Abstract: A method to measure the height-direction position of a mask M in an exposure device having a function to irradiate the mask M with light emitted from a light source and transfer a pattern formed on the mask M onto a photosensitive substrate such as a wafer by a projection optical system, a mask surface height-direction position measurement method characterized by moving, before measuring the height-direction position of the mask M, an exposure area defining member 1 which is installed between the mask M and the projection optical system and defines an exposure area at the time of exposure.

Abstract: Exposure apparatus are disclosed that can control, to high precision, exposure doses on a photosensitive substrate of a mask pattern defined on a reflective mask as the pattern is being exposed on the substrate using a projection-optical system. An exemplary apparatus includes a first illumination sensor for detecting light that is incident on a reflective mask from an illumination system and a second illumination sensor for detecting light that has propagated from the illumination system to a reference reflective surface on the reflective mask, reflected from the reference reflective surface, and arrived at an image surface of the projection-optical system. Calibration of the first sensor is performed based on detection data obtained by the first sensor and detection data obtained by the second sensor. Exposure of the substrate is controlled based on the detection data obtained by the calibrated first sensor.

Abstract: An exposure apparatus transfers a pattern from a mask onto a sensitive substrate. A film protects the mask, and a film frame, between the mask and the film, holds the film spaced away from a surface of the mask. The film has a first transmittance for radiation of a necessary wavelength and has a second transmittance for radiation of an unnecessary wavelength; the first transmittance is higher than the second transmittance. The film might reflect or absorb the unnecessary wavelength. The necessary wavelength may be an exposure wavelength and may also be in the range of extreme ultra violet radiation. An atmosphere around the mask transitions from an air atmosphere to a reduced-pressure atmosphere, or from a reduced-pressure atmosphere to an air atmosphere, at a speed that allows a difference between a pressure applied to one surface of the film and a pressure applied to the other surface of the film to be held at a predetermined value or smaller.

Abstract: A substrate conveyor apparatus carries a substrate on which patterns are formed, carries the substrate in a state protected by a protective cover when the substrate is not used, and carries a cover protection means that covers the inner surface of the protective cover when the substrate is used. The substrate conveyor apparatus has a grounding means that grounds the substrate or the protective cover.

Abstract: With respect to a substrate conveyor apparatus that, being a substrate conveyor apparatus that carries substrate on which patterns are formed, carries the substrate in a state protected by a protective cover when the substrate is not used, a substrate conveyor apparatus having a cover protection means that covers the inner surface of the protective cover when the substrate is used.

Abstract: A method to measure the height-direction position of a mask M in an exposure device having a function to irradiate the mask M with light emitted from a light source and transfer a pattern formed on the mask M onto a photosensitive substrate such as a wafer by a projection optical system, a mask surface height-direction position measurement method characterized by moving, before measuring the height-direction position of the mask M, an exposure area defining member 1 which is installed between the mask M and the projection optical system and defines an exposure area at the time of exposure.

Abstract: A method to measure the height-direction position of a mask M in an exposure device having a function to irradiate the mask M with light emitted from a light source and transfer a pattern formed on the mask M onto a photosensitive substrate such as a wafer by a projection optical system, a mask surface height-direction position measurement method characterized by moving, before measuring the height-direction position of the mask M, an exposure area defining member 1 which is arranged between the mask M and the projection optical system and defines an exposure area at the time of exposure.

Abstract: An exposure apparatus is configured so that a wafer carrier robot can deliver a wafer to a wafer holder held by a holder carrier robot or can carry out a wafer from the wafer holder held by the holder carrier robot, under a reduced-pressure environment. According to the apparatus, even if it takes a relatively long time to replace the wafer on the wafer holder used inside the reduced pressure space, by performing the wafer exchange operation and a predetermined operation (the exposure apparatus main section operation) using the stage on which the wafer holder holding the wafer is mounted concurrently, the influence that the wafer exchange time has on the throughput can be suppressed.

Abstract: Reticle-holding members are disclosed that prevent a reticle from falling from the reticle stage of an exposure device, even in event of a power failure, and that maintain flatness of the reticle surface on which the pattern is formed. In an exemplary configuration a reticle-holding member is configured to hold a reticle and is configured so that at least part of its edge portion projects beyond the reticle. The projecting edge portion is supported and mounted on the reticle stage of the exposure system.

Abstract: An exposure apparatus transfers a pattern from a mask onto a sensitive substrate. A film protects the mask, and a film frame, between the mask and the film, holds the film spaced away from a surface of the mask. The film has a first transmittance for radiation of a necessary wavelength and has a second transmittance for radiation of an unnecessary wavelength; the first transmittance is higher than the second transmittance. The film might reflect or absorb the unnecessary wavelength. The necessary wavelength may be an exposure wavelength and may also be in the range of extreme ultra violet radiation. An atmosphere around the mask transitions from an air atmosphere to a reduced-pressure atmosphere, or from a reduced-pressure atmosphere to an air atmosphere, at a speed that allows a difference between a pressure applied to one surface of the film and a pressure applied to the other surface of the film to be held at a predetermined value or smaller.

Abstract: Exposure apparatus are disclosed that can control, to high precision, exposure doses on a photosensitive substrate of a mask pattern defined on a reflective mask as the pattern is being exposed on the substrate using a projection-optical system. An exemplary apparatus includes a first illumination sensor for detecting light that is incident on a reflective mask from an illumination system and a second illumination sensor for detecting light that has propagated from the illumination system to a reference reflective surface on the reflective mask, reflected from the reference reflective surface, and arrived at an image surface of the projection-optical system. Calibration of the first sensor is performed based on detection data obtained by the first sensor and detection data obtained by the second sensor. Exposure of the substrate is controlled based on the detection data obtained by the calibrated first sensor.

Abstract: A method to measure the height-direction position of a mask M in an exposure device having a function to irradiate the mask M with light emitted from a light source and transfer a pattern formed on the mask M onto a photosensitive substrate such as a wafer by a projection optical system, a mask surface height-direction position measurement method characterized by moving, before measuring the height-direction position of the mask M, an exposure area defining member 1 which is arranged between the mask M and the projection optical system and defines an exposure area at the time of exposure.

Abstract: With respect to a substrate conveyor apparatus that, being a substrate conveyor apparatus that carries substrates on which patterns are formed, carries the substrates in a state protected by a protective cover when the substrate is not used, a substrate conveyor apparatus having a cover protection means that conceals the inner surface of the protective cover when the substrate is used.

Abstract: Methods and apparatus for alignment of masks and wafers in charged-particle-beam (CPB) pattern-transfer use optical position sensors to determine the positions of a mask or a mask stage with respect to an axis of a CPB optical system. The optical position sensor uses optical reference marks provided on the mask or mask stage. Determination of the position of the mask of the mask stage permits a coarse alignment of the mask or the mask stage. CPB reference marks are provided on masks, mask stages, wafers, and wafer stages, permitting alignment of the mask stage or the mask with respect to the wafer stage or wafer, respectively, using the charged particle beam. The charged particle beam is scanned with respect to the wafer or wafer-stage CPB reference marks to determine a deflection corresponding to an alignment of the CPB reference marks of the mask and wafer (or mask stage and wafer stage). Use of the charged particle beam for such alignment permits a fine alignment.

Abstract: Reticles and apparatus for performing charged-particle-beam microlithography, and associated methods, are disclosed, in which the pattern to be transferred to a sensitive substrate is divided according to any of various schemes serving to improve throughput and pattern-transfer accuracy. The methods and apparatus are especially useful whenever a divided stencil reticle is used that includes complementary pattern portions.

Abstract: For use in association with microlithography systems, reticle chambers and reticle cassettes are disclosed that provide ready access to and exchange of reticles for exposure as well as temperature control of the reticles. In an embodiment a vacuum reticle library is provided in a reticle-storage chamber. The vacuum reticle library includes a rack comprising multiple shelves for holding respective reticles at different respective elevations. One or more shelves comprises a fluid conduit through which is circulated a temperature-controlled fluid. By adjusting and controlling the temperature of the fluid (e.g., water) circulated to each shelf, the temperature of the respective reticles held on the shelves can be controlled and adjusted quickly. Similarly, an atmospheric-pressure reticle library can be provided in an atmospheric-pressure chamber containing a rack of multiple shelves on which respective reticle cassettes (containing reticles) can be stored.

Abstract: Methods and devices are provided that achieve accurate detection of the positions of alignment marks on wafer substrates and other specimens as used in charged-particle-beam (CPB) microlithography. A charged particle beam (e.g., electron beam) is irradiated onto an area, of a specimen, lacking an alignment mark to obtain a first backscattered-particle signal regarded as “background.” The beam is irradiated onto an area, of the specimen, where an alignment mark is present to obtain a second backscattered-particle signal. The difference of the first signal from the second signal is determined to produce a difference signal containing data concerning only aspects of the alignment mark and not of the background. The methods are especially useful whenever the specimen has crystalline properties that otherwise could affect the backscattered-particle signal.

Abstract: Microlithography methods and apparatus are disclosed that allow reticle deformations to be measured and corrected quickly and accurately. Multiple alignment marks (comprising a “first set” and “second set” of reticle-position-measurement marks) are formed on the reticle. A first set of reticle-deformation data is obtained by detecting the positions of at least some of the first set of reticle-position-measurement marks using an inspection device that is separate from the microlithography apparatus with which the reticle will be used for making lithographic exposures. The first set of reticle-deformation data is stored in a first memory. The reticle then is mounted in the microlithography apparatus, in which a second set of reticle-deformation data is obtained by detecting the positions of at least some of the second set of reticle-position-measurement marks. The second set of reticle-deformation data is stored in a second memory.

Abstract: Microlithography reticles are disclosed that include a high-contrast reticle-identification code (bar code). The bar code is configured as a pattern (usually linearly arrayed) of high-scattering regions (bar-code elements) each exhibiting a relatively high degree of reflection-scattering of irradiated probe light. The high-scattering regions are separated from one another by respective low-scattering regions each exhibiting a relatively low degree of reflection-scattering of incident probe light. For example, the low-scattering regions have smooth surfaces from which very little probe light is reflection-scattered, wherein each high-scattering region includes multiple scattering features such as line, channels, projections, or the like that provide multiple edges and/or points that reflection-scatter probe light.

Abstract: Alignment-mark patterns are disclosed that are defined on stencil reticles and that can be transferred lithographically from the reticle to a sensitized substrate using charged-particle-beam microlithography. The corresponding alignment marks as transferred to the substrate are detectable at high accuracy using an optical-based alignment-detection device (e.g., an FIA-based device). The transferred alignment marks can be used in place of alignment marks used in optical microlithography systems. An alignment-mark pattern as defined on a stencil reticle includes pattern elements that are split in any of various ways into respective pattern-element portions separated from each other on the membrane of the stencil reticle by “girders” (band-like membrane portions) that prevent the formation of islands in the stencil reticle and that prevent deformation of the pattern elements on the stencil reticle.