ga1-X1)As (0?X1?1) and barrier layers having the composition: (AlX2Ga1-X2)As (0?X2?1) are alternately laminated, first guide and second guide layers paired to sandwich the active layer and having the composition: (AlX3Ga1-X3)As (0?X3?1), and first cladding and second cladding layers paired to sandwich the active layer via the first guide layer and the second guide layer, respectively; a current diffusion layer formed on the light emitting section; and a functional substrate bonded to the current diffusion layer; wherein the first cladding layer and the second cladding layer have the composition: (AlX4Ga1-X4)YIn1-YP (0?X4?1, 0<Y?1); and a light-emitting diode lamp and a lighting device using the same.Type: ApplicationFiled: January 20, 2011Publication date: December 6, 2012Applicant: SHOWA DENKO K.K.Inventors: Noriyuki Aihara, Noriyoshi Seo, Noritaka Muraki
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Publication number: 20120168717Abstract: Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (AlX1Ga1-X1)As (0?X1?1) and a barrier layer which comprises a composition expressed by the composition formula of (AlX2Ga1-X2)As (0<X2?1), and a first clad layer and a second clad layer, between both of which the active layer is sandwiched, wherein the first clad layer and the second clad layer comprise a composition expressed by the composition formula of (AlX3Ga1-X3)Y1In1-Y1P (0?X3?1, 0<Y1?1); a current diffusion layer formed on the light-emitting section; and a functional substrate bonded to the current diffusion layer.Type: ApplicationFiled: September 15, 2010Publication date: July 5, 2012Applicant: SHOWA DENKO K.K.Inventors: Noriyuki Aihara, Noriyoshi Seo, Noritaka Muraki, Ryouichi Takeuchi
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Publication number: 20120168782Abstract: Disclosed is a light-emitting diode, which has an infrared emission wavelength of 700 nm or more, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section (7), which includes an activity layer, wherein the activity layer emits infrared light and includes a multilayer including a well layer (12) which is made from a composition expressed by the composition formula of (AlXGa1-X) As (0?x?1) and a barrier layer (13); a current diffusion layer (8) formed on the light-emitting section (7); and a functional substrate (3) bonded to the current diffusion layer (8).Type: ApplicationFiled: September 13, 2010Publication date: July 5, 2012Applicant: SHOWA DENKO K.K.Inventors: Noriyuki Aihara, Ryouichi Takeuchi, Noritaka Muraki